MMA20312BT1
1
RF Device Data
Freescale Semiconductor, Inc.
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
designed for use as a linear driver amplifier in wireless base station applications
as well as an output stage in femtocell or repeater applications. It is suitable for
applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,
PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount
QFN plastic package.
!Typical Performance: VCC =5Volts,I
CQ =70mA,P
out =17dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%) Test Signal
1880 MHz 29.0 --47.4 9.1 TD--SCDMA
1920 MHz 29.0 --46.7 9.0 TD--SCDMA
2010 MHz 27.4 --52.0 9.3 TD--SCDMA
2025 MHz 26.8 --50.0 9.5 TD--SCDMA
2140 MHz 27.0 --51.7 9.4 W--CDMA
Features
!Frequency: 1800--2200 MHz
!P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
!Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
!OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
!Active Bias Control (adjustable externally)
!Single 5 Volt Supply
!Cost--effective QFN Surface Mount Package
!In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical CW Performance (1)
Characteristic Symbol
1800
MHz
2140
MHz
2200
MHz Unit
Small--Signal Gain
(S21)
Gp28.8 26.4 25.5 dB
Input Return Loss
(S11)
IRL --17.6 --10.9 -- 9 . 7 dB
Output Return Loss
(S22)
ORL --20.3 --14.7 --13.7 dB
Power Output @ 1dB
Compression
P1dB 30.5 30.5 30.5 dBm
1. VCC1 =V
CC2 =V
BIAS =5Vdc,T
A=25"C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VCC 6 V
Supply Current ICC 550 mA
RF Input Power Pin 14 dBm
Storage Temperature Range Tstg --65 to +150 "C
Junction Temperature (2) TJ150 "C
2. For reliable operation, the junction temperature should not
exceed 150"C.
Table 3. Thermal Characteristics
Characteristic Symbol Value (3) Unit
Thermal Resistance, Junction to Case
Case Temperature 86"C, VCC1 =V
CC2 =V
BIAS =5Vdc
R#JC 52 "C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MMA20312B
Rev. 1.2, 2/2012
MMA20312BT1
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT
CASE 2131--01
QFN 3x3
PLASTIC
$Freescale Semiconductor, Inc., 2010--2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
Table 4. Electrical Characteristics (VCC1 =V
CC2 =V
BIAS = 5 Vdc, 2140 MHz, TA=25"C, 50 ohm system, in Freescale W--CDMA
Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) (1) Gp23.6 27.2 —dB
Input Return Loss (S11) IRL — --10.7 —dB
Output Return Loss (S22) ORL —--15.5 —dB
Power Output @ 1dB Compression, CW P1dB —28.2 —dBm
Third Order Output Intercept Point, Two--Tone CW OIP3 —44.5 —dBm
Noise Figure NF —3.3 —dB
Supply Current (1,2) ICQ 62.5 70 77 mA
Supply Voltage (2) VCC — 5 — V
Table 5. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 0, rated to 150 V
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) III
Table 6. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 "C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150"C.
Figure 1. Functional Block Diagram Figure 2. Pin Connections
VBA2
RFout
RFin
19
28
37
12 11 10
456
RFout
VCC1 VCC1
VBA1
VBIAS
VCC2
GND GND GND
VBA2
RFout
RFin
RFout
VCC1 VCC1
VBA1
VBIAS
VCC2
BIAS
CIRCUIT
BIAS
CIRCUIT
GND GND GND
MMA20312BT1
3
RF Device Data
Freescale Semiconductor, Inc.
