BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G Dual Series Switching Diodes http://onsemi.com The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features SC-70 CASE 419 * These Devices are Pb-Free and are RoHS Compliant * S Prefix for Automotive and Other Applications Requiring Unique ANODE 1 Site and Control Change Requirements; AEC-Q100 Qualified and PPAP Capable Suggested Applications * * * * * CATHODE 2 3 CATHODE/ANODE ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic BAV99WT1 SC-70, CASE 419, STYLE 9 CATHODE 1 ANODE 2 3 CATHODE/ANODE BAV99RWT1 SC-70, CASE 419, STYLE 10 MAXIMUM RATINGS (Each Diode) Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Rating Peak Forward Surge Current MARKING DIAGRAM X7 MG G 1 A7 F7 M G = BAV99WT1 = BAV99RWT1 = Date Code = Pb-Free Package ORDERING INFORMATION A 2.0 1.0 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. Package Shipping BAV99WT1G SC-70 (Pb-Free) 3,000 / Tape & Reel SBAV99WT1G SC-70 (Pb-Free) 3,000 / Tape & Reel BAV99RWT1G SC-70 (Pb-Free) 3,000 / Tape & Reel SBAV99RWT1G SC-70 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2012 June, 2012 - Rev. 6 1 Publication Order Number: BAV99WT1/D BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 200 1.6 mW mW/C RqJA 625 C/W PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -65 to +150 C Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) Symbol Characteristic Min Max 70 - - - - 2.5 30 50 - 1.5 - - - - 715 855 1000 1250 - 6.0 - 1.75 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) V(BR) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W trr Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR Vdc mAdc pF mVdc ns V 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 W +10 V 2k 100 mH 0.1 mF IF tr 0.1 mF tp t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 90% 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: (c) tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G CURVES APPLICABLE TO EACH DIODE 1000 10 I R, REVERSE CURRENT (A) 100 10 TA = 150C TA = 25C 1.0 TA = -55C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.1 0.0 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 0.001 1.2 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 DIM A A1 A2 b c D E e e1 L HE E HE 1 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE L A1 MIN 0.80 0.00 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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