© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 6
1Publication Order Number:
BAV99WT1/D
BAV99WT1G,
SBAV99WT1G,
BAV99RWT1G,
SBAV99RWT1G
Dual Series Switching
Diodes
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Features
These Devices are PbFree and are RoHS Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ100 Qualified and
PPAP Capable
Suggested Applications
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage VR70 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 70 V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
IF(AV) 715 mA
Repetitive Peak Forward Current IFRM 450 mA
NonRepetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM 2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
Device Package Shipping
ORDERING INFORMATION
BAV99RWT1
SC70, CASE 419, STYLE 10
BAV99WT1
SC70, CASE 419, STYLE 9
3
CATHODE/ANODE
ANODE
1
CATHODE
2
12
3
CATHODE/ANODE
CATHODE ANODE
MARKING DIAGRAM
SC70
CASE 419
BAV99RWT1G SC70
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99WT1G SC70
(PbFree)
3,000 / Tape & Reel
http://onsemi.com
SBAV99WT1G SC70
(PbFree)
3,000 / Tape & Reel
SBAV99RWT1G SC70
(PbFree)
3,000 / Tape & Reel
X7 MG
G
A7 = BAV99WT1
F7 = BAV99RWT1
M = Date Code
G= PbFree Package
1
BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board, (Note 1) TA = 25°C
Derate above 25°C
PD200
1.6
mW
mW/°C
Thermal Resistance JunctiontoAmbient RqJA 625 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR) 70
Vdc
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
2.5
30
50
mAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
1.5
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mVdc
Reverse Recovery Time
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W
trr
6.0
ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
1.75
V
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
+10 V 2 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G
http://onsemi.com
3
CURVES APPLICABLE TO EACH DIODE
IR, REVERSE CURRENT (A)μ
1000
0.0 0.2
VF, FORWARD VOLTAGE (VOLTS)
0.4 0.6 0.8 1.2
10
1.0
0.1
TA = 150°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
TA = 25°CTA = -55°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
100
1.0
BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
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Phone: 81358171050
BAV99WT1/D
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