SENSITRON
SEMICONDUCTOR
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Technical Data
Data Sheet 2803, Rev. B MBR2050/2060CT MBRB2050/2060CT
MBR2050/2060CT-1 SCHOTTKY RECTIFIER
Applications:
•
Switching power supply
•
Converters
•
Free-Wheeling diodes
•
Reverse battery protection
Features:
• 150 TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR2050CT
MBR2060CT
TO-220
MBRB2050CT
MBRB2060CT
D2PAK
MBR2050CT-1
MBR2060CT-1
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
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SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Data Sheet 2803, Rev. B
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Data Sheet 2803, Rev. B
Maximum Ratings:
Characteristics Symbol Condition Max. Units
50 MBR2050CT
MBRB2050CT-1
MBR2050CT-1
Peak Inverse Voltage VRWM -
60 MBR2060CT
MBRB2060CT-1
MBR2060CT-1
V
Max. Average Forward IF(AV) 50% duty cycle @TC =135°C,
rectangular wave form 20 A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg)* VF1 @ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C 0.80
0.95 V
V
F2 @ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125 °C 0.70
0.85 V
Max. Reverse Current (per
leg)* IR1 @VR = rated VR
TJ = 25 °C 0.15 mA
I
R2 @VR = rated VR
TJ = 125 °C 150.0 mA
Max. Junction Capacitance
(per leg) CT@VR = 5V, TC = 25 °C
fSIG = 1MHz 400 pF
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ- -55 to +175 °C
Max. Storage Temperature Tstg - -55 to +175 °C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC DC operation 2.0 °C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC DC operation 1.0 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS Mounting surface,
smooth and greased
(only for TO-220)
0.50 °C/W
Approximate Weight wt - 2 g
Mounting Torque TM- 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262(Suffix”-1” for TO-262,”MBRB x” for D2PAK)
Data Sheet 2921, Rev. –
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Data Sheet 2803, Rev. B
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage Drop - V
F (V)
100
101
Instantaneous Forward Current - IF (A)
Typical Forward Characteristics
125 °C
175 °C
25 °C
0 10 20 30 40 50 60
Reverse Voltage - VR (V)
10-3
10-2
10-1
100
101
102
Instantaneous Reverse Current - IR (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
175 °C
0 10 20 30 40 50 60
Reverse Voltage - VR (V)
100
150
200
250
300
350
400
Junction Capacitance - CT (pF)
Typical Junction Capacitance
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
SENSITRON
SEMICONDUCTOR
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MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Data Sheet 2803, Rev. B
