TIP31, TIP32 High Power Bipolar Transistors Features: * Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C * Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A * Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. 2. 3. 4. Base Collector Emitter Collector (Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 NPN TIP31A TIP32C PNP TIP32A TIP32C 3 Amperes Complementary Silicon Power Transistors 60 - 100 Volts 40 Watts Dimensions : Millimetres Maximum Ratings Characteristic Symbol TIP31A TIP32A TIP31C TIP32C Unit 60 100 V Collector - emitter voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO 5 Collector current - continuous - peak IC 3 5 Base current IB 1 PD 40 0.32 W W/C TJ, TSTG -65 to +150 C Total power dissipation at tc = 25C derate above 25C Operating and storage junction temperature range A Thermal Characteristics Characteristic Symbol Maximum Unit Thermal resistance junction to case Rjc 3.125 C/W www.element14.com www.farnell.com www.newark.com Page <1> 15/12/11 V1.1 TIP31, TIP32 High Power Bipolar Transistors PD, Power Dissipation (Watts) Figure - 1 Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C Unless Otherwise Noted) Characteristic Symbol Minimum Maximum Unit OFF Characteristics Collector - emitter sustaining voltage (1) TIP31A, TIP32A VCEO (SUS) (IC = 30 mA, IB = 0) TIP31C, TIP32C Collector cut off current TIP31A, TIP32A (VCE = 30V, IB = 0) ICEO (VCE = 60V, IB = 0) TIP31C, TIP32C Collector cut off current TIP31A, TIP32A (VCE = 60 V, VEB = 0) ICES TIP31C, TIP32C (VCE = 100 V, VEB = 0) 60 100 - - 0.3 - 0.2 IEBO - 1 hFE 25 15 50 Collector - emitter saturation voltage (IC = 3 A, IB = 375 mA) VCE (sat) - 1.2 Base - emitter on voltage (IC = 3 A, VCE = 4 V) VBE (on) - 1.8 Current gain - bandwidth product (2) (IC = 500 mA, VCE = 10 V, fTEST = 1 KHz) fT 3 - MHz Small - signal current gain (IC = 500 A, VCE = 10 V, f = 1 kHz) hfe 20 - - Emitter cut off current (VEB = 5 V, IC = 0) V mA ON Characteristics (1) DC current gain (IC = 1 A, VCE = 4 V) (IC = 3 A, VCE = 4 V) - V Dynamic Characteristics (1) Pulse Test : Pulse width 300 s, duty cycle 2% (2) fT = hFE* fTEST www.element14.com www.farnell.com www.newark.com Page <2> 15/12/11 V1.1 TIP31, TIP32 High Power Bipolar Transistors Figure - 3 Turn-On Time t, Time (s) Figure - 2 Switching Time Equivalent Circuit Figure - 4 DC Current Gain IC, Collector Current (Amperes) t, Time (s) hFE DE Current Gain Figure - 5 Turn-Off Time IC, Collector Current (Amperes) IC, Collector Current (Amperes) Figure - 6 Active Region Safe Operating Area IC, Collector Current (Amperes) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on TJ (PK) = 150C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) = 150C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown VCE, Collector Emitter Voltage (Volts) www.element14.com www.farnell.com www.newark.com Page <3> 15/12/11 V1.1 TIP31, TIP32 High Power Bipolar Transistors Figure - 8 Capacitances C, Capacitance (pF) VCE, Collector - Emitter Voltage (Volts) Figure - 7 Collector Saturation Region VCE, Reverse Volatage (Volts) IB Base Current (mA) Figure - 9 "ON" Voltage Voltage (Volts) IC, Collector Current (A) Figure - 10 Collector Cut-off Region VBE, Base Emitter Voltage (Volts) IC, Collector Current (Amperes) Part Number Table Description Type High Power Bipolar Transistor Part Number TIP31A NPN High Power Bipolar Transistor TIP31C High Power Bipolar Transistor TIP32A PNP High Power Bipolar Transistor TIP32C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. 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This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2011. www.element14.com www.farnell.com www.newark.com Page <4> 15/12/11 V1.1