Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 3 1Publication Order Number:
BCX17LT1/D
BCX17LT1, BCX18LT1, PNP
BCX19LT1, NPN
General Purpose
Transistors
(Voltage and Current are Negative
for PNP Transistors)
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BCX17LT1, BCX19LT1
BCX18LT1
VCEO 45
25
Vdc
Collector−Base Voltage
BCX17LT1, BCX19LT1
BCX18LT1
VCBO 50
30
Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxM
12
3
COLLECTOR
3
1
BASE
2
EMITTER
COLLECTOR 3
1
BASE
2 EMITTER
PNP
NPN
xx = T1, T2, or U1
M = Date Code
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) BCX17, 19
BCX18
V(BR)CEO 45
25
Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 Adc, IC = 0) BCX17, 19
BCX18
V(BR)CES 50
30
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
100
5.0 nAdc
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO 10 Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE 100
70
40
600
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) 0.62 Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) 1.2 Vdc
ORDERING INFORMATION
Device Marking Package Shipping
BCX17LT1 T1 SOT−23 3,000 Tape & Reel
BCX17LT1G T1 SOT−23
(Pb−Free) 3,000 Tape & Reel
BCX17LT3 T1 SOT−23 10,000 Tape & Reel
BCX18LT1 T2 SOT−23 3,000 Tape & Reel
BCX19LT1 U1 SOT−23 3,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
10000.1 10 100
100
1.0
VCE = 1 V
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1 11 10 100 1000
−2
−1
0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
TJ = 25°C
IC = 10 mA
TA = 25°CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
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Phone: 81−3−5773−3850
BCX17LT1/D
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