7MBR25SA120 IGBT Modules IGBT MODULE (S series) 1200V / 25A / PIM Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage VCES VGES IC Collector current Brake Converter t No -IC PC VCES VGES IC o c e r Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Rating 1200 20 35 25 70 50 25 180 1200 20 25 15 50 30 110 1200 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous Tc=25C Tc=80C Tc=25C Tc=80C nd e mm ICP Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Condition 1ms 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V N*m 7MBR25SA120 IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.2 2.6 3000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Converter Thermistor IF=25A Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Turn-off time VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=25A VGE=15V RG=51 chip terminal IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V IF=25A chip terminal VR=1600V T=25C T=100C T=25/50C for nd e mm Symbol ot Thermal resistance ( 1 device ) N Contact thermal resistance o c e r * Rth(j-c) Rth(c-f) 1.0 0.3 V 3.2 0.35 1.0 0.2 465 3305 w ne Condition Min. 2.6 1.2 0.6 1.0 0.3 1.0 1.1 1.2 n. sig 5000 495 3375 pF s 1.2 0.6 2.1 2.2 0.35 0.25 0.45 0.08 de Thermal resistance Characteristics Item 0.35 0.25 0.1 0.45 0.08 2.3 2.4 mA A V V s mA V 1.5 1.0 mA 520 3450 K Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Unit 0.69 1.30 1.14 0.90 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [In v er ter ] [T h e rm is to r] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 9 (E u ) 7 (B ) 1 7 (E v ) 4 (U ) 1 4 (G b) 1 6 (G w ) 1 8 (G v) 1 3 (G x) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) http://store.iiic.cc/ s mA A V 9 C/W 7MBR25SA120 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 60 Tj= 125 C (typ.) 60 15V 15V 50 40 40 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 12V VGE= 20V 50 10V 30 20 10 12V 10V 30 20 10 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] 2 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 5 o Tj= 25 C (typ.) 10 o 4 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 60 o Tj= 25 C 50 3 Collector - Emitter voltage : VCE [ V ] Tj= 125 C Collector - Emitter voltage : VCE [ V ] 40 30 0 0 1 4 nd e mm 10 2 eco 3 t No Ic= 25A Ic= 12.5A 0 4 5 5 10 r 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) o Vcc=600V, Ic=25A, Tj= 25 C o Collector - Emitter voltage : VCE [ V ] VGE=0V, f= 1MHz, Tj= 25 C 10000 Ic= 50A 2 Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 20 . de 6 Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 150 Gate charge : Qg [ nC ] http://store.iiic.cc/ 200 0 250 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 8 7MBR25SA120 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=25C 1000 1000 toff toff 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr 100 ton tr tf 100 tf 50 50 0 10 20 30 40 0 10 Collector current : Ic [ A ] 20 30 40 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51 Vcc=600V, Ic=25A, VGE=15V, Tj=25C 7 5000 o Eon(125 C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 500 de 5 4 ton tr 100 ew 3 2 nd e mm . n sig n r o f toff o Eon(25 C) o Eoff(125 C) o Eoff(25 C) o Err(125 C) 1 tf 50 10 50 100 Gate resistance : Rg [ t No o c e r o Err(25 C) 0 500 0 10 20 ] 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area Vcc=600V, Ic=25A, VGE=15V, Tj=125C 20 +VGE=15V, -VGE<15V, Rg>51, Tj<125C = = = 60 50 15 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 6 10 40 30 20 5 Eoff 10 Err 0 0 10 50 100 Gate resistance : Rg [ 500 0 ] 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Modules 7MBR25SA120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=51 [ Inverter ] Forward current vs. Forward on voltage (typ.) 60 300 o Tj=125 C o Tj=25 C o Reverse recovery current : Irr [ A ] trr(125 C) 40 30 20 Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 50 100 o trr(25 C) o Irr(125 C) 10 o Irr(25 C) 0 10 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 30 40 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 60 o Tj= 25 C Forward current : IF [ A ] 50 o Tj= 125 C 30 n sig ew n for 20 10 0 0.0 . de 40 0.4 0.8 nd e mm eco 1.2 1.6 2.0 r Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 100 IGBT[Brake] Conv. Diode o IGBT[Inverter] Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] 1 0.1 10 1 0.01 0.001 0.01 0.1 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 Temperature [ http://store.iiic.cc/ 80 o C] 100 120 140 160 180 7MBR25SA120 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 35 Tj= 125 C (typ.) 35 15V 12V 15V VGE= 20V 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 30 20 10V 15 10 5 12V 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o 35 Tj= 25 C (typ.) 10 o o Tj= 125 C Tj= 25 C 30 Collector - Emitter voltage : VCE [ V ] 8 20 10 mm 5 0 0 1 2 t No 4 Ic= 15A 2 Ic= 7.5A 0 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 Ic= 30A d en o c e r 3 4 Collector - Emitter voltage : VCE [ V ] o Vcc=600V, Ic=15A, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 15 . de 6 Cies 1000 Coes o C 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 IGBT Modules 7MBR25SA120 Outline Drawings, mm de ew n for nd e mm t No o c e r http://store.iiic.cc/ . n sig