IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE(sat) C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C 60 A IF110 TC = 110C ICM TC = 25C, 1 ms SSOA VGE = 15 V, TVJ = 125C, RG = 10 (RBSOA) Clamped inductive load @ VCE 600 V PC TC = 25C 48 A 300 A ICM = 100 A 480 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1 (c) 2006 IXYS All rights reserved g g 300 C Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. = 250 A, VCE = VGE VGE(th) 10 6 3.0 TJ = 25C TJ = 125C TJ = 25C TJ = 125C 2.1 1.8 5.0 V 650 5 A mA 100 nA 2.5 V V = 600 V = 75 A = 2.5 V = 35 ns TO-264 AA (IXGK) (TAB) G C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features * Very high frequency IGBT and anti-parallel FRED in one package * Square RBSOA * High current handling capability * MOS Gate turn-on for drive simplicity * Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications * Switch-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC choppers * AC motor speed control * DC servo and robot drives Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw DS99044B(11/05) IXGK 60N60C2D1 IXGX 60N60C2D1 Symbol gfs Cies Coes Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. IC = 50 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc 58 S 3900 280 pF pF 97 pF 146 28 nC nC 50 nC td(on) 18 ns Eon 0.4 mJ 25 ns tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25C 95 IC = 50 A, VGE = 15 V 150 ns 0.8 mJ ns ns mJ ns ns mJ 35 VCE = 400 V, RG = Roff = 2.0 0.48 18 25 0.9 130 80 1.2 Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 RthJC RthCK 0.15 ns 0.26 K/W K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V trr TJ = 150C RthJC 2.1 1.4 V 8.3 A 35 ns 0.65 K/W Note 1: Pulse test, t 300 s, duty cycle 2 % Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 1. Output Characteristics @ 25C Fig. 2. Exteded Output Characteristics @ 25C 100 300 VGE = 15V 13V 11V 90 80 240 70 210 I C - Amperes I C - Amperes V GE = 15V 13V 270 60 50 9V 40 30 11V 180 150 9V 120 90 7V 20 60 10 7V 30 5V 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 2 4 6 Fig. 3. Output Characteristics @ 125C 10 12 14 16 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature 100 1.8 V GE = 15V 13V 11V 80 1.6 70 9V 60 VGE = 15V 1.7 VCE(sat) - Normalized 90 I C - Amperes 8 VCE - Volts V CE - Volts 50 7V 40 30 1.5 1.4 1.3 I C = 100A 1.2 1.1 1.0 I C = 50A 0.9 0.8 20 0.7 5V 10 I C = 25A 0.6 0.5 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 -50 3 -25 0 25 50 75 100 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.0 180 TJ = 25C 4.5 160 140 I C = 100A 50A 25A 3.5 I C - Amperes VCE - Volts 4.0 3.0 120 100 80 TJ = 125C 25C - 40C 60 2.5 40 2.0 20 1.5 0 5 6 7 8 9 10 VGE - Volts (c) 2006 IXYS All rights reserved 11 12 13 14 15 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 8. Inductive Switching Energy Loss vs. Gate Resistance Fig. 7. Transconductance 80 4.5 TJ = - 40C 70 4.0 60 4.0 I C = 100A 3.5 Eoff - MilliJoule 25C 50 125C 40 30 3.0 3.0 Eon - Eoff 2.5 --- 2.5 TJ = 125C , VGE = 15V 2.0 2.0 VCE = 400V I C = 50A 1.5 20 1.5 1.0 10 1.0 0.5 0 0.5 I C = 25A 0.0 0 20 40 60 80 100 120 140 160 180 0.0 2 200 3 4 5 Eon 2.5 VCE = 400V ---- RG = 2 , VGE = 15V 3.5 3.0 3.0 2.5 2.5 TJ = 125C 1.5 2.0 1.0 1.5 TJ = 25C 0.5 -0.5 30 40 50 60 70 80 90 Eon 0.5 0.0 0.0 100 -0.5 2.5 2.0 I C = 50A 1.0 25 35 330 75 85 95 105 115 0.0 125 210 td(off) - - - - 270 I C = 25A, 50A, 100A 240 120 180 100 150 40 120 20 9 10 RG - Ohm s test conditions, and dimensions. IXYS reserves the right to change limits, TJ = 125C 150 80 110 8 170 100 210 7 190 VCE = 400V 120 90 RG = 2 , VGE = 15V 140 t f - Nanosecon t f - Nanosecon 65 - Nanoseconds td(off) - Nanoseconds td(off) 140 6 55 tf 300 5 45 160 td(off) - - - - 4 0.5 I C = 25A Fig. 12. Inductive Turn-off Switching Times vs. Collector Current TJ = 125C, VGE = 15V 3 1.5 TJ - Degrees Centigrade VCE = 400V 2 3.0 1.0 360 130 3.5 1.5 0.5 170 150 I C = 100A VCE = 400V Fig. 11. Inductive Turn-off Switching Times vs. Gate Resistance 160 ---- RG = 2 , VGE = 15V IC - Amperes tf 10 4.0 Eoff 2.0 1.0 0.0 20 9 Eon - MilliJoules Eon - MilliJoules 2.0 8 3.5 4.0 Eoff - MilliJoule 3.5 Eoff 7 Fig. 10. Inductive Swiching Energy Loss vs. Junction Temperature Fig. 9. Inductive Swiching Energy Loss vs. Collector Current 3.0 6 RG - Ohms IC - Amperes Eoff - MilliJoule 3.5 Eon - MilliJoules gf s - Siemen 4.5 130 60 110 TJ = 25C 90 20 30 40 50 60 IC - Amperes 70 80 90 70 100 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 13. Inductive Turn-off Switching Times vs. Junction Temperature 160 Fig. 14. Inductive Turn-on Switching Times vs. Gate Resistance 140 200 140 43 TJ = 125C, VGE = 15V 120 180 RG = 2 , VGE = 15V 100 140 80 120 100 t r - Nanosecon t f - Nanosecon I C = 100A, 50A, 25A I C = 100A 80 40 40 80 20 60 125 0 55 65 75 85 95 105 115 31 I C = 50A 100 45 34 60 60 20 37 28 25 I C = 25A 22 2 3 4 5 Fig. 15. Inductive Turn-on Switching Times vs. Collector Current 70 TJ = 25C, 125C RG = 2 , VGE = 15V 30.5 80 29.0 70 26.0 40 24.5 26 22 0 90 28 20 20.0 100 80 I C = 25A 25 35 45 20 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade IC - Amperes Fig. 17. Gate Charge Fig. 18. Capacitance 10,000 16 VCE = 300V 14 Cies I C = 50A Capacitance - PicoFar I G = 10 mA 12 VGE- Volts 30 24 10 70 I C = 100A VCE = 400V 30 21.5 60 32 RG = 2 , VGE = 15V I C = 50A 20 10 td(on) - - - - tr 40 23.0 50 10 50 30 40 9 34 60 t r - Nanosecon 50 30 8 td(on) - 27.5 td(on) - t r - Nanosecon VCE = 400V 60 20 7 Fig. 16. Inductive Turn-on Switching Times vs. Junction Temperature 80 td(on) - - - - 6 RG - Ohms TJ - Degrees Centigrade tr td(on) - Nanoseconds 160 - Nanoseconds td(off) 120 35 40 VCE = 400V VCE = 400V 25 td(on) - - - - tr td(off) - - - - tf 10 8 6 1,000 Coes 100 4 Cres 2 f = 1 MHz 10 0 0 20 40 60 80 100 QG - NanoCoulombs (c) 2006 IXYS All rights reserved 120 140 160 0 5 10 15 20 VCE - Volts 25 30 35 40 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 20. Maximum Transient Thermal Resistance Fig. 19. Reverse-Bias Safe Operating Area 110 1.00 100 90 R(th)JC- C / W IC - 80 70 60 0.10 50 40 30 TJ = 125C 20 RG = 10 dV / dT < 10V / ns 10 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGK 60N60C2D1 IXGX 60N60C2D1 Diode's Curves 160 A 140 IF 4000 nC 120 60 IF=120A IF= 60A IF= 30A Qr TVJ=100C 80 TVJ= 100C VR = 300V A 3000 TVJ= 25C 100 80 TVJ= 100C VR = 300V IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150C 60 40 20 0 0 1 2 0 100 V 0 A/s 1000 -diF/dt VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100C VR = 300V ns 130 trr 1.5 Kf 200 400 600 A/s 800 1000 -diF/dt Fig. 23. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 s tfr 1.2 tfr 120 IF=120A IF= 60A IF= 30A 110 1.0 0 VFR 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 C 160 0 0 TVJ 200 400 600 800 1000 A/s 0 200 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 0.0 600 A/s 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 ZthJC 1 2 3 0.01 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 Note: Fig. 15 through Fig. 20 show typical values 0.001 0.0001 0.00001 TVJ= 100C IF = 60A DSEP 60-06A 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction to case (c) 2006 IXYS All rights reserved 0.1 s t 1