TIP31, TIP32
High Power Bipolar Transistors
Page <2> 15/12/11 V1.1
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Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC= 30 mA, IB= 0) TIP31A, TIP32A
TIP31C, TIP32C
VCEO (SUS) 60
100
- V
Collector cut off current
(VCE = 30V, IB= 0) TIP31A, TIP32A
(VCE = 60V, IB= 0) TIP31C, TIP32C
ICEO - 0.3
mA
Collector cut off current
(VCE = 60 V, VEB = 0) TIP31A, TIP32A
(VCE = 100 V, VEB = 0) TIP31C, TIP32C
ICES - 0.2
Emitter cut off current
(VEB = 5 V, IC= 0) IEBO - 1
ON Characteristics (1)
DC current gain
(IC= 1 A, VCE = 4 V)
(IC= 3 A, VCE = 4 V)
hFE 25
15
-
50
-
Collector - emitter saturation voltage
(IC= 3 A, IB= 375 mA) VCE (sat) - 1.2
V
Base - emitter on voltage
(IC= 3 A, VCE = 4 V) VBE (on) - 1.8
Dynamic Characteristics
Current gain - bandwidth product (2)
(IC= 500 mA, VCE = 10 V, fTEST = 1 KHz) fT3 - MHz
Small - signal current gain
(IC= 500 A, VCE = 10 V, f = 1 kHz) hfe 20 - -
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
(1) Pulse Test : Pulse width ≤300 µs, duty cycle ≤2%
(2) fT= hFE• fTEST
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)