1
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryDataIGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C
Tvj = -25°C VCES 3300
3300 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC400
660 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 4,80 kW
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V VCE sat
3,40
4,30
4,25
5,00
V
V
Tvj = 25°C
Tvj = 125°C
栅极阈值电压
Gatethresholdvoltage IC = 40,0 mA, VCE = VGE, Tvj = 25°C VGEth 4,2 5,1 6,0 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V, VCE = 1800V QG8,00 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 1,3 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 50,0 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 2,70 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
td on
0,28
0,28
µs
µs
Tvj = 25°C
Tvj = 125°C
上升时间(电感负载)
Risetime,inductiveload IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
tr
0,18
0,20
µs
µs
Tvj = 25°C
Tvj = 125°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
td off
1,55
1,70
µs
µs
Tvj = 25°C
Tvj = 125°C
下降时间(电感负载)
Falltime,inductiveload IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
tf
0,20
0,20
µs
µs
Tvj = 25°C
Tvj = 125°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
Eon
470
730
mJ
mJ
Tvj = 25°C
Tvj = 125°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
Eoff
430
510
mJ
mJ
Tvj = 25°C
Tvj = 125°C
短路数据
SCdata VGE ≤ 15 V, VCC = 2500 V
VCEmax = VCES -LsCE ·di/dt ISC
2000
A
Tvj = 125°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 26,0 K/kW
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 12,0 K/kW
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
2
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C
Tvj = -25°C VRRM 3300
3300 V
连续正向直流电流
ContinuousDCforwardcurrent IF400 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 800 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 55,5 kA²s
最大损耗功率
Maximumpowerdissipation Tvj = 125°C PRQM 800 kW
最小开通时间
Minimumturn-ontime ton min 10,0 µs
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V VF
2,80
2,80
3,50
3,50
V
V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V
VGE = -15 V
IRM
550
650
A
A
Tvj = 25°C
Tvj = 125°C
恢复电荷
Recoveredcharge IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V
VGE = -15 V
Qr
235
440
µC
µC
Tvj = 25°C
Tvj = 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V
VGE = -15 V
Erec
245
515
mJ
mJ
Tvj = 25°C
Tvj = 125°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 51,0 K/kW
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 24,0 K/kW
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
3
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
反向二极管/Diode,Reverse
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C
Tvj = -25°C VRRM 3300
3300 V
连续正向直流电流
ContinuousDCforwardcurrent IF400 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 800 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 55,5 kA²s
最大损耗功率
Maximumpowerdissipation Tvj = 125°C PRQM 800 kW
最小开通时间
Minimumturn-ontime ton min 10,0 µs
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V VF
2,80
2,80
3,50
3,50
V
V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V IRM
550
650
A
A
Tvj = 25°C
Tvj = 125°C
恢复电荷
Recoveredcharge IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V Qr
235
440
µC
µC
Tvj = 25°C
Tvj = 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C)
VR = 1800 V Erec
245
515
mJ
mJ
Tvj = 25°C
Tvj = 125°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 51,0 K/kW
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 24,0 K/kW
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
4
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 6,0 kV
局部放电停止电压
Partialdischargeextinctionvoltage RMS, f = 50 Hz, QPD ≤ 10 pC (acc. to IEC 1287) VISOL 2,6 kV
DC稳定性
DCstability Tvj = 25°C, 100 fit VCE D 1800 V
模块基板材料
Materialofmodulebaseplate AlSiC
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) AlN
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 32,2
32,2 mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 19,1
19,1 mm
相对电痕指数
Comperativetrackingindex CTI > 400
min. typ. max.
