© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGE(th) IC= 250 μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C 650 μA
VGE = 0 V TJ = 125°C 5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 50 A, VGE = 15 V TJ = 25°C 2.1 2.5 V
Note 1 TJ = 125°C 1.8 V
HiPerFASTTM
IGBT with Diode
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C60A
IF110 TC= 110°C48A
ICM TC= 25°C, 1 ms 300 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ΩICM = 100 A
(RBSOA) Clamped inductive load @ VCE ≤ 600 V
PCTC= 25°C 480 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque, TO-264 1.13/10 Nm/lb.in.
Weight TO-264 10 g
PLUS247 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
G = Gate C = Collector
E = Emitter Tab = Collector
Features
•Very high frequency IGBT and
anti-parallel FRED in one package
•Square RBSOA
•High current handling capability
•MOS Gate turn-on for drive simplicity
•Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
•Switch-mode and resonant-mode
power supplies
•Uninterruptible power supplies (UPS)
•DC choppers
•AC motor speed control
•DC servo and robot drives
Advantages
•Space savings (two devices in one
package)
•Easy to mount with 1 screw
GCE
TO-264 AA
(IXGK)
DS99044B(11/05)
PLUS247
(IXGX)
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
tfi(typ) = 35 ns
(TAB)
(TAB)
IXGK 60N60C2D1
IXGX 60N60C2D1
C2-Class High Speed IGBTs
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs IC= 50 A; VCE = 10 V, Note 1 40 58 S
Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 280 pF
Cres 97 pF
Qg146 nC
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 nC
Qgc 50 nC
td(on) 18 ns
Eon 0.4 mJ
tri 25 ns
td(off) 95 150 ns
tfi 35 ns
Eoff 0.48 0.8 mJ
td(on) 18 ns
tri 25 ns
Eon 0.9 mJ
td(off) 130 ns
tfi 80 ns
Eoff 1.2 mJ
RthJC 0.26 K/W
RthCK 0.15 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
PLUS247 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXGK 60N60C2D1
IXGX 60N60C2D1
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 60 A, VGE = 0 V, 2.1 V
Note 1 TJ = 150°C 1.4
IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/μ TJ = 100°C 8.3 A
VR = 100 V
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
RthJC 0.65 K/W
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2006 IXYS All rights reserved
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Exteded Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
0246810121416
V
CE
- Volts
I
C -
Amperes
V
GE
= 15V
13V
7V
9V
11V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 100A
50A
25A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5
V
GE
- Volts
I
C -
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Sieme
n
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Inductive Switching
Energy Loss vs. Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2345678910
R
G
- Ohms
E
off
- MilliJoul
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
on
- MilliJoule
s
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 11. Inductive Turn-off
Switching Times vs. Gate Resistance
90
100
110
120
130
140
150
160
170
2345678910
R
G
- Ohms
t
f
- Nanoseco
n
120
150
180
210
240
270
300
330
360
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 25A, 50A, 100A
Fig. 9. Inductive Swiching
Energy Loss vs. Collector Current
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoul
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoule
s
E
off
E
on
- - -
-
R
G
= 2Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Inductive Swiching
Energy Loss vs. Junction Temperature
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoul
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoule
s
E
off
E
on
- - - -
R
G
= 2Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 12. Inductive Turn-off
Switching Times vs. Collector Current
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f
- Nanoseco
n
70
90
110
130
150
170
190
210
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
© 2006 IXYS All rights reserved
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 17. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volt
s
V
CE
= 300V
I
C
= 50A
I
G
= 10 mA
Fig. 18. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFa
r
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 14. Inductive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
2345678910
R
G
- Ohms
t
r
- Nanoseco
n
22
25
28
31
34
37
40
43
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-on
Switching Times vs. Collector Current
10
20
30
40
50
60
70
80
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r
- Nanoseco
n
20.0
21.5
23.0
24.5
26.0
27.5
29.0
30.5
t
d(on)
-
t
r
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 125ºC
Fig. 16. Inductive Turn-on
Switching Times vs. Junction Temperature
0
10
20
30
40
50
60
70
80
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseco
n
18
20
22
24
26
28
30
32
34
t
d(on)
-
t
r
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 13. Inductive Turn-off
Switching Times vs. Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseco
n
60
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A, 50A, 25A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 19. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
-
T
J
= 125ºC
R
G
= 10Ω
dV / dT < 10V / ns
Fig. 20. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC /
W
© 2006 IXYS All rights reserved
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
A/μs
μs
DSEP 60-06A
ZthJC
IF=120A
IF= 60A
IF= 30A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 60A
Fig. 23. Peak reverse current IRM
versus -diF/dt
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
Fig. 21. Forward current IF versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
Qr
IRM
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and
tfr versus diF/dt
IF=120A
IF= 60A
IF= 30A
tfr VFR
Fig. 27. Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.324 0.0052
2 0.125 0.0003
3 0.201 0.0385
TVJ= 25°C
TVJ=150°C
TVJ=100°C
Note: Fig. 15 through Fig. 20 show typical
values
IXGK 60N60C2D1
IXGX 60N60C2D1
Diode's Curves