Z4 0.080%x 0.030%Microstrip
Z5 0.155%x 0.010%Microstrip
Z6 0.045%x 0.010%Microstrip
Z1 0.250%x 0.030%Microstrip
Z2 0.035%x 0.030%Microstrip
Z3 0.283%x 0.030%Microstrip
RF
INPUT
Figure 3. MMA20312BT1 Test Circuit Schematic — TD--SCDMA
VCC1
BIAS
CIRCUIT
C1
C2
Z1
L1
C5
R1
C6
R2
C7
C8
VBIAS
Z4
Z5
C17 C18 C19
Z2
C3
Z3
C4
RF
OUTPUT
Z6
C16C13
VCC2
1
2
3
12 11 10
4 5 6
8
9
7
Table 7. MMA20312BT1 Test Circuit Component Designations and Values — TD--SCDMA
Part Description Part Number Manufacturer
C1, C5 22 pF Chip Capacitors 06033J220GBS AVX
C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX
C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX
C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX
C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX
C8, C18 1&F Chip Capacitors GRM188R61A105KA61 Murata
C9 Component Not Placed
C16, C19 10 &F Chip Capacitors GRM188R60J106ME47 Murata
C17 0.1 &F Chip Capacitor GRM188R71H104KA93 Murata
L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO
R1 120 'Chip Resistor RR0816Q--121--D Susumu
R2 1300 'Chip Resistor RR0816Q--132--D Susumu
PCB 0.014%,(r=3.7 FR408 Isola
Note: Component number C9 is labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
4
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
C8
QFN 3x3--12B
Rev. 0
R1
C6
C7
R2
C5
C1 C2 L1
C16
C13
C3 C4
C17 C18
C19
RFIN RFOUT
VCC1 VCC2
Figure 4. MMA20312BT1 Test Circuit Component Layout — TD--SCDMA
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component number C9* is labeled on board but not placed.
C9*
VBIAS(1)
Table 7. MMA20312BT1 Test Circuit Component Designations and Values — TD--SCDMA
Part Description Part Number Manufacturer
C1, C5 22 pF Chip Capacitors 06033J220GBS AVX
C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX
C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX
C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX
C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX
C8, C18 1&F Chip Capacitors GRM188R61A105KA61 Murata
C9 Component Not Placed
C16, C19 10 &F Chip Capacitors GRM188R60J106ME47 Murata
C17 0.1 &F Chip Capacitor GRM188R71H104KA93 Murata
L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO
R1 120 'Chip Resistor RR0816Q--121--D Susumu
R2 1300 'Chip Resistor RR0816Q--132--D Susumu
PCB 0.014%,(r=3.7 FR408 Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BT1
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TD--SCDMA
Figure 5. S11 versus Frequency versus
Temperature
2750
-- 3 5
0
1500
f, FREQUENCY (MHz)
1750
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
S11 (dB)
-- 4 0 "C
2000 2250 2500
25"C
85"C
Figure 6. S21 versus Frequency versus
Temperature
2750
0
35
1500
f, FREQUENCY (MHz)
1750
30
25
20
10
5
S21 (dB)
-- 4 0 "C
2000 2250 2500
25"C
85"C
Figure 7. S22 versus Frequency versus
Temperature
2750
-- 3 5
0
1500
f, FREQUENCY (MHz)
1750
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
S22 (dB)
-- 4 0 "C
2000 2250 2500
25"C
85"C
VCC1 =V
CC2 =V
BIAS =5Vdc VCC1 =V
CC2 =V
BIAS =5Vdc
VCC1 =V
CC2 =V
BIAS =5Vdc
15
6
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
TYPICAL CHARACTERISTICS — TD--SCDMA
180
40
60
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
-- 1 0
-- 1 5
-- 2 0
-- 5 0
17
-- 3 5
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
-- 2 5
-- 4 5
79
80
100
120
140
160
-- 4 0
-- 5 5
23
200
20
0
-- 3 0
11 13 15 2119
-- 4 0 "C
25"C
85"C
-- 4 0 "C
25"C
85"C
ACPR
45
10
15
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
29
28
27
21
17
24
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
26
22
79
20
25
30
35
40
23
20
23
50
5
0
25
11 13 15 2119
-- 4 0 "C
25"C
85"C
-- 4 0 "C
25"C
85"C
30
Gain
PAE
Figure 10. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
30
29
28
25
27
1800
24
26
1850
-- 4 0 "C
25"C85"C
31
1900 1950 20502000
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
ICC
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 2017.5 MHz
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 2017.5 MHz
VCC1 =V
CC2 =V
BIAS =5Vdc
-- 6 0
MMA20312BT1
7
RF Device Data
Freescale Semiconductor, Inc.
