UNISONIC TECHNOLOGIES CO., LTD
MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd QW-R206-010,D
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO=160V
* High current gain
SOT-23
1
2
3
*Pb-free plating product number:MMBT5551L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R SOT-23 E B C Tape Reel
MMBT5551L-x-AE3-6-R (1)Packing Type
(3)Package Type
(4)Rank
(5)Lead Plating
(2)Pin Assignment (1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23
(4) x: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
MARKING
G1
MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
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ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector -Base Voltage VCBO 180 V
Collector -Emitter Voltage VCEO 160 V
Emitter -Base Voltage VEBO 6 V
DC Collector Current IC 600 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage VCBO I
C=100µA, IE=0 180 V
Collector-Emitter Breakdown Voltage VCEO I
C=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage VEBO I
E=10µA, IC=0 6 V
Collector Cut-off Current ICBO V
CB=120V, IE=0 50 nA
Emitter Cut-off Current IEBO V
BE=4V, IC =0 50 nA
DC Current Gain(note) hFE VCE=5V, IC =1mA
VCE=5V, IC =10mA
VCE=5V, IC =50mA
80
80
80 160 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2 V
Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
1 V
Current Gain Bandwidth Product fT V
CE=10V, IC =10mA, f=100MHz 100 300 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 6.0 pF
Noise Figure NF IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8 dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400
MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
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■ TYPICAL CHARACTERICS
Fig.2 DC Current Gain
Collector Current, Ic (mA)
DC cu rrent Ga in, h
FE
102
101
100
103
103
102
101
100
10
-1
V
CE
=5V
Fi g.3 B ase-E m i tt er on V oltage
100
101
102
Coll ector Curre nt, Ic (mA)
Base -Emitt er Voltage (V)
0 0.2 0.4 0.6 0.8 1.0
V
CE
=5V
Collector Current, I c (mA)
103
102
101
100
10
-1
Sat ura ti on Voltag e (V)
Fig.4 Saturation Voltage
Fig .5 Current Gain-Bandwidth
Product
F ig . 1 Col l ector Output Cap aci t a nce
V
CE(SAT)
V
BE(SAT)
Ic=10*I
B
Collector Current, Ic (mA)
100101102
103
Current Gain-Bandwidt h Product, f
T
(MHz)
100
101
102
V
CE
=10V
Collector-Base Voltage (V)
C apac it a nc e, Co b ( pF )
103
100101102
0
2
4
6
8
10
f=1MHz
I
E
=0
103101
100
10
-1
10
-2
MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other param eters) listed in products specif ications of any and all UT C products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alf unction of these product s can be reasonably ex pected to result i n personal inj ury. Reproducti on i n
whole or in part is prohibited without the prior written consent of the copyright owner. The inf ormation
presented in t his document does not form part of any quotati on or contract , is bel iev ed to be accurate
and rel iable and may be c hanged wit hout not ice.