杂散电感,模块
Strayinductancemodule LsCE 25 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE'
RAA'+CC' 0,37
0,39 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm
端子联接扭距
Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
1,8
8,0
-
-
2,1
10
Nm
Nm
重量
Weight G1000 g
5
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
0
100
200
300
400
500
600
700
800
Tvj = 25°C
Tvj = 125°C
输出特性IGBT,制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
Tvj=125°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
0
100
200
300
400
500
600
700
800
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
传输特性IGBT,制动-斩波器(典型)
transfercharacteristicIGBT,Brake-Chopper(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12 13
0
100
200
300
400
500
600
700
800
Tvj = 25°C
Tvj = 125°C
开关损耗IGBT,制动-斩波器（典型)
switchinglossesIGBT,Brake-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.7Ω,RGoff=3.6Ω,VCE=1800V,CGE=68nF
IC [A]
E [mJ]
0 100 200 300 400 500 600 700 800
0
500
1000
1500
2000
2500
3000
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
6
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
开关损耗IGBT,制动-斩波器（典型)
switchinglossesIGBT,Brake-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=400A,VCE=1800V,CGE=68nF
RG [Ω]
E [mJ]
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
0
500
1000
1500
2000
2500
3000
3500
4000
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
瞬态热阻抗IGBT,制动-斩波器
transientthermalimpedanceIGBT,Brake-Chopper
ZthJC=f(t)
t [s]
ZthJC [K/kW]
0,001 0,01 0,1 1 10
0,1
1
10
100
ZthJC : IGBT
i:
ri[K/kW]:
τi[s]:
1
11,7
0,03
2
6,5
0,1
3
1,56
0,3
4
6,24
1
反偏安全工作区IGBT,制动-斩波器（RBSOA）
reversebiassafeoperatingareaIGBT,Brake-Chopper
(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=3.6Ω,Tvj=125°C,CGE=68nF
VCE [V]
IC [A]
0 500 1000 1500 2000 2500 3000 3500
0
100
200
300
400
500
600
700
800
900
IC, Modul
IC, Chip
正向偏压特性二极管，制动-斩波器（典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
100
200
300
400
500
600
700
800
Tvj = 25°C
Tvj = 125°C
7
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
开关损耗二极管，制动-斩波器（典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(IF)
RGon=2.7Ω,VCE=1800V
IF [A]
E [mJ]
0 100 200 300 400 500 600 700 800
0
100
200
300
400
500
600
700
800
Erec, Tvj = 125°C
开关损耗二极管，制动-斩波器（典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(RG)
IF=400A,VCE=1800V
RG [Ω]
E [mJ]
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
0
100
200
300
400
500
600
700
800
Erec, Tvj = 125°C
瞬态热阻抗二极管，制动-斩波器
transientthermalimpedanceDiode,Brake-Chopper
ZthJC=f(t)
t [s]
ZthJC [K/kW]
0,001 0,01 0,1 1 10
0,1
1
10
100
ZthJC : Diode
i:
ri[K/kW]:
τi[s]:
1
22,95
0,03
2
12,75
0,1
3
3,06
0,3
4
12,24
1
安全工作区二极管，制动-斩波器(SOA)
safeoperationareaDiode,Brake-Chopper(SOA)
IR=f(VR)
Tvj=125°C
VR [V]
IR [A]
0 500 1000 1500 2000 2500 3000 3500
0
100
200
300
400
500
600
700
800
900
1000
IR, Modul
8
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
正向偏压特性反向二极管（典型)
forwardcharacteristicofDiode,Reverse(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
100
200
300
400
500
600
700
800
Tvj = 25°C
Tvj = 125°C
开关损耗反向二极管（典型)
switchinglossesDiode,Reverse(typical)
Erec=f(IF)
RGon=2.7Ω,VCE=1800V
IF [A]
E [mJ]
0 100 200 300 400 500 600 700 800
0
100
200
300
400
500
600
700
800
Erec, Tvj = 125°C
开关损耗反向二极管（典型)
switchinglossesDiode,Reverse(typical)
Erec=f(RG)
IF=400A,VCE=1800V
RG [Ω]
E [mJ]
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
0
100
200
300
400
500
600
700
800
Erec, Tvj = 125°C
瞬态热阻抗反向二极管
transientthermalimpedanceDiode,Reverse
ZthJC=f(t)
t [s]
ZthJC [K/kW]
0,001 0,01 0,1 1 10
0,1
1
10
100
ZthJC : Diode
i:
ri[K/kW]:
τi[s]:
1
22,95
0,03
2
12,75
0,1
3
3,06
0,3
4
12,24
1
9
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
安全工作区反向二极管(SOA)
safeoperationareaDiode,Reverse(SOA)
IR=f(VR)
Tvj=125°C
VR [V]
IR [A]
0 500 1000 1500 2000 2500 3000 3500
0
100
200
300
400
500
600
700
800
900
1000
IR, Modul
10
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
11
技术信息/TechnicalInformation
FD400R33KF2C-K
IGBT-模块
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.2
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询
www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。
请注意，对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货
如果有必要，请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
FD400R33KF2C-K