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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055EHE, NP40N055KHE NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP40N055EHE-E1-AY Note1, 2 NP40N055EHE-E2-AY Note1, 2 NP40N055KHE-E1-AY Note1 NP40N055KHE-E2-AY Note1 NP40N055CHE-S12-AZ Note1, 2 NP40N055DHE-S12-AY Note1, 2 NP40N055MHE-S18-AY Note1 NP40N055NHE-S18-AY Note1 LEAD PLATING PACKING Pure Sn (Tin) Tape 800 p/reel PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES * Channel temperature 175 degree rated * Super low on-state resistance RDS(on) = 23 m MAX. (VGS = 10 V, ID = 20 A) * Low input capacitance (TO-262) Ciss = 1070 pF TYP. * Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14092EJ6V0DS00 (6th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2002, 2007 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25C) ID(DC) 40 A ID(pulse) 100 A Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25C) PT 1.8 W Total Power Dissipation (TC = 25C) PT 66 W Channel Temperature Tch 175 C Tstg -55 to +175 C Single Avalanche Current Note2 IAS 29/21/7 A Single Avalanche Energy Note2 EAS 0.8/44/49 mJ Storage Temperature Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.27 C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 C/W 2 Data Sheet D14092EJ6V0DS NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 18 23 m 4.0 V Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 20 A Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 3.0 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 20 A 7 14 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Input Capacitance Ciss VDS = 25 V, 1070 1610 pF Coss VGS = 0 V, 190 280 pF 95 180 pF Output Capacitance f = 1 MHz S Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) ID = 20 A, 16 35 ns tr VGS = 10 V, 9.2 23 ns 29 57 ns 9.2 23 ns 35 nC Rise Time VDD = 28 V, Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = 40 A, 23 Gate to Source Charge QGS VDD = 44 V, 6 nC 9 nC IF = 40 A, VGS = 0 V 1.0 V RG = 1 VGS = 10 V Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr IF = 40 A, VGS = 0 V, 38 ns Qrr di/dt = 100 A/s 46 nC Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10 % 90 % VDD VDS 90 % IAS 90 % VDS VGS 0 BVDSS VDS 10 % 10 % 0 Wave Form VDS ID VDD Starting Tch = 1 s Duty Cycle 1 % td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD Data Sheet D14092EJ6V0DS 3 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE TYPICAL CHARACTERISTICS (TA = 25C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 0 25 50 75 60 50 40 30 20 10 0 100 125 150 175 200 50 75 100 125 150 175 200 TC - Case Temperature - C Figure.3 FORWARD BIAS SAFE OPERATING AREA Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 100 d ite Lim0 V) n) o 1 ( S RDVGS = ( 10 ID(pulse) ID(DC) PW 10 1m DC Po Lim wer ite Dis sip d ati s =1 0 s 0 s on 1 TC = 25C Single Pulse 0.1 0.1 1 10 60 Single Pulse Avalanche Energy - mJ ID - Drain Current - A 25 0 TC - Case Temperature - C 49 mJ 44 mJ 50 40 IAS = 7 A 21 A 29 A 30 20 10 0.8 mJ 0 25 100 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 100 Rth(ch-A) = 83.3C/W 10 Rth(ch-C) = 2.27C/W 1 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14092EJ6V0DS 10 100 1000 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 120 Pulsed ID - Drain Current - A ID - Drain Current - A 100 100 TA = -55C 25C 75C 150C 175C 10 1 0.1 80 VGS =10 V 60 40 20 2 3 4 VDS = 10 V 6 7 5 Pulsed 0 0 10 TA = 175C 75C 25C -55C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed 40 30 VGS = 10 V 20 10 0 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - m Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed VDS = 10 V 0.01 0.01 4 3 5 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1 2 1 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 ID = 20 A 20 10 0 0 2 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 A 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet D14092EJ6V0DS 5 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed IF - Diode Forward Current - A 40 30 VGS = 10 V 20 10 Pulsed 100 VGS = 10 V 0V 10 1 ID = 20 A 0 -50 50 0 100 0.1 0 150 VF(S-D) - Source to Drain Voltage - V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 10 0.1 Crss 1 10 Figure15. SWITCHING CHARACTERISTICS 1000 100 tf 100 td(off) td(on) tr 10 VDD = 28 V VGS = 10 V 1 RG = 1 0.1 VDS - Drain to Source Voltage - V 10 1 10 100 16 80 14 12 60 VGS VDD = 44 V 28 V 11 V 40 10 8 6 4 20 2 VDS 0 0 IF - Diode Forward Current - A 6 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 100 1 0.1 10 1 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1.5 1.0 0.5 Tch - Channel Temperature - C 10 ID = 40 A 20 30 QG - Gate Charge - nC Data Sheet D14092EJ6V0DS 40 VGS - Gate to Source Voltage - V 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to source On-state Resistance - m NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE PACKAGE DRAWINGS (Unit: mm) Note 1.3 0.2 10.0 0.3 No plating 7.88 MIN. 4 2 3 1.4 0.2 0.7 0.2 2.54 TYP. 9.15 0.3 8.0 TYP. 8.5 0.2 1 5.7 0.4 1.0 0.5 4 4.45 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 0.2 0.75 0.2 0.5 2.8 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 0.1 2.54 TYP. 1.3 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 0.2 2.8 0.2 0.75 0.3 2.54 TYP. 2 3 1.0 0.5 10 TYP. Note 4.8 MAX. 1.3 0.2 8.5 0.2 1.3 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. 3.6 0.2 10.0 TYP. 1.3 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 0.2 2.54 0.25 4.8 MAX. 10 TYP. 1.35 0.3 2)TO-263 (MP-25ZK) 15.25 0.5 1)TO-263 (MP-25ZJ) 3.0 0.3 <R> 0.5 0.2 2.8 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14092EJ6V0DS 7 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE 0.8 0.1 0.5 0.2 2.5 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 0.2 10.1 0.3 1 2 3 4.45 0.2 1.27 0.2 3.1 0.3 4 8.9 0.2 15.9 MAX. 1.27 0.2 2.54 TYP. 10.0 0.2 13.7 0.3 3 13.7 0.3 1 2 4.45 0.2 1.3 0.2 3.1 0.2 4 3.8 0.2 6.3 0.3 2.8 0.3 10.0 0.2 1.2 0.3 6)TO-262 (MP-25SK) 5)TO-220 (MP-25K) 0.8 0.1 0.5 0.2 2.54 TYP. 2.5 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14092EJ6V0DS NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 40N055 HE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14092EJ6V0DS 9 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE * The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1