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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FDD3510H Dual N & P-Channel PowerTrench(R) MOSFET N-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190m Features General Description Q1: N-Channel These dual N and P- Channel enha ncement mode Pow er Max rDS(on) = 80m at VGS = 10V, ID = 4.3A MOSFETs ar e produ ced u sing Fa irchild Semiconductor 's advanced PowerT rench(R) process that has been especially Max rDS(on) = 88m at VGS = 6V, ID = 4.1A tailored to minimize on -state r esistance and yet maint Q2: P-Channel superior switching performance. Max rDS(on) = 190m at VGS = -10V, ID = -2.8A ain Applications Max rDS(on) = 224m at VGS = -4.5V, ID = -2.6A Inverter 100% UIL Tested H-Bridge RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Q1 80 Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous ID TC = 25C TA = 25C - Continuous - Pulsed Power Dissipation for Single Operation TC = 25C (Note 1) TA = 25C (Note 1b) Single Pulse Avalanche Energy EAS TJ, TSTG (Note 3) Operating and Storage Junction Temperature Range Units V V 20 20 13.9 -9.4 4.3 -2.8 20 -10 35 TA = 25C (Note 1a) PD Q2 -80 A 32 3.1 W 1.3 37 54 -55 to +150 mJ C Thermal Characteristics RJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5 RJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9 C/W Package Marking and Ordering Information Device Marking FDD3510H Device FDD3510H (c)2008 Fairchild Semiconductor Corporation FDD3510H Rev. 1.4 Package TO-252-4L 1 Reel Size 13" Tape Width 16mm Quantity 2500 units www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET March 2015 Symbol Parameter Test Conditions Type Min Q1 Q2 80 -80 Typ Max Units Off Characteristics ID =250A, VGS = 0V ID = -250A, VGS = 0V BVDSS Drain to Source Breakdown Voltage BVDSS TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 64V, VGS = 0V VDS = -64V, VGS = 0V IGSS Gate to Source Leakage Current ID = 250A, referenced to 25C ID = -250A, referenced to 25C Q1 Q2 V 84 -67 mV /C Q1 Q2 1 -1 A VGS = 20V, VDS = 0V Q1 Q2 100 100 nA nA VGS = VDS, ID = 250A VGS = VDS, ID = -250A Q1 Q2 4.0 -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 2.0 -1.0 2.6 -1.6 Q1 Q2 -6.7 4.6 Q1 64 70 121 80 88 152 Q2 153 184 259 190 224 322 VDD = 10V, ID = 4.3A VDD = -5V, ID = -2.8A Q1 Q2 15 6.8 Q1 VDS = 40V, VGS = 0V, f = 1MHZ Q1 Q2 600 660 800 880 pF Q1 Q2 56 50 75 70 pF Q1 Q2 27 25 41 40 pF Q1 Q2 1.7 7.2 Q1 Q2 7 6 13 11 ns Q1 Q2 2 3 10 10 ns Q1 Q2 16 25 29 40 ns Q1 Q2 2 5 10 10 ns Q1 Q2 13 14 18 20 nC Q1 Q2 2.3 1.9 nC Q1 Q2 3.2 2.9 nC ID = 250A, referenced to 25C ID = -250A, referenced to 25C VGS = 10V, ID = 4.3A VGS = 6.0V, ID = 4.1A VGS = 10V, ID = 4.3A, TJ = 125C VGS = -10V, ID = -2.8A VGS = -4.5V, ID = -2.6A VGS = -10V, ID = -2.8A, TJ = 125C mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -40V, VGS = 0V, f = 1MHZ f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge FDD3510H Rev. 1.4 Q1 VDD = 40V, ID = 4.3A, VGS = 10V, RGEN = 6 Q2 VDD = -40V, ID = -2.8A, VGS = -10V, RGEN = 6 Q1 VGS = 10V, VDD = 40V, ID = 4.3A Q2 VGS = -10V, VDD = -40V, ID = -2.8A 2 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 -0.8 1.2 -1.2 V Q1 Q2 29 30 46 48 ns Q1 Q2 28 30 45 48 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.6A VGS = 0V, IS = -2.6A (Note 2) (Note 2) Q1 IF = 4.3A, di/dt = 100A/s Q2 IF = -2.8A, di/dt = 100A/s Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. Q1 a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper Q2 a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V. FDD3510H Rev. 1.4 3 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 4.0 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = 4.5V 15 PULSE DURATION = Xs DUTY CYCLE = X%MAX 10 VGS = 4V 5 VGS = 3.5V 0 0 1 2 3 VGS = 3.5V 3.5 3.0 VGS = 4V 2.5 VGS = 4.5V 2.0 VGS = 6V 1.5 1.0 VGS = 10V 0.5 4 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 300 ID = 4.3A VGS = 10V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics 2 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) 15 VDS = 5V 10 TJ = 150oC TJ = 25oC 5 TJ = -55oC 0 5 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 4 TJ = 25oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 3 TJ = 125oC 100 20 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = 4.3A 200 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = -55oC 0.01 0.001 0.0 6 TJ = 25oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD3510H Rev. 1.4 4 1.2 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 1000 ID = 