/TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData IGBT,-/IGBT,Brake-Chopper /MaximumRatedValues Collector-emittervoltage Tvj = 25C Tvj = -25C VCES 3300 3300 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 400 660 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A Totalpowerdissipation TC = 25C, Tvj max = 150C Ptot 4,80 kW Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. A A typ. max. 3,40 4,30 4,25 5,00 V V 4,2 5,1 6,0 V QG 8,00 C Tvj = 25C RGint 1,3 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 50,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,70 nF - Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Gatethresholdvoltage IC = 40,0 mA, VCE = VGE, Tvj = 25C VGEth Gatecharge VGE = -15 V ... +15 V, VCE = 1800V Internalgateresistor Tvj = 25C Tvj = 125C VCE sat () Turn-ondelaytime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGon = 2,7 , CGE = 68,0 nF Tvj = 25C Tvj = 125C td on 0,28 0,28 s s () Risetime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGon = 2,7 , CGE = 68,0 nF Tvj = 25C Tvj = 125C tr 0,18 0,20 s s () Turn-offdelaytime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGoff = 3,6 , CGE = 68,0 nF Tvj = 25C Tvj = 125C td off 1,55 1,70 s s () Falltime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGoff = 3,6 , CGE = 68,0 nF Tvj = 25C Tvj = 125C tf 0,20 0,20 s s () Turn-onenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = 15 V RGon = 2,7 , CGE = 68,0 nF Tvj = 25C Tvj = 125C Eon 470 730 mJ mJ ( Turn-offenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = 15 V RGoff = 3,6 , CGE = 68,0 nF Tvj = 25C Tvj = 125C Eoff 430 510 mJ mJ SCdata VGE 15 V, VCC = 2500 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 12,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 1 tP 10 s, Tvj = 125C 2000 A 26,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData -/Diode,Brake-Chopper /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C Tvj = -25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C Maximumpowerdissipation Minimumturn-ontime VRRM 3300 3300 V IF 400 A IFRM 800 A It 55,5 kAs Tvj = 125C PRQM 800 kW ton min 10,0 s /CharacteristicValues min. typ. max. 2,80 2,80 3,50 3,50 V V 550 650 A A Qr 235 440 C C IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V Erec 245 515 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 24,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V IRM Recoveredcharge IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V Reverserecoveryenergy 2 51,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData /Diode,Reverse /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C Tvj = -25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C Maximumpowerdissipation Minimumturn-ontime VRRM 3300 3300 V IF 400 A IFRM 800 A It 55,5 kAs Tvj = 125C PRQM 800 kW ton min 10,0 s /CharacteristicValues min. typ. max. 2,80 2,80 3,50 3,50 V V 550 650 A A Qr 235 440 C C IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C Erec 245 515 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 24,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Peakreverserecoverycurrent IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C IRM Recoveredcharge IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C Reverserecoveryenergy Tvj = 25C Tvj = 125C 3 VF 51,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 6,0 kV Partialdischargeextinctionvoltage RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287) VISOL 2,6 kV DC DCstability Tvj = 25C, 100 fit VCE D 1800 V Materialofmodulebaseplate AlSiC Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) AlN Creepagedistance -/terminaltoheatsink -/terminaltoterminal 32,2 32,2 mm Clearance -/terminaltoheatsink -/terminaltoterminal 19,1 19,1 mm Comperativetrackingindex CTI > 400 min. typ. max. LsCE 25 nH RCC'+EE' RAA'+CC' 0,37 0,39 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote 1,8 - 2,1 Nm M 8,0 - 10 Nm Weight G 1000 g preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting Terminalconnectiontorque 4 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData IGBT,-) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V IGBT,-) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) Tvj=125C 800 800 Tvj = 25C Tvj = 125C 700 600 600 500 500 IC [A] IC [A] 700 400 400 300 300 200 200 100 100 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] IGBT,-() transfercharacteristicIGBT,Brake-Chopper(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] IGBT,-) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=2.7,RGoff=3.6,VCE=1800V,CGE=68nF 800 3000 Tvj = 25C Tvj = 125C 700 Eon, Tvj = 125C Eoff, Tvj = 125C 2500 600 2000 E [mJ] IC [A] 500 400 1500 300 1000 200 500 100 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 5 0 100 200 300 400 IC [A] 500 600 700 800 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData IGBT,-) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=400A,VCE=1800V,CGE=68nF IGBT,- transientthermalimpedanceIGBT,Brake-Chopper ZthJC=f(t) 4000 100 Eon, Tvj = 125C Eoff, Tvj = 125C 3500 ZthJC : IGBT 3000 10 E [mJ] ZthJC [K/kW] 2500 2000 1500 1 1000 i: 1 2 3 4 ri[K/kW]: 11,7 6,5 1,56 6,24 i[s]: 0,03 0,1 0,3 1 500 0 0,1 0,001 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 RG [] IGBT,-RBSOA reversebiassafeoperatingareaIGBT,Brake-Chopper (RBSOA) IC=f(VCE) VGE=15V,RGoff=3.6,Tvj=125C,CGE=68nF 900 IC, Modul IC, Chip 800 0,01 0,1 t [s] 1 10 -) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 800 Tvj = 25C Tvj = 125C 700 700 600 600 500 IF [A] IC [A] 500 400 400 300 300 200 200 100 100 0 0 500 1000 1500 2000 VCE [V] 2500 3000 0 3500 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 6 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 4,0 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData -) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=2.7,VCE=1800V -) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=400A,VCE=1800V 800 800 Erec, Tvj = 125C 700 700 600 600 500 500 E [mJ] E [mJ] Erec, Tvj = 125C 400 400 300 300 200 200 100 100 0 0 100 200 300 400 IF [A] 500 600 700 0 800 - transientthermalimpedanceDiode,Brake-Chopper ZthJC=f(t) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 RG [] -(SOA) safeoperationareaDiode,Brake-Chopper(SOA) IR=f(VR) Tvj=125C 100 1000 ZthJC : Diode IR, Modul 900 800 700 10 IR [A] ZthJC [K/kW] 600 500 400 1 300 200 i: 1 2 3 4 ri[K/kW]: 22,95 12,75 3,06 12,24 i[s]: 0,03 0,1 0,3 1 0,1 0,001 0,01 0,1 t [s] 1 100 0 10 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 7 0 500 1000 1500 2000 VR [V] 2500 3000 3500 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData ) forwardcharacteristicofDiode,Reverse(typical) IF=f(VF) ) switchinglossesDiode,Reverse(typical) Erec=f(IF) RGon=2.7,VCE=1800V 800 800 Tvj = 25C Tvj = 125C 700 600 600 500 500 E [mJ] IF [A] 700 Erec, Tvj = 125C 400 400 300 300 200 200 100 100 0 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 0 4,0 ) switchinglossesDiode,Reverse(typical) Erec=f(RG) IF=400A,VCE=1800V 0 100 200 300 400 IF [A] 500 600 700 800 transientthermalimpedanceDiode,Reverse ZthJC=f(t) 800 100 Erec, Tvj = 125C ZthJC : Diode 700 600 10 ZthJC [K/kW] E [mJ] 500 400 300 1 200 i: 1 2 3 4 ri[K/kW]: 22,95 12,75 3,06 12,24 i[s]: 0,03 0,1 0,3 1 100 0 0,1 0,001 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 RG [] preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 8 0,01 0,1 t [s] 1 10 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData (SOA) safeoperationareaDiode,Reverse(SOA) IR=f(VR) Tvj=125C 1000 IR, Modul 900 800 700 IR [A] 600 500 400 300 200 100 0 0 500 1000 1500 2000 VR [V] 2500 3000 3500 preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 9 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:SB dateofpublication:2013-11-25 approvedby:DTS revision:2.2 10 /TechnicalInformation IGBT- IGBT-modules FD400R33KF2C-K PreliminaryData www.infineon.com - 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