03/2010
AWU6608
HELP3TM Band 8 / WCDMA
3.4 V / 28.5 dBm Linear PA Module
Data Sheet - Rev 2.1
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
HSPA Compliant
InGaP HBT Technology
HighEfciency:(R99waveform)
40 % @ POUT = +28.5 dBm
22 % @ POUT = +17 dBm
SimplerCalibrationwithonly2BiasModes
• LowQuiescentCurrent:9mA
LowLeakageCurrentinShutdownMode:<1µA
Internal Voltage Regulator
• Integrated“daisychainable”directionalcouplers
withCPLIN and CPLOUTPorts
Optimized for a 50 System
LowProleMiniatureSurfaceMountPackage
RoHSCompliantPackage,260oC MSL-3
APPLICATIONS
WCDMA/HSPA900MHzBandWireless
HandsetsandDataDevices
PRODUCT DESCRIPTION
TheAWU6608HELP3TMPAisa3rdgenerationWCDMA
product for UMTS handsets. This PA incorporates
ANADIGICS’ HELP3TM technology to provide low
powerconsumptionwithouttheneedforanexternal
voltage regulator.A “daisy chainable” directional
couplerisintegratedinthemodulethuseliminatingthe
needofexternalcouplers.Thedeviceismanufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. There are two selectable bias modes
that optimize efciency for different output power
levels,andashutdownmodewithlowleakagecurrent,