Z4 0.080%x 0.030%Microstrip
Z5 0.155%x 0.010%Microstrip
Z6 0.045%x 0.010%Microstrip
Z1 0.218%x 0.030%Microstrip
Z2 0.068%x 0.030%Microstrip
Z3 0.250%x 0.030%Microstrip
RF
INPUT
Figure 11. MMA20312BT1 Test Circuit Schematic — W--CDMA
VCC1
BIAS
CIRCUIT
C1
C2
Z1
L1
C5
R1
C6
R2
C7
C8
VBIAS
Z4
Z5
C17 C18 C19
Z2
C3
Z3
C4
RF
OUTPUT
Z6
C16C13
VCC2
1
2
3
12 11 10
9
8
7
4 5 6
+
C9
Table 8. MMA20312BT1 Test Circuit Component Designations and Values — W--CDMA
Part Description Part Number Manufacturer
C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX
C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX
C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX
C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX
C8, C18 1&F Chip Capacitors GRM188R61A105KA61 Murata
C16, C19 10 &F Chip Capacitors GRM188R60J106ME47 Murata
C17 0.1 &F Chip Capacitor GRM188R71H104KA93 Murata
L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO
R1 120 'Chip Resistor RR0816Q--121--D Susumu
R2 1500 'Chip Resistor RR0816Q--152)DSusumu
PCB 0.014%,(r=3.7 FR408 Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
8
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
Figure 12. MMA20312BT1 Test Circuit Component Layout — W--CDMA
C8
QFN 3x3--12B
Rev. 0
R1
C6
C7
R2
C5
C1 C2
C16
C13
C4
C17 C18
C19
RFIN RFOUT
VCC1 VCC2
L1
C9
C3
VBIAS(1)
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Table 8. MMA20312BT1 Test Circuit Component Designations and Values — W--CDMA
Part Description Part Number Manufacturer
C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX
C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX
C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX
C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX
C8, C18 1&F Chip Capacitors GRM188R61A105KA61 Murata
C16, C19 10 &F Chip Capacitors GRM188R60J106ME47 Murata
C17 0.1 &F Chip Capacitor GRM188R71H104KA93 Murata
L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO
R1 120 'Chip Resistor RR0816Q--121--D Susumu
R2 1500 'Chip Resistor RR0816Q--152)DSusumu
PCB 0.014%,(r=3.7 FR408 Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BT1
9
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — W--CDMA
180
40
60
Figure 13. ACPR versus Collector Current
versus Output Power
Pout, OUTPUT POWER (dBm)
-- 1 0
-- 1 5
-- 2 0
-- 5 0
18
-- 3 5
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
-- 2 5
-- 4 5
810
80
100
120
140
160
-- 4 0
-- 5 5
24
200
20
0
-- 3 0
12 14 16 2220
ACPR
45
10
15
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
Pout, OUTPUT POWER (dBm)
29
28
27
21
18
24
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
26
22
810
20
25
30
35
40
23
20
24
50
5
0
25
12 14 16 2220
30
Gain
PAE
Figure 15. P1dB versus Frequency, CW
f, FREQUENCY (MHz)
30
29
28
25
27
2100
24
26
2120
31
2140 2160 22002180
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
ICC
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 2140 MHz
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 2140 MHz
VCC1 =V
CC2 =V
BIAS =5Vdc
-- 6 0
10
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
Figure 16. PCB Pad Layout for QFN 3x3
3.00
3.402.00
0.50
0.30
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
0.70
Figure 17. Product Marking
MA01
YWZ
MMA20312BT1
11
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
12
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
MMA20312BT1
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
!.s2p File
Development Tools
!Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2010 !Initial Release of Data Sheet
1Mar. 2011 !Added “OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)” to Features list, p. 1
!Typical CW Performance table: removed OIP3, p. 1
!Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package
type. Changed from MMA20312B to QFN 3x3--12B, p. 4, 8
1.1 Mar. 2011 !Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value, p. 1
1.2 Feb. 2012 !All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts are
replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and
12, p. 1--3, 5--7, 9. Footnote “(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device]” added to test
circuit component layouts, p. 4, 8.
!Fig. 3, Test Circuit Schematic -- TD--SCDMA, Table 7, Test Circuit Component Designations and Values --
TD--SCDMA, Fig. 4, Test Circuit Component Layout -- TD--SCDMA, Fig. 11, Test Circuit Schematic --
W--CDMA, Table 8, Test Circuit Component Designations and Values -- W--CDMA and Fig. 12, Test Circuit
Component Layout -- W--CDMA: clarified components not placed and components intentionally omitted,
p. 3, 4, 7, 8
MMA20312BT1
15
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: MMA20312B
Rev. 1.2, 2/2012
