TOSHIBA 2SC3148 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2$C3148 SWITCHING REGULATOR AND HIGH VOLTAGE. INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 10.3MAX. 3640.2 e Excellent Switching Times (I=0.8A) pert ot | . tp=1.0us Max., tp=1.048 Max. | @ High Collector-Emitter Breakdown Voltage : VcROQ=800V ~ MAXIMUM RATINGS (Ta =25C) zZ = CHARACTERISTIC SYMBOL | RATING | UNIT o | Collector-Base Voltage VCBO 900 Vv Collector-Emitter Voltage VCEO 800 Vv Emitter-Base Voltage VEBO 7 Vv DC I 3 Collector Current C A Pulse Icp Base Current Ip 1 A 1. BASE _ aro 2. COLLECTOR (HEAT SINK) Collector Power Ta=25C Po 1.5 W 3. EMITTER Dissipation = 95 P Te= 25C 40 JEDEC TO-220AB Junction Temperature Tj 150 C EIAJ SC_46 Storage Temperature Range Tstg 55~150 C TOSHIBA 2-10A1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 1.9 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Icpo | VoRp=800V, In=0 100 | pA Emitter Cut-off Current IRBO VEB=7V, Ic=0 1 | mA Collector-Base Breakdown Voltage V (BR) CBO| Ic =1mA, Ip=0 900 _ _ Vv Collector-Emitter Breakdown _ _ Voltage V (BR) CEO| Ic =10mA, Ip=0 800 Vv DC Current Gain hFE VcE=5V, Ic=0.8A 10 Collector-Emitter Saturation Voltage VCE (sat) |Ic=0.8A, Ip=0.16 A | | o6 | v Base-Emitter Saturation Voltage | VBE (sat) |Ic=0.8V, IR=0.16A 1.2 Vv 2 Vcc =4Q0V Rise Time ty Ip1 pol g 1.0 Woe : : : : Ip2 IB Switching Time] Storage Time tstg INPUT OL our. 4.0 pS UT 1B1=0.08A A TB2 i B1=0. _ _ Fall Time te DUTY CYCLE<1% 1.0 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/3TOSHIBA 2SC3148 Ic VCE hFE Ic 100 COMMON EMITTER COMMON EMITTER 4 Te = 25C Vv, =5V 4 1 BO CE 2 a 7 = 30 Tc =100C Zz < eS o & & A i fof g 5 10 5 o 2 4 A 8 & 3 0 2 4 6 8 10 12 14 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR CURRENT Ic (A) VBE (sat) Ic VCE (sat) Ic COMMON EMITTER Ig/Ip=5 an Tco=100C S wo BASE-EMITTER SATURATION VOLTAGE VBE (sat) (V) COMMON EMITTER I/Tp=5 a 25 55 COLLECTOR-EMITTER SATURATION VOLTAGE VoR (eat) (V) 0.03 0.1 0.3 1 3 0 0.1 0.3 1 3 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ig (A) SWITCHING TIME - Ic I VBE . COMMON EMITTER I=10 Igi=5Ip2 s Vor =5V @ PULSE 2 ~ WIDTH = 20 ys S DUTY CYCLES 1% & 5 Te=25C & o & z 5 Tc=100C = 5 e Oo = B = 3 wR ml rd o 3 55 0 0.2 0.4 0.6 0.8 1.0 1.2 0.05 01 0.8 1 3 10 BASE-EMITTER VOLTAGE Vpr (V) COLLECTOR CURRENT Ic (A) 961001 EAA2" @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-09-01 2/3TOSHIBA 25C3148 I (A) COLLECTOR CURRENT 0.5 0.3 0.1 0.05 0.03 0.03 SAFE OPERATING AREA MAX, (PULSED) XX 3ms%X lms > 100y8 * 0 NTINUO 1 10msX DC OPERATION To=25C %* SINGLE NONREPETITIVE PULSE Te=25C CURVES MUST BE DERATED VcEo MAX. LINEARLY WITH INCREASE IN TEMPERATURE. 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE Veg (V) ps XK 1000 rth - tw CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (INGLE NONREPETITIVE PULSE) @ INFINITE HEAT SINK 2) NO HEAT SINK COrw) TRANSIENT THERMAL RESISTANCE th 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) Pc - Tc COLLECTOR DISSIPATION Pc (W) 0 40 80 120 160 200 220 CASE TEMPERATURE Te (C) 1997-09-01 3/3