Order this document by P2N2907A/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -60 Vdc Collector - Base Voltage VCBO -60 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 -- Vdc Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 -- Vdc Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX -- -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) ICBO -- -- -0.01 -10 Emitter Cutoff Current (VEB = -3.0 Vdc) IEBO -- -10 nAdc Collector Cutoff Current (VCE = -10 V) ICEO -- -10 nAdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBEX -- -50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width Adc v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 75 100 100 100 50 -- -- -- 300 -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 fT 200 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF ton -- 50 ns td -- 10 ns tr -- 40 ns toff -- 110 ns ts -- 80 ns tf -- 30 ns ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -500 mAdc, VCE = -10 Vdc)(1) hFE -- Collector - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1), (2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (Figure 2) v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0 ns 50 -16 V 200 ns Figure 1. Delay and Rise Time Test Circuit 2 INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125C 25C 1.0 - 55C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -3.0 -2.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C 30 20 tf td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 30 ts = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn-On Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time 3 P2N2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 C, CAPACITANCE (pF) 50 100 200 500 1.0 k 2.0 k 20 k Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product +0.5 -1.0 TJ = 25C -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 4 5.0 k 10 k f, FREQUENCY (kHz) 20 V, VOLTAGE (VOLTS) IC = -50 A -100 A -500 A -1.0 mA 4.0 0 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2907A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER 5 P2N2907A Motorola reserves the right to make changes without further notice to any products herein. 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