© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1Publication Order Number:
BSS63LT1/D
BSS63LT1G
High Voltage Transistor
PNP Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −100 Vdc
Collector−Emitter Voltage
RBE = 10 kW
VCER
−110
Vdc
Collector Current − Continuous IC−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
1
3
2
Device Package Shipping†
ORDERING INFORMATION
BSS63LT1G SOT−23
(Pb−free)
3000/Tape & Reel
BM = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
BM M G
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BSS63LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc)
V(BR)CEO
−100 − −
Vdc
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IE = 0, RBE = 10 kW)
V(BR)CER
−110 − −
Vdc
Collector−Base Breakdown Voltage
(IE = −10 mAdc, IE = 0)
V(BR)CBO
−110 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc)
V(BR)EBO
−6.0 − −
Vdc
Collector Cutoff Current
(VCB = −90 Vdc, IE = 0)
ICBO
− − −100
nAdc
Collector Cutoff Current
(VCE = −110 Vdc, RBE = 10 kW)
ICER
− − −10
mAdc
Emitter Cutoff Current
(VEB = −6.0 Vdc, IC = 0)
IEBO
− − −200
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −25 mAdc, VCE = −1.0 Vdc)
hFE 30
30
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −25 mAdc, IB = −2.5 mAdc)
VCE(sat)
− − −250
mVdc
Base −Emitter Saturation Voltage
(IC = −25 mAdc, IB = −2.5 mAdc)
VBE(sat)
− − −900
mVdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz)
fT50 95 −
MHz
Case Capacitance
(IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz)
CC
− − 20
pF
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
BSS63LT1G
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3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BSS63LT1/D
PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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