NPN Silicon Epitaxial Planar Transistor Features: * * * Epitaxial planar die construction Complementary PNP type available: MMBT4403 Ideal for medium power amplification and switching Applications: * eneral purpose application, switching G application Maximum Rating @ Ta = 25C unless otherwise specified Parameter Symbol Value Units Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current -Continuous IC 600 mA Collector Power Dissipation PC 350 mW Tj, Tstg -55 to +150 C Junction and Storage Temperature V Electrical Characteristics @ Ta = 25C unless otherwise specified Parameter Symbol Test conditions Min. Collector-Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 60 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 40 Emitter-Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0 6 Typ. Max. Unit V www.element14.com www.farnell.com www.newark.com Page <1> 12/09/14 V1.0 NPN Silicon Epitaxial Planar Transistor Parameter Collector Cut-Off Current Base Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol Test conditions ICEX VCE = 35V, VEB = 0.4V IBL VCE = 35V, VEB = 0.4V hFE VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA VCE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.4 0.75 VBE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.95 1.2 fT Cob VCE = 10V, IC = 20mA f =100MHz Min. Typ. 20 40 80 100 40 Max. Unit 0.1 A 300 0.75 250 VCB = 5V, IE = 0, f = 1MHz V MHz 6.5 pF Typical Characteristics @ Ta = 25C unless otherwise specified www.element14.com www.farnell.com www.newark.com Page <2> 12/09/14 V1.0 NPN Silicon Epitaxial Planar Transistor www.element14.com www.farnell.com www.newark.com Page <3> 12/09/14 V1.0 NPN Silicon Epitaxial Planar Transistor Plastic Surface Mounted Package: SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1 Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1 Typical K 2.35 2.45 All Dimensions in mm Soldering Footprint: Part Number Table Description Part Number Transistor, Bipolar, NPN, 40V, 600mA, SOT-23 MMBT4401-7-F Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 12/09/14 V1.0