CREAT BY ART
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Typical IR less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UNIT
P
PK
Watts
P
D
Watts
T
JO
C
T
STG O
C
1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 thru Types P6SMB220A
2. Electrical Characterstics Apply in Both Directions
PART NO.
Note 1: "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
PART NO.
P6SMB20A
P6SMB20A
P6SMB20A
Document Number: DS_D1405062 Version: J14
PREFERRED P/N AEC-Q101
QUALIFIED
EXAMPLE
P6SMB SERIES
Taiwan Semiconductor
Surface Mount Transient Voltage Suppressor
FEATURES
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Moisture sensitivity level: level 1, per J-STD-020
A
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AA (SMB)
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
Typical thermal resistance R
θJC
R
θJA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1) 600
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
100
Storage temperature range - 55 to +150
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2) V
F
3.5 / 5.0 Volts
Operating junction temperature range - 55 to +150
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING CODE GREEN COMPOUND
CODE
PACKAGE PACKING
SMB 850 / 7" Plastic reel
R4 SMB 3,000 / 13" Paper reel
M4
DO-214AA (SMB)
Steady state power dissipation 3
P6SMB20AHR5 H R5 AEC-Q101 qualified
SMB 3,000 / 13" Plastic reel
DESCRIPTION
℃/W
10
55
Note 2: V
F
=3.5V on P6SMB6.8 thru P6SMB91 Devices and V
F
=5.0V on P6SMB100 thru P6SMB220 Device.
P6SMBxxxx
(Note 1) Prefix "H" Suffix "G"
R5
P6SMB20A R5G R5 G Green compound
PACKING CODE GREEN
COMPOUND
P6SMB20A R5 R5
CREAT BY ART
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405062 Version: J14
P6SMB SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (oC)
FIG.2 PULSE DERATING CURVE
10
100
1 10 100
IFSM, PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms Single Half Sine Wave
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak Value
IPPM
tr=10
μ
s
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
10
100
1000
10000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
VR
=
0
MEASURED at
STAND-OFF
VOLTAGE,Vwm
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
FIG. 1 PEAK PULSE POWER RATING CURVE
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
CREAT BY ART
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltag
e
Temperature
I
T
V
WM
@ V
WM
Current I
RSM
@ I
PPM
Coefficient
Min Max (mA) (V) I
D
(uA) (A) (Note 2) Vc(V) of V
BR
(%/℃)
P6SMB6.8 KDJ 6.12 7.48 10 5.50 1000 58 10.8 0.057
P6SMB6.8A KEJ 6.46 7.14 10 5.80 1000 60 10.5 0.057
P6SMB7.5 KFJ 6.75 8.25 10 6.05 500 53 11.7 0.061
P6SMB7.5A KGJ 7.13 7.88 10 6.40 500 55 11.3 0.061
P6SMB8.2 KHJ 7.38 9.02 10 6.63 200 50 12.5 0.065
P6SMB8.2A KKJ 7.79 8.61 10 7.02 200 52 12.1 0.065
P6SMB9.1 KLJ 8.19 10.00 1.0 7.37 50 45 13.8 0.068
P6SMB9.1A KMJ 8.65 9.55 1.0 7.78 50 47 13.4 0.068
P6SMB10 KNJ 9.00 11.00 1.0 8.10 10 42 15.0 0.073
P6SMB10A KPJ 9.50 10.5 1.0 8.55 10 43 14.5 0.073
P6SMB11 KQJ 9.90 12.1 1.0 8.92 1 38 16.2 0.075
P6SMB11A KRJ 10.5 11.6 1.0 9.40 1 40 15.6 0.075
P6SMB12 KSJ 10.8 13.2 1.0 9.72 1 36 17.3 0.078
P6SMB12A KTJ 11.4 12.6 1.0 10.2 1 37 16.7 0.078
P6SMB13 KUJ 11.7 14.3 1.0 10.5 1 33 19.0 0.081
P6SMB13A KVJ 12.4 13.7 1.0 11.1 1 34 18.2 0.081
P6SMB15 KWJ 13.5 16.5 1.0 12.1 1 28 22.0 0.084
P6SMB15A KXJ 14.3 15.8 1.0 12.8 1 29 21.2 0.084
P6SMB16 KYJ 14.4 17.6 1.0 12.9 1 26 23.5 0.086
P6SMB16A KZJ 15.2 16.8 1.0 13.6 1 28 22.5 0.086
P6SMB18 LDJ 16.2 19.8 1.0 14.5 1 23 26.5 0.088
P6SMB18A LEJ 17.1 18.9 1.0 15.3 1 25 25.5 0.088
P6SMB20 LFJ 18.0 22.0 1.0 16.2 1 21 29.1 0.090
P6SMB20A LGJ 19.0 21.0 1.0 17.1 1 22 27.7 0.090
P6SMB22 LHJ 19.8 24.2 1.0 17.8 1 19 31.9 0.092
P6SMB22A LKJ 20.9 23.1 1.0 18.8 1 20 30.6 0.092
