MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MMBT3904WT1 MMBT3906WT1 VCEO Collector-Base Voltage MMBT3904WT1 MMBT3906WT1 VCBO Emitter-Base Voltage MMBT3904WT1 MMBT3906WT1 VEBO Collector Current - Continuous MMBT3904WT1 MMBT3906WT1 IC Value 1 BASE Unit Vdc 40 -40 2 EMITTER Vdc 60 -40 3 Vdc 6.0 -5.0 1 2 mAdc SC-70/SOT-323 CASE 419 STYLE 3 200 -200 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM MMBT3904WT1 MMBT3906WT1 AM M 2A M 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. AM = Specific Device Code 2A = Specific Device Code M = Date Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 May, 2002 - Rev. 3 1 Device Package Shipping MMBT3904WT1 SC-70 3000/Tape & Reel MMBT3906WT1 SC-70 3000/Tape & Reel Publication Order Number: MMBT3904WT1/D MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 -40 - - 60 -40 - - 6.0 -5.0 - - - - 50 -50 - - 50 -50 MMBT3904WT1 40 70 100 60 30 - - 300 - - MMBT3906WT1 60 80 100 60 30 - - 300 - - MMBT3904WT1 - - 0.2 0.3 MMBT3906WT1 - - -0.25 -0.4 MMBT3904WT1 0.65 - 0.85 0.95 MMBT3906WT1 -0.65 - -0.85 -0.95 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) MMBT3904WT1 MMBT3906WT1 V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) (IC = -10 Adc, IE = 0) MMBT3904WT1 MMBT3906WT1 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) (IE = -10 Adc, IC = 0) MMBT3904WT1 MMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) - VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Vdc VBE(sat) 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 2 Vdc MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 300 250 - - - - 4.0 4.5 - - 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) MMBT3904WT1 MMBT3906WT1 fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 MHz Cobo pF Cibo pF k hie X 10-4 hre hfe - mhos hoe NF dB SWITCHING CHARACTERISTICS Symbol Min Max Unit Delay Time Characteristic (VCC = 3.0 Vdc, VBE = -0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) Condition MMBT3904WT1 MMBT3906WT1 td - - 35 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tr - - 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) MMBT3904WT1 MMBT3906WT1 ts - - 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tf - - 50 75 ns MMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s +3 V +10.9 V 275 10 k 0 CS < 4 pF* < 1 ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 500 500 IC/IB = 10 tr @ VCC = 3.0 V 30 20 40 V 15 V MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 t s , STORAGE TIME (ns) IC/IB = 20 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Figure 4. Rise Time IC/IB = 10 30 50 70 100 200 IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 20 VCC = 40 V IB1 = IB2 300 200 IC/IB = 10 5.0 7.0 10 200 500 ts = ts - 1/8 tf IB1 = IB2 30 20 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) IC/IB = 20 1.0 MMBT3904WT1 IC, COLLECTOR CURRENT (mA) 100 70 50 10 7 5 30 20 Figure 3. Turn-On Time 500 300 200 100 70 50 10 7 5 2.0 V td @ VOB = 0 V 1.0 t r, RISE TIME (ns) 200 100 70 50 10 7 5 VCC = 40 V IC/IB = 10 300 t f , FALL TIME (ns) TIME (ns) 300 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time http://onsemi.com 4 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 MMBT3904WT1 4.0 10 20 40 0 0.1 100 MMBT3904WT1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure 40 100 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE ( mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 20 10 5 2 1 10 MMBT3904WT1 50 0.1 0.2 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 10. Output Admittance Figure 9. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 3.0 2.0 1.0 0.7 0.5 10 MMBT3904WT1 5.0 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Voltage Feedback Ratio http://onsemi.com 5 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MMBT3904WT1 +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region TJ = 25C 1.0 MMBT3904WT1 V, VOLTAGE (VOLTS) MMBT3904WT1 VBE(sat) @ IC/IB =10 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients http://onsemi.com 6 180 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TJ = 25C TJ = 125C 10 MMBT3904WT1 CAPACITANCE (pF) 7.0 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 17. Capacitance http://onsemi.com 7 20 30 40 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 3V +9.1 V 275 < 1 ns 10 k 3V < 1 ns 275 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 s DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 18. Delay and Rise Time Equivalent Test Circuit Figure 19. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 500 500 MMBT3906WT1 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 10 7 5 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 MMBT3906WT1 300 200 t f , FALL TIME (ns) 300 200 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 20. Turn-On Time Figure 21. Fall Time MMBT3906WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS NF, NOISE FIGURE (dB) 4.0 (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) f = 1.0 kHz 10 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 1.0 12 SOURCE RESISTANCE = 200 IC = 1.0 mA NF, NOISE FIGURE (dB) 5.0 IC = 1.0 mA IC = 0.5 mA 8.0 6.0 4.0 IC = 50 A 2.0 IC = 100 A MMBT3906WT1 20 40 0 0.1 100 Figure 22. MMBT3906WT1 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) Figure 23. http://onsemi.com 8 40 100 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 300 hoe, OUTPUT ADMITTANCE ( mhos) MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 70 30 20 10 7.0 5.0 5.0 7.0 10 MMBT3906WT1 50 0.1 0.2 Figure 24. Current Gain 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k ) 5.0 7.0 Figure 25. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 26. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 Figure 27. Voltage Feedback Ratio http://onsemi.com 9 10 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 MMBT3906WT1 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 28. DC Current Gain 1.0 TJ = 25C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 VBE(sat) @ IC/IB = 10 TJ = 25C 0.8 V, VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 29. Collector Saturation Region VBE @ VCE = 1.0 V 0.6 MMBT3906WT1 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) +25C TO +125C -55C TO +25C 0 -0.5 MMBT3906WT1 +25C TO +125C -1.0 VS FOR VBE(sat) -55C TO +25C -1.5 -2.0 0 Figure 30. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 31. Temperature Coefficients http://onsemi.com 10 180 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 TJ = 25C TJ = 125C 10 MMBT3906WT1 CAPACITANCE (pF) 7.0 5.0 Cobo Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 32. Capacitance http://onsemi.com 11 20 30 40 MMBT3904WT1, NPN MMBT3906WT1, PNP INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150C - 25C 0.625C/W = 200 milliwatts The 0.625C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * * * 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 12 MMBT3904WT1, NPN MMBT3906WT1, PNP SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 33 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200C 150C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 140C 100C 100C 50C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 33. Typical Solder Heating Profile http://onsemi.com 13 MMBT3904WT1, NPN MMBT3906WT1, PNP PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 14 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MMBT3904WT1, NPN MMBT3906WT1, PNP Notes http://onsemi.com 15 MMBT3904WT1, NPN MMBT3906WT1, PNP Thermal Clad is a registered trademark of the Bergquist Company ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 16 MMBT3904WT1/D