MBRS140LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 40 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13 Reel, Add "T3" Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: B14L SMB CASE 403A PLASTIC MARKING DIAGRAM B14L MAXIMUM RATINGS Rating B14L = Device Code Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 110C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 1 ORDERING INFORMATION Device Package Shipping MBRS140LT3 SMB 2500/Tape & Reel Publication Order Number: MBRS140LT3/D MBRS140LT3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJL RJA 24 80 C/W Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 2.) ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3 3.)) see Figure 2 (iF = 1.0 A) (iF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3 3.)) see Figure 4 (VR = 40 V) (VR = 20 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 2 TJ = 25C TJ = 125C 0.5 0.6 0.425 0.58 TJ = 25C TJ = 100C 0.4 0.02 10 5.0 Volts mA MBRS140LT3 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 1.0 TJ = 125C 25C 100C 0.1 -40C 0.3 0.1 0.5 0.9 0.7 25C 0.1 0.3 0.1 0.5 0.9 0.7 Figure 2. Maximum Forward Voltage 100E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) 100C Figure 1. Typical Forward Voltage TJ = 125C 100C 1.0E-3 TJ = 125C 10E-3 100C 1.0E-3 25C 100E-6 100E-6 10E-6 25C 0 10 20 30 40 1.0E-6 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 1.6 dc 1.4 1.2 FREQ = 20 kHz SQUARE WAVE 1.0 Ipk/Io = 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 25 10E-6 PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) TJ = 125C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E-3 0 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 1.0E-6 100 45 65 85 105 125 0.9 0.8 SQUARE WAVE 0.7 Ipk/Io = 0.6 Ipk/Io = 5.0 0.5 Ipk/Io = 10 0.4 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBRS140LT3 TJ , DERATED OPERATING TEMPERATURE ( C) 1000 C, CAPACITANCE (pF) TJ = 25C 100 0 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 1.0E+00 5.0 15 20 25 30 35 40 24C/W 115 44C/W 63C/W 105 80C/W Rtja = 94C/W 95 85 75 65 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 50% 1.0E-01 20% 10% 5.0% 2.0% 1.0E-02 1.0% 1.0E-03 1.0E-04 10 125 Rtjl(t) = Rtjl*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (s) 1.0E+00 1.0E-01 1.0E-02 Figure 9. Thermal Response -- Junction to Lead 50% 20% 10% 5.0% 2.0% 1.0% 1.0E-03 1.0E-04 Rtjl(t) = Rtjl*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 10. Thermal Response -- Junction to Ambient http://onsemi.com 4 MBRS140LT3 MINIMUM SOLDER PAD SIZES 0.089 2.261 inches 0.108 2.743 mm 0.085 2.159 http://onsemi.com 5 MBRS140LT3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A-03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J H http://onsemi.com 6 INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 MBRS140LT3 Notes http://onsemi.com 7 MBRS140LT3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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