P6SMB24 LLJ 21.6 26.4 1.0 19.4 1 18 34.7 0.094
P6SMB24A LMJ 22.8 25.2 1.0 20.5 1 19 33.2 0.094
P6SMB27 LNJ 24.3 29.7 1.0 21.8 1 16 39.1 0.096
P6SMB27A LPJ 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096
P6SMB30 LQJ 27.0 33.0 1.0 24.3 1 14.0 43.5 0.097
P6SMB30A LRJ 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097
P6SMB33 LSJ 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098
P6SMB33A LTJ 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098
P6SMB36 LUJ 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099
P6SMB36A LVJ 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099
P6SMB39 LWJ 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100
P6SMB39A LXJ 37.1 41.0 1.0 33.3 1 11.6 53.9 0.100
P6SMB43 LYJ 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101
P6SMB43A LZJ 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101
P6SMB47 MDJ 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101
P6SMB47A MEJ 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101
P6SMB51 MFJ 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102
P6SMB51A MGJ 48.5 53.6 1.0 43.6 1 8.9 70.1 0.102
Document Number: DS_D1405062 Version: J14
P6SMB SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
Breakdown Voltage
V
BR
(V)
(Note 1)
CREAT BY ART
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltag
e
Temperature
I
T
V
WM
@ V
WM
Current I
RSM
@ I
PPM
Coefficient
Min Max (mA) (V) I
D
(uA) (A) (Note 2) Vc(V) of V
BR
(%/℃)
P6SMB56 MHJ 50.4 61.6 1.0 45.4 1 7.8 80.5 0.103
P6SMB56A MKJ 53.2 58.8 1.0 47.8 1 8.1 77.0 0.103
P6SMB62 MLJ 55.8 68.2 1.0 50.2 1 7.0 89.0 0.104
P6SMB62A MMJ 58.9 65.1 1.0 53.0 1 7.4 85.0 0.104
P6SMB68 MNJ 61.2 74.8 1.0 55.1 1 6.4 98.0 0.104
P6SMB68A MPJ 64.6 71.4 1.0 58.1 1 6.8 92.0 0.104
P6SMB75 MQJ 67.5 82.5 1.0 60.7 1 5.8 108 0.105
P6SMB75A MRJ 71.3 78.8 1.0 64.1 1 6.1 103 0.105
P6SMB82 MSJ 73.8 90.2 1.0 66.4 1 5.3 118 0.105
P6SMB82A MTJ 77.9 86.1 1.0 70.1 1 5.5 113 0.105
P6SMB91 MUJ 81.9 100 1.0 73.7 1 4.8 131 0.106
P6SMB91A MVJ 86.5 95.5 1.0 77.8 1 5.0 125 0.106
P6SMB100 MWJ 90 110 1.0 81.0 1 4.3 144 0.106
P6SMB100A MXJ 95 105 1.0 85.5 1 4.5 137 0.106
P6SMB110 MYJ 99 121 1.0 89.2 1 3.9 158 0.107
P6SMB110A MZJ 105 116 1.0 94.0 1 4.1 152 0.107
P6SMB120 NDJ 108 132 1.0 97.2 1 3.6 173 0.107
P6SMB120A NEJ 114 126 1.0 102.0 1 3.8 165 0.107
P6SMB130 NFJ 117 143 1.0 105.0 1 3.3 187 0.107
P6SMB130A NGJ 124 137 1.0 111.0 1 3.5 179 0.107
P6SMB150 NHJ 135 165 1.0 121.0 1 2.9 215 0.108
P6SMB150A NKJ 143 158 1.0 128.0 1 3.0 207 0.108
P6SMB160 NLJ 144 176 1.0 130.0 1 2.7 230 0.108
P6SMB160A NMJ 152 168 1.0 136.0 1 2.8 219 0.108
P6SMB170 NNJ 153 187 1.0 138.0 1 2.5 244 0.108
P6SMB170A NPJ 162 179 1.0 145.0 1 2.6 234 0.108
P6SMB180 NQJ 162 198 1.0 146.0 1 2.4 258 0.108
P6SMB180A NRJ 171 189 1.0 154.0 1 2.5 246 0.108
P6SMB200 NSJ 180 220 1.0 162.0 1 2.1 287 0.108
P6SMB200A NTJ 190 210 1.0 171.0 1 2.2 274 0.108
P6SMB220 NUJ 198 242 1.0 175.0 1 1.8 342 0.108
P6SMB220A NVJ 209 231 1.0 185.0 1 1.9 328 0.108
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 through P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
Document Number: DS_D1405062 Version: J14
Device
Device
Marking
Code
Breakdown Voltage
V
BR
(V)
(Note 1)
P6SMB SERIES
Taiwan Semiconductor
Min Max Min Max
A 1.95 2.10 0.077 0.083
B 4.25 4.75 0.167 0.187
C 3.48 3.73 0.137 0.147
D 1.99 2.61 0.078 0.103
E 0.90 1.41 0.035 0.056
F 5.10 5.30 0.201 0.209
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Device Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405062 Version: J14
P6SMB SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
A 2.3 0.091
B 2.5 0.098
C 4.3 0.169
MARKING DIAGRAM
D 1.8 0.071
E 6.8 0.268
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405062 Version: J14
P6SMB SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
