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MOS FIELD EFFECT TRANSISTOR
NP40N055EHE, NP40N055KHE
NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
2002, 2007
Document No. D14092EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP40N055EHE-E1-AY Note1, 2
NP40N055EHE-E2-AY Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP40N055KHE-E1-AY Note1
NP40N055KHE-E2-AY Note1
Pure Sn (Tin) Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP40N055CHE-S12-AZ Note1, 2 Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g
NP40N055DHE-S12-AY Note1, 2 TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP40N055MHE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g
NP40N055NHE-S18-AY Note1
Pure Sn (Tin)
Tube 50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
R
DS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low input capacitance
Ciss = 1070 pF TYP.
• Built-in gate protection diode
<R>
(TO-220)
(TO-262)
(TO-263)
Data Sheet D14092EJ6V0DS
2
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±40 A
Drain Current (Pulse) Note1 ID(pulse) ±100 A
Total Power Dissipation (TA = 25°C) PT 1.8 W
Total Power Dissipation (TC = 25°C) PT 66 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note2 IAS 29/21/7 A
Single Avalanche Energy Note2 EAS 0.8/44/49 mJ
Notes 1. PW ≤ 10
μ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 2.27 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
Data Sheet D14092EJ6V0DS 3
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 20 A 18 23 mΩ
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 2.0 3.0 4.0 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 20 A 7 14 S
Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10
μ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Input Capacitance Ciss 1070 1610 pF
Output Capacitance Coss 190 280 pF
Reverse Transfer Capacitance Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz 95 180 pF
Turn-on Delay Time td(on) 16 35 ns
Rise Time tr 9.2 23 ns
Turn-off Delay Time td(off) 29 57 ns
Fall Time tf
ID = 20 A,
VGS = 10 V,
VDD = 28 V,
RG = 1 Ω
9.2 23 ns
Total Gate Charge QG 23 35 nC
Gate to Source Charge QGS 6 nC
Gate to Drain Charge QGD
ID = 40 A,
VDD = 44 V,
VGS = 10 V 9 nC
Body Diode Forward Voltage VF(S-D) IF = 40 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr 38 ns
Reverse Recovery Charge Qrr
IF = 40 A, VGS = 0 V,
di/dt = 100 A/
μ
s 46 nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→
0
V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1 %
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10
%
0
0
90
%
90
%
90
%
V
GS
V
DS
t
on
t
off
t
d(on)
trt
d(off)
t
f
10
%10
%
μ
Data Sheet D14092EJ6V0DS
4
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - °C
P
T
- Total Power Dissipation - W
0025 50 75 100 125 150 175 200
70
60
50
40
30
20
10
Figure.3 FORWARD BIAS SAFE OPERATING AREA
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
0
025 50 75 100 125 150 175 200
20
40
60
80
100
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - °C
Single Pulse Avalanche Energy - mJ
0
25
30
40
50
60
50 75 100 125 150 175
10
20
T
C
- Case Temperature - °C
IAS = 7 A
0.8 mJ
49 mJ
44 mJ
29 A
21 A
Figure5.
