SMBT3904...MMBT3904 NPN Silicon Switching Transistors * High DC current gain: 0.1 mA to 100 mA * Low collector-emitter saturation voltage * For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package * Complementary types: SMBT3906... MMBT3906 * SMBT3904S: For orientation in reel see package information below * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration SMBT3904/MMBT3904 s1A 1=B SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 2=E 3=C - - Package - SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation- Ptot Value 200 330 TS 115C, SOT363, SMBT3904S 250 Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) V mA mV TS 71C, SOT23, SMBT3904 Junction temperature Unit 150 C -65 ... 150 Value RthJS SMBT3904/MMBT3904 240 SMBT3904S 140 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - V(BR)EBO 6 - - ICBO - - 50 IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain1) - hFE IC = 100 A, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.2 IC = 50 mA, IB = 5 mA - - 0.3 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage1) 1Pulse VBEsat test: t < 300s; D < 2% 2 2012-08-21 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 300 - - Ccb - - 3.5 Ceb - - 8 td - - 35 tr - - 35 tstg - - 200 tf - - 50 F - - 5 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure dB IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 1 k 3 2012-08-21 SMBT3904...MMBT3904 Test circuits Delay and rise time +3.0 V 300 ns 275 D = 2% +10.9 V 0 10 k C -0.5 V <4.0 pF <1.0 ns EHN00061 Storage and fall time +3.0 V t1 10 < t 1 < 500 s D = 2% 275 +10.9 V 0 -9.1 V 10 k C 1N916 <1.0 ns <4.0 pF EHN00062 4 2012-08-21 SMBT3904...MMBT3904 DC current gain hFE = (IC) Saturation voltage IC = (VBEsat ; VCEsat) VCE = 1 V, normalized hFE = 10 10 3 EHP00756 2 C mA 10 2 125 C hFE 5 V BE V CE 25 C 10 2 -55 C 10 1 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 mA10 10 0 0 0 0.2 0.4 0.6 IC 0.8 1.0 V 1.2 V BE sat , V CE sat Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) SMBT3904/MMBT3904 360 9 mW pF 270 6 Ptot CCB(CEB ) 300 7 5 210 180 CEB 4 150 120 3 90 2 60 CCB 1 0 0 240 30 4 8 12 16 A 0 0 22 VCB(VEB 5 15 30 45 60 75 90 105 120 C 150 TS 2012-08-21 SMBT3904...MMBT3904 Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) SMBT3904S SMBT3904/ MMBT3904 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 125 100 10 0 75 50 25 0 0 15 30 45 60 90 105 120 C 75 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 TS s 10 0 10 0 tp Permissible Pulse Load Permissible Puls Load RthJS = (t p) Ptotmax/PtotDC = (tp ) SMBT3904S SMBT3904/MMBT3904 10 3 EHP00935 10 3 Ptot max Ptot DC K/W tp tp D= T T RthJS 10 2 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 1 10 0 5 10 0 -6 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 10 -4 10 -3 10 -2 10 tp -1 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 6 2012-08-21 SMBT3904...MMBT3904 Delay time td = (IC) Rise time tr = (IC) Permissible Pulse Load Ptotmax/PtotDC = (tp ) SMBT3904S Ptotmax/PtotDC 10 3 EHP00761 10 3 ns - t r ,t d D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 tr td h FE = 10 10 2 VCC = 3 V 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 10 0 tp Storage time tstg = (IC) 5 10 1 5 10 2 C Fall time tf = (IC) EHP00762 10 3 EHP00763 10 3 ns ns ts 25 C 125 C tf 25 C 125 C h FE = 20 10 VCC = 40 V 10 2 10 2 h FE = 20 10 h FE = 20 10 1 10 0 0 10 mA 10 3 10 1 5 10 1 5 10 2 10 0 0 10 mA 10 3 C h FE = 10 5 10 1 5 10 2 mA 10 3 C 7 2012-08-21 SMBT3904...MMBT3904 Rise time tr = (I C) EHP00764 10 3 ns tr 25 C 10 2 VCC = 40 V h FE = 10 125 C 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 C 8 2012-08-21 Package SOT23 SMBT3904...MMBT3904 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 9 2012-08-21 Package SOT363 SMBT3904...MMBT3904 Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 10 2012-08-21 SMBT3904...MMBT3904 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2012-08-21