3
Motorola Bipolar Power Transistor Device Data
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01 0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1.0 2.0 5.0 10 20 50 100 200 500
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 0.83
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1 0.50.2
RESISTANCE (NORMALIZED)
1000
0.5
0.3
0.07
0.03
0.01 0.03 3.0 30 3000.3
0.2
0.1
0.05
0.02
0.01
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 ms
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
1.0 ms
5.0 ms
0.1 ms
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
30
2.0
IC, COLLECTOR CURRENT (AMPS)
3.0 10
10
0.5
0.2
5.0
20
1.0
20 100
0
TC = 25
°
C SINGLE PULSE
5.0 50 25015030
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
30
140
IC, COLLECTOR CURRENT (AMPS)
60 180100
10
20
260220
0
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
L = 200
µ
H
IC/IB1
≥
50
TC = 100
°
C
VBE(off) = 0–5.0 V
RBE = 47
Ω
DUTY CYCLE = 10%
0
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 5 gives RBSOA characteristics.