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - °C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
R
th(ch-A)
= 83.3°C/W
10 100
R
th(ch-C)
= 2.27°C/W
μμ
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1 10 100
T
C
= 25°C
Single Pulse
0.1
I
D(pulse)
PW = 10 μs
100 μs
1 ms
DC
R
DS(on)
Limited
(V
GS
= 10 V)
I
D(DC)
Power Dissipation
Limited
Data Sheet D14092EJ6V0DS 5
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - °C
VGS(th) - Gate to Source Threshold Voltage - V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
042681012
10
1
100
14 16 18
0.1 10
20
30
40
50
I
D
- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
10
10.1
50
20
30
40
10 100
Pulsed
0
VGS = 10 V
0.01
0.01 0.1 1 10 100
Pulsed
Pulsed
VDS = 10 V
75°C
25°C
−55°CID = 20 A
1.0
VDS = VGS
ID = 250 μA
2.0
3.0
4.0
−50 0 50 100 150
0
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
VDS - Drain to Source Voltage - V
ID - Drain Current - A
VGS - Gate to Source Voltage - V
ID - Drain Current - A
1
0.1 002354
40
10
100
1000
Pulsed
100
120
80
60
1
Pulsed
2
VGS =10 V
34 6 75
VDS = 10 V
20
TA = −55°C
25°C
75°C
150°C
175°C
TA = 175°C
Data Sheet D14092EJ6V0DS
6
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - °C
RDS(on) - Drain to source On-state Resistance - mΩ
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE Figure15. SWITCHING CHARACTERISTICS
0
10
−50
20
30
40
050 100 150
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
50
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS = 10 V
1.0
IF - Diode Forward Current - A
01.5
V
F(S-D)
-
Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
10.1
0.1
100
10
1000
10000
1 10 100
VGS = 0 V
f = 1 MHz
1
10
1000
100
10 100
VGS - Gate to Source Voltage - V
IF - Diode Forward Current - A
trr - Reverse Recovery Time - ns
di/dt = 100 A/μs
VGS = 0 V
1
0.1
10
1 10 100
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
00402010 30
20
40
60
80
2
4
VDS
1000
100
6
10
12
14
16
8
VGS
Pulsed
VGS = 10 V
0 V
Coss
Crss
Ciss
td(on)
td(off)
tf
tr
VDD = 44 V
ID = 40 A
28 V
11 V
ID = 20 A
VDD = 28 V
VGS = 10 V
RG = 1 Ω
Data Sheet D14092EJ6V0DS 7
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK)
1.4 ± 0.2
1.0 ± 0.5
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
123
5.7 ± 0.4
4
4.8 MAX. 1.3 ± 0.2
0.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7 ± 0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8 ± 0.2
10.0 ± 0.3
8.0 TYP.
2.54
0.75 ± 0.2
9.15 ± 0.3
2.54 ± 0.25
15.25 ± 0.5
1.35 ± 0.3
123
4
2.5
4.45 ± 0.2
1.3 ± 0.2
0.5 ± 0.2
0 to 8
ο
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No plating 7.88 MIN.
0.025 to
0.25
0.25
3)TO-220 (MP-25) Note 4)TO-262 (MP-25 Fin Cut) Note
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10.6 MAX.
10.0 TYP. 3.6 ± 0.2
4
3.0 ± 0.3
1.3 ± 0.2
0.75 ± 0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2 2.8 ± 0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10 TYP.
1.3 ± 0.2
0.75 ± 0.3
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2 2.8 ± 0.2
1.0 ± 0.5
4
Note Not for new design
<R>
Data Sheet D14092EJ6V0DS
8
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
5)TO-220 (MP-25K) 6)TO-262 (MP-25SK)
4
2.8 ± 0.3
10.0 ± 0.2 3.8 ± 0.2
φ
6.3 ± 0.3
4.45 ± 0.2
1.3 ± 0.2
0.8 ± 0.1
0.5 ± 0.2 2.5 ± 0.2
1.27 ± 0.2
3.1 ± 0.2
15.9 MAX.
123
13.7 ± 0.3
2.54 TYP. 2.54 TYP. 1.Gate
2.Drain
3.Source
4.Fin (Drain)
4123
10.0 ± 0.2 4.45 ± 0.2
1.3 ± 0.2
13.7 ± 0.3
0.8 ± 0.1
1.27 ± 0.2
0.5 ± 0.2 2.5 ± 0.2
2.54 TYP. 2.54 TYP.
1.2 ± 0.38.9 ± 0.2
10.1 ± 0.3
3.1 ± 0.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D14092EJ6V0DS 9
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel sideDraw-out side
MARKING INFORMATION
40N055
Lot code
NEC
HE
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow
MP-25ZJ, MP-25ZK
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Partial heating
MP-25, MP-25 Fin Cut
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P300
Caution Do not use different soldering methods together (except for partial heating).
<R>
<R>
<R>
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NH
E
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
