RECTRON SEMICONDUCTOR MMBT3904LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) 0.118(3.000) 0.110(2.800) Ratings at 25 o C ambient temperature unless otherwise specified. Dimensions in inches and (millimeters) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ -55 to +150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1.Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R JA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 10Adc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 100Adc, I C = 0) V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 40 - (I C = 1.0mAdc, V CE = 1.0Vdc) 70 - Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) ON CHARACTERISTICS(2) (I C = 10mAdc, V CE = 1.0Vdc) hFE 100 300 (I C = 50mAdc, V CE = 1.0Vdc) 60 - (I C = 100mAdc, V CE = 1.0Vdc) 30 - - 0.2 - 0.3 0.65 0.85 - 0.95 fT 300 - MHz Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Cobo - 4.0 pF Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 8.0 pF Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hie 1.0 10 kohms Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hre 0.5 8.0 X 10-4 Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hfe 100 400 - Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hoe 1.0 40 mhos Noise Figure (V CE = 5.0Vdc, I C = 100Adc, R S = 1.0kohms, f= 1.0kHz) NF - 5.0 dB td - 35 tr - 35 ts - 200 tf - 50 Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) VCE(sat) (I C = 50mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) Vdc VBE(sat) (I C = 50mAdc, I B = 5.0mAdc) - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc) Rise Time Storage Time (V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc) Fall Time ns ns <300s,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 ) O - TJ= 25 C -- 10 5000 VCC=40V IC=IB =10 3000 7.0 2000 5.0 Q, CHARGE (pC) CAPACITANCE(PF) O TJ=125 C Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 100 70 50 1.0 0.1 0.2 0.3 0.5 0.7 1.0 20 30 40 2.0 3.0 5.0 7.0 10 1.0 2.0 3.0 REVERSE BIAS VOLTAGE( VOLTS) 20 30 50 70 100 200 Figure 2. Charge Data Figure 1. Capacitance 500 500 IC/IB =10 100 70 tr@VCC=3.0V 50 30 20 VCC=40V IC=IB=10 300 200 tr, RISE TIME (ns) 300 200 TIME (ns) 5.0 7.0 10 IC,COLLECTOR CURRENT(mA) 40V 100 70 50 30 20 15V 10 10 7 5 2.0V td@VOB=0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 7 5 200 1.0 2.0 3.0 IC,COLLECTOR CURRENT(mA) Figure 3. Turn-On Time 50 70 100 200 500 300 200 IC/IB =20 t's=ts-1/8tf IB1=IB2 IC/IB =10 100 70 IC/IB =20 50 IC/IB =10 30 20 VCC=40V IB1=IB2 300 200 tf, FALL TIME (ns) t's, STORAGE TIME (ns) 20 30 Figure 4. Rise Time 500 IC/IB =20 100 70 50 IC/IB =10 30 20 10 10 7 5 5.0 7.0 10 IC,COLLECTOR CURRENT(mA) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 5. Storage Time Figure 6. Fall Time 200 RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 ) 14 SOURCE RESISTANCE=200 IC=1.0mA 10 f = 1.0 kHz SOURCE RESISTANCE=200 IC=0.5mA 8 6 SOURCE RESISTANCE=1.0k IC= 50A 4 2 0 0.1 SOURCE RESISTANCE=500 IC= 100A 0.2 0.4 1.0 2.0 IC=1.0mA 12 NF,NOISE FIGURE(dB) NF,NOISE FIGURE(dB) 12 IC=0.5mA 10 IC= 50A 8 IC= 100A 6 4 2 4.0 10 20 40 0 100 0.1 f,FREQUENCY (KHz) 0.2 0.4 1.0 Figure 7. hoe,OUTPUT ADMITTANCE( mhos) hfe,CURRENT GAIN 200 100 70 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 40 100 5.0 10 20 50 20 10 5 2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 9. Current Gain Figure 10. Output Admittance hre,VOLTAGE FEEDBACK RATIO (X 10-4) hie,INPUT IMPEDANCE(k OHMS) 10 100 1 10 20 10 5.0 2.0 1.0 0.5 0.2 0.1 4.0 Figure 8. 300 30 0.1 2.0 RS,SOURCE RESISTANCE(k OHMS) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 11. Input Impedance Figure 12.Voltage Feedback Ratio 10 RECTRON hFE,DC CURRENT GAIN (NORMALIZED) RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 ) 2.0 TJ=+125OC VCE =1.0V +25OC 1.0 0.7 -55OC 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC,COLLECTOR CURRENT(mA) VCE,COLLECTOR EMITTER VOLTAGE(VOLTS) Figure 13.DC Current Gain 1.0 TJ=25OC 0.8 IC=1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14.Collector Saturation Region 1.0 1.2 TJ=25OC VBE (sat) @ IC/IB=10 0.8 VBE @ VCE=1.0V 0.6 0.4 VCE (sat) @ IC/IB=10 1.0 2.0 5.0 10 20 50 100 200 O VC FOR VCE(sat) 0 O O O O -55 C TO+25 C - 0.5 -55 C TO+25 C - 1.0 O - 2.0 0 20 40 60 80 O +25 C TO+125 C VB FOR VBE(sat) - 1.5 0.2 0 O +25 C TO+125 C 0.5 COEFFICIENT(mV/5C) V,VOLTAGE(VOLTS) 1.0 100 120 140 160 180 200 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 15."ON" Voltages Figure 16.Temperature Coefficients RECTRON