4.3A Ciss 8 VDD = 40V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 30V VDD = 50V 4 100 Coss 2 f = 1MHz VGS = 0V 0 0 2 4 6 8 10 12 10 0.1 14 Figure 7. Gate Charge Characteristics 10 100 Figure 8. Capacitance vs Drain to Source Voltage 15 5 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 3 TJ = 25oC 2 TJ = 125oC 12 VGS = 10V 9 VGS = 6V 6 3 o RJC = 3.5 C/W 1 0.01 0.1 1 0 25 10 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 50 5 P(PK), PEAK TRANSIENT POWER (W) 10 10 100us 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) Crss THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RJC = 3.5oC/W 0.1 0.05 0.5 TC = 25oC 1 10 1ms 10ms 100ms DC 100 VDS, DRAIN to SOURCE VOLTAGE (V) 10 3 SINGLE PULSE RJC = 3.5oC/W 10 TC = 25oC 2 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDD3510H Rev. 1.4 VGS = 10V 4 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC SINGLE PULSE o RJC = 3.5 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA RJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve FDD3510H Rev.1 .4 6 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 2.5 VGS = -4.5V VGS = -10V -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 8 VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 6 4 VGS = -3V 2 VGS = -2.5V 0 0 1 2 3 4 VGS = -2.5V VGS = -3V 2.0 VGS = -3.5V 1.5 VGS = -4.5V 1.0 0.5 0 5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 8 10 600 ID = -2.8A VGS = -10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 6 -ID, DRAIN CURRENT(A) Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage Figure 15. On- Region Characteristics ID = -2.8A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 500 400 TJ = 125oC 300 200 TJ = 25oC 100 100 125 150 4 2 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 18. On-Resistance vs Gate to Source Voltage Figure 17. Normalized On-Resistance vs Junction Temperature 10 -IS, REVERSE DRAIN CURRENT (A) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 8 VDS = -5V 6 4 TJ = 150oC 2 TJ = 25oC TJ = -55oC 0 1 2 3 4 1 TJ = 150oC TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics FDD3510H Rev. 1.4 VGS = 0V Figure 20. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25C unless otherwise noted 1000 ID = -2.8A Ciss 8 VDD = -40V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = -30V VDD = -50V 4 100 2 f = 1MHz VGS = 0V 0 0 2 4 6 8 10 12 14 1 10 100 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 22. Capacitance vs Drain to Source Voltage Figure 21. Gate Charge Characteristics 10 -ID, DRAIN CURRENT (A) 4 3 TJ = 25oC 2 TJ = 125oC 8 VGS = -10V 6 VGS = -4.5V 4 2 o RJC = 3.9 C/W 1 0.1 1 0 25 10 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 24. Maximum Continuous Drain Current vs Case Temperature Figure 23. Unclamped Inductive Switching Capability 20000 P(PK), PEAK TRANSIENT POWER (W) 20 10000 10 -ID, DRAIN CURRENT (A) Crss 10 0.1 16 Qg, GATE CHARGE(nC) -IAS, AVALANCHE CURRENT(A) Coss 100us 1ms 1 THIS AREA IS LIMITED BY rds(on) 10ms SINGLE PULSE TJ = MAX RATED 100ms o RJC = 3.9 C/W 0.1 DC TC = 25oC 0.05 1 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: SINGLE PULSE X -o Tx 3.9 C/W RJC = ------------------I = I25 125 1000 TX = 25oC 100 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (s) Figure 25. Forward Bias Safe Operating Area FDD3510H Rev. 1.4 VGS = -10V Figure 26. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE o RJC = 3.9 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 27. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA RJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 28. Transient Thermal Response Curve FDD3510H Rev. 1.4 9 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench (R) MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25C unless otherwise noted 6.73 6.35 A 5.46 5.21 B 6.00 MIN 1.25 1.15 0.10 M C A B 6.50 MIN 6.22 5.97 6.25 1.01 0.64 1 5 0.68 0.81 F 0.61 0.70 0.55 0.10 M 3.00 MIN 1.14 0.80 MIN 4.56 1.14 C A B 4.56 SEE NOTE D 2.39 2.18 4.32 MIN C 0.61 0.46 5.21 MIN SEE DETAIL "A" 5 10.41 9.40 1 0.10 C 0.51 0.127 MAX GAGE PLANE SEATING PLANE 1.78 1.40 (2.82) F 0-10 0.61 0.46 DETAIL A SCALE 2:1 NOTES: UNLESS OTHERWISE SPECIFED A. THIS PACKAGE CONFORMS TO JEDEC, TO252 VARIATION AD. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D. HEATSINK TOP EDGE COULD BE IN CHAMFERED CORNERS OR EDGE PROTRUSION. E. DIMENSIONS AND TOLERANCES AS PER ASME Y14.5-2009. F EXCEPTION TO TO-252 STANDARD. G. FILE NAME: TO252B05REV3 H. 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