TPCP8303
2010-01-14
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
TPCP8303
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS −20 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V
Gate-source voltage VGSS ±8 V
DC (Note 1) ID −3.8
Drain current Pulse (Note 1) IDP −15.2 A
Single-device operation
(Note 3a)
PD (1) 1.48
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) PD (2) 1.23
Single-device operation
(Note 3a)
PD (1) 0.58
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) PD (2) 0.36
W
Single-pulse avalanche energy (Note 4) EAS 18.8 mJ
Avalanche current IAR −3.8 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.04 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Marking
Configuration (Note 6)
Unit: mm
1. Source1 5. Drain2
2. Gate1 6. Drain2
3. Source2 7. Drain1
4. Gate2 8. Drain1
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-3V1G
Weight: 0.017 g (typ.)
0.33±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
2.4±0.1
0.475
0.65
2.8±0.1
A
0.05 M
2.9±0.1
41
5
8
0.8±0.05
0.17±0.02
BB
0.05 M
A
S
0.025
S
1.12
+0.13
-0.12
0.28
+0.1
-0.11
8303
1 2 3 4
8 7 6 5
Lot No.
1 2 3 4
8 7 6 5
Start of commercial production
2009-05
TPCP8303
2010-01-14
2
Thermal Characteristics
Characteristic Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 84.5
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 101.6
°C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 215.5
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 347.2
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: VDD = −16 V, Tch = 25°C (initial), L = 1 mH, RG = 1 Ω, IAR = −3.8 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
25.4
25.4
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
TPCP8303
2010-01-14
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA
Drain cutoff current IDSS V
DS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = −10 mA, VGS = 8 V −12 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = −10 V, ID = −1 mA −0.3 ⎯ −1.0 V
RDS (ON) V
GS = −1.5 V, ID = −0.3 A ⎯ 85 144
RDS (ON) V
GS = −1.8 V, ID = −1.0 A ⎯ 66 90
RDS (ON) V
GS = −2.5 V, ID = −1.9 A ⎯ 52 60
Drain-source ON-resistance
RDS (ON) V
GS = −4.5 V, ID = −1.9 A ⎯ 41 46
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.9 A 6 12 ⎯ S
Input capacitance Ciss ⎯ 640 ⎯
Reverse transfer capacitance Crss ⎯ 100 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 140 ⎯
pF
Rise time tr ⎯ 12 ⎯
Turn-on time ton ⎯ 20 ⎯
Fall time tf ⎯ 43 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 138 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 10 ⎯
Gate-source charge1 Qgs1 ⎯ 1.6 ⎯
Gate-drain (“Miller”) charge Qgd
VDD ≈ −16 V, VGS = −5 V,
ID = −3.8 A
⎯ 2.1 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −15.2 A
Forward voltage (diode) VDSF IDR = −3.8 A, VGS = 0 V ⎯ ⎯ 1.2 V
RL = 5.3 Ω
VDD ≈ −10 V
−5V
VGS
0V
4.7 Ω
ID = −1.9 A
OUT
TPCP8303
2010-01-14
4
VGS = −1.5 V
−2.5
−4.5
10
1000
100
−0.1 −1−10
−1.8
−100
Ta = −55°C
25
100
0.1
10
100
−0.1 −1 −100
1
−10
−8
−0.3
ID = −1.9 A
−1
0
−0.2
−0.3
−0.4
−0.5
0−2−4−6
−0.1
−0.8 −1.2 −2.0
Ta = −55°C
100
25
0
−4
−6
−10
0 −0.4
−8
−2
−1.6
−1.6 −2.0
−1.6
−10
−
6
−3 −2.5
−2
−1.4
−1.8
VGS = −1.2V
−
4
−2.2
0−0.4 −0.8 −1.2
0
−4
−8
−12
−16
−20
−0.8 −1.0
−
3
−1.8
VGS = −1.2 V
−10 −2
−2.2
−1.6
−1.4
0 −0.2 −0.4 −0.6
0
−2
−4
−6
−8
−10
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Common source
Ta = 25°C
Pulse test
Common
source
Ta = 25°C
Pulse test
Common source
VDS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = −10 V
Pulse test
Common
source
Ta = 25°C
Pulse test
Forward transfer admittance
|Yfs| (S)
Drain−source voltage VDS (V)
Drain−source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate−source voltage VGS (V)
Drain current ID (A)
Gate
−
source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain−source ON-resistance
RDS (ON) (mΩ)
−4
−6
−2.5
TPCP8303
2010-01-14
5
20
VDS
VDD = −16 V
VGS
−4
−8
0 4 12
0
−2
−6
−8
−10
0
−4
−8
−12
−20
−16
−4
816
−80 −40 0 40 80 160120
0
−0.8
−0.6
−0.2
−0.4
Ciss
Coss
Crss
100
10000
10
−0.1 −1 −10 −100
1000
−1.5
−4.5
−1
VGS = 0 V
−2.5
0−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
−0.1
−100
−1
−10
−1.8
VGS = −1.5 V
−2.5
−4.5
ID = −0.3 A
ID = −0.38, −1.9, −3.8, −7.6 A
−1.9, −3.8
0
20
40
60
80
100
−80 −40 0 40 80 120 160
−1.8
120
−1
(1)
(4)
(3)
(2)
RDS (ON) – Ta
IDR – VDS
Vth – Ta
PD – Ta
Common source
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
0
0.5
1
1.5
2
0 40 80 160 120 200
Common source
VDS = −10 V
ID = −1mA
Pulse test
Common source
ID = −3.8 A
Ta = 25°C
Pulse test
Ambient temperature Ta (°C)
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain
−
source voltage VDS (V)
Drain reverse current IDR (A)
Drain−source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Drain power dissipation PD (W)
Gate−source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain−source voltage VDS (V)
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 5 s
TPCP8303
2010-01-14
6
10 ms *
t = 1 ms *
VDSS max
−0.1 −1 −10 −100
−0.1
−1
−10
−100
(1)
(2)
(3)
(4)
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
rth − tw
Single pulse
Pulse width tw (s)
Drain−source voltage VDS (V)
Transient thermal impedance
r
th (°C/W)
Drain current ID (A)
Safe operating area
ID max (Pulse) *
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
TPCP8303
2010-01-14
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
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FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
