© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 5
1Publication Order Number:
NTMFS5844NL/D
NTMFS5844NL,
NVMFS5844NL
Power MOSFET
60 V, 61 A, 12 mW, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5844NLWF − Wettable Flanks Product
•NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS "20 V
Continuous Drain Cur-
rent RYJ−mb (Notes 1,
2, 3, 4) Steady
State
Tmb = 25°CID61 A
Tmb = 100°C 43
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Tmb = 25°CPD107 W
Tmb = 100°C 54
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4) Steady
State
TA = 25°CID11.2 A
TA = 100°C 8.0
Power Dissipation
RqJA (Notes 1 & 3)
TA = 25°CPD3.7 W
TA = 100°C 1.8
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 247 A
Current Limited by Package
(Note 4)
TA = 25°C IDmaxPkg 80 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
175
°C
Source Current (Body Diode) IS60 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 31 A, L = 0.1 mH, RG = 25 W)
EAS 48 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb 1.4 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA 41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
V(BR)DSS RDS(ON) MAX ID MAX
60 V
12 mW @ 10 V
61 A
16 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION