1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc
Collector–Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0) V(BR)CBO –60 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO —
—–0.01
–10
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc) IEBO — –10 nAdc
Collector Cutoff Current
(VCE = –10 V) ICEO — –10 nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Order this document
by P2N2907A/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
P2N2907A
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
hFE 75
100
100
100
50
—
—
—
300
—
—
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat) —
—–0.4
–1.6
Vdc
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) —
—–1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
ton — 50 ns
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
td— 10 ns
Rise Time
IB1 = –15 mAdc) (Figures 1 and 5)
tr— 40 ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc) (Figure 2)
toff — 110 ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc) (Figure 2)
ts— 80 ns
Fall Time
IB1 = IB2 = –15 mAdc) (Figure 2)
tf— 30 ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
00
–16 V
200 ns
50
1.0 k
200
–30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V –6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
–30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
INPUT
Zo = 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
P2N2907A
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125
°
C
25
°
C
–55
°
C
VCE = –1.0 V
VCE = –10 V
hFE, NORMALIZED CURRENT GAIN
2.0
–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
CE
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA –500 mA
–0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT
300
–5.0
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
–5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25
°
C
500
300
100
70
50
30
20
10
7.0
5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
200 tf
t
′
s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
P2N2907A
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
IC = –50
µ
A
–100
µ
A
–500
µ
A
–1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
00.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
IC = –1.0 mA, Rs = 430
Ω
–500
µ
A, Rs = 560
Ω
–50
µ
A, Rs = 2.7 k
Ω
–100
µ
A, Rs = 1.6 k
Ω
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
–0.1
2.0
Figure 11. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–1.0
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
TJ = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
R
q
VC for VCE(sat)
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
COEFFICIENT (mV/
°
C)
20
10
7.0
5.0
3.0
–0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30
400
300
200
100
80
60
40
30
20
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
–0.8
–0.6
–0.4
–0.2
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
+0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Ceb
Ccb
VCE = –20 V
TJ = 25
°
C
R
q
VB for VBE
P2N2907A
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
P2N2907A
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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