MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . .. dasigned for general-purpose amplifier and low-speed switching applications. High DC Current Gain - - hFE = 2500 (Typ) @ Ig = 4.0 Ade Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vde (Min) - BDX53B, 54B = 100 Vde (Min} BDX536, 54C Low Collector-Emitter Saturation Voltage VCE (sat) = 2.0 Vde (Max) @ Ic = 3. = 4,0 Vde (Max) @ Io =5. 0 Ade 0 Ade e Monolithic Construction with Built-In BaseEmitter Shunt Resistors TO-220AB Compact Package MAXIMUM RATINGS NPN BDX53B BDX53C PNP BDX54B BDX54C *Motorola Preferred Device DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS _ 80-100 VOLTS 65 WATTS CASE 221A-06 TO-220AB : BDX&3B BDX53C Rating Symbol | BDX54B BDX54C Unit CollectorEmitter Voltage VCEO 80 100 Vde CollectorBase Voltage Vos 80 100 Vdc Emitter-Base Voltage VeB 5.0 Vde Collector Current Continuous Io 8.0 Ade Peak 12 Base Current IB 0.2 Adc Total Device Dissipation @ Tc = 25C Pp 60 Watts Derate above 25C 0.48 WiC Operating and Storage Junction Ty Tstg -65 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Raja 70 CAV Thermal Resistance, Junction to Case Rec 70 CW Ta To 40 Bw o & Qo _ Qa nm o Pp, POWER DISSIPATION (WATTS) REV 7 Motorola BipolaPower Transistor Device @ o & Data 4 60 80 T, TEMPERATURE (C) 120 Figure 1. Power Derating 3-221 BDX53B BDX53C BDX54B BDX54c ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol | Min | Max Unit | OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (1) VCEC\(sus) Vde (Ig = 100 mAde, ip = 0) BDX53B, BDX54B 80 _ BDX83C, BDX&4C 100 _ Collector Cutoff Current ICEO mAdc (VCE = 40 Vdo, Ip = 0) BDX3B, BDX54B _ 0.5 (VCE = 50 Vde, Ip = 0) BDX53C, BDX54C _ 0.5 Collector Cutoff Current IcBO mAdc (Vcp = 80 Vd, IE = 0) BDX53B, BDX548 _ 0.2 (VoB = 100 Vdo, IE = 0) BDX53C, BDX540 _~ 0.2 ON CHARACTERISTICS (1) DC Current Gain RFE 750 _ _ (Io = 3.0 Ado, Voge = 3.0 Vde) Collector-Emitter Saturation Voltage VCE(sat) Vde (Ic = 3.0 Ade, Ip = 12 mAdc} - 2.0 4.0 BaseEmitter Saturation Voltage VBE(sat) _ 2.5 Vde (Ic = 3.0 Ade, Io = 12 mA) DYNAMIC CHARACTERISTICS Small-Signal Current Gain fe 4.0 _ _ (Ic = 3.0 Ade, VoE = 4.0 Vde, f = 1.0 MHz) Output Capacitance : Cob pF (Vop = 10 Vde, Ie = 0, f= 0.1 MHz) BDX53B, 53C _ 300 BDX54B, 54C _ 200 (1) Pulse Test: Pulse Width = 300 ps, Duty Cycle = 2%, 5.0 V Rg AND Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS ay 3.0 Dy MUST BE FAST RECOVERY TYPES, eg.: 20 1N5825 USED ABOVE Ip ~ 100 mA } MSD6100 USED BELOW Ip = 100 mA SCOPE 10 ' mp Coes? Sor 2 uy = 0.5 me Debate ot Es no ante FL [ean | eo) | 0 t Low eS os 0.2 Voc = 380 V V4 +4.0V = a iis = 250 APPROX fF Bi = Be ; 12V 1 25 us for tg and ty, Dy is disconnected ae Ty = 25C @ =0V = 05 tps 10ns and V2 = 0 01 8602 03 0507 10 20 30 6070 10 DUTY CYCLE = 1.0% Figure 2. Switching Time Test Circuit For NPN test circuit reverse all polarities Ic, COLLECTOR CURRENT (AMP} Figure 3. Switching Times 3-222 Motorola Bipolar Power Transistor Device Data BDX53B BDX53C BDX54B BDX54C 1.0 _ G07 a 05 fe 5 0.3 2 rr 0.2 EE o. Rect = (0 Rac Ht & 0.07 Rae = 1.92C/W ti = 0.05 =: DCURVES APPLY FOR POWER eg 0.08 Le he | SINGLE PULSE TRAIN SHOWN wi 6.01 SINGLE PULSE tg PULSE READ TIME AT ty F 0.02 DUTY CYCLE, D=tytg Tipe) Te = Pipky Reuctt ad 7 0.02 0.03 0.05 0.1 02 03 05 1.0 20 30 5.0 10 20 30 50 100 = 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 4. Therma! Response 20 7 oe oe : 10 There are two limitations on the power handling ability of a = _ transistor average junction temperature and second break- = 5.0 50ms _ down. Safe operating area curves indicate Io VcE limits of & 20 | 1.0 ms de the transistor that must be observed for reliable operation, a Ty = 180C Le., the transistor must not be subjected to greater dissipa- B10 ~~ BONDING WIRE LIMITED __tion than the curves indicate. = ee 06F THERMALLY LIMITED @ Tg = 25C The data of Figure 5 is based on Tutplo = 150C; Tc Is 5 SECON BREA OWN LIMITED variable depending on conditions. Second breakdown pulse 0.2 CURVES APPLY BELOW RATED V limits are valid for duty cycles to 10% provided TJ(pk) 01 CEO < 150C. Ty(pk) may be calculated from the data in Fig- 0085 -- ure 4, At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the 0.02 BDX58C, BDXS4C limitations imposed by second breakdown. 1.0 20 30 50 7.0 10 20 30 680 670 100 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS} - Figure 5. Active-Region Safe Operating Area 10,000 300 z 5000 Ty = 425C 3 aR zy 1000 & z id 3 np z 0 0; Ee 5 300 Ty = 25C 5 Voge =3.0V = 3 100 Io=8.0A _ & 7 50 e " 50 30 ein PNP z 3 PNP NPN "0 50 100 200 500 1000 NPN 10 20 60 10 2 01 0.2 056 #10 20 60 10 20 50-100 {, FREQUENCY (kHz) Vp, REVERSE VOLTAGE (VOLTS) Figure 6. Small-Signal Current Gain Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3-223 BDX53B BDX53C BDX54B BDX54C NPN PNP BDX5SB, 53C - BDX54B, 54C 20,000 20,000 J - 10,000 10,000 z z= & 5000 g 5000 F- Ty = 180C z 3000 i 3000 & 2000 = 2000 25C 3 000 3 +000 E 500 500 300 300 200 200 0.1 02 03 O58 07 10 20 30 607.0 10 Of O02 08 0507 10 20 30 50 70 10 Ig, COLLECTOR CURRENT (AMP) Ig, COLLECTOR CURRENT (AMP) Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 a 3.0 Ww 26 g 2.8 3 2.2 fi 22 a 1.8 18 1.4 4 1.4 8 tu 10 F 19 03 05 07 1.0 20 30 50 7.0 10 20 30 03 05 07 1.0 20 30 50 70 10 20 30 lp, BASE CURRENT (mA) Ip, BASE CURRENT (mA) Figure 9. Collector Saturation Region 3.0 3.0 Ty=25C 25 25 3 2.0 Ww 2.0 = 18 @ Ic/lp = 250 S 15 Vee @ Vee =4.0V to VBE @ Voce =4.0V 10 @ Icilp = 250 i @ Icilp = 250 , @ Iolip = 250 0.5 0.5 0. 0203 05 07 1.0 20 30 5.0 7.0 10 O01 02 03 O5 OF 10 20 30 60 7.0 10 Ic, COLLECTOR CURRENT (AMP) Ic, COLLECTOR CURRENT (AMP) Figure 10. On Voltages 3-224 Motorola Bipolar Power Transistor Device Data BDX53B BDX53C BDX54B BDX54C NPN PNP BDX53B, BDX53G BDX54B, BDX54C __ +50 _ +50 - 9 = +4.0 loll < hreya = +4.0 Io/lg < hee iS +3.0 - +30 & .20 25C to 150C Gi 42.0 25C to 150C t 44.0 i +1.0 8 55C to 25C 8 55C to 25C Ww 0 a 0 5 -10 *Byc for 5 -1.0 *Oyc for & 20 -20 a, a, ai 3.0 Gye for VBE fi 3.0 yp for VBE 3 740 55 to 150C z 40 55 fo 150C 5.0 oi 0203 O05 07 10 20 30 50 7.0 10 50 0.1 02.03 05 07 1.0 20 30 50 7.0 10 ig, COLLECTOR CURRENT (AMP) Ig, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 108 REVERSE FORWARD REVERSE FORWARD = 10' = 104 ~ Vege =30V z VoE = 30V a 103 zi 108 = -& 3 3 & 102 g (2 5 Ty = 150C 6 Ty = 150C ; 101 ; 701 = 100C S 490 100% S 100 25C tol ly 10-1 + + + + + + $14 +06 +04 +402 0 -02 -0.4 -0.6 -08 -10 -12 -14 Vpe, BASE-EMITTER VOLTAGE (VOLTS) Vpe, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region NPN COLLECTOR PNP . COLLECTOR BDX93B BDX548 BDX53C ---rcr- = BOXHG pee _4 | | | | | BASE | | | | | i | | L__ _ .. ee 4 Oo EMITTER EMITTER Figure 13. Darlington Schematic 3-225 Motorola Bipolar Power Transistor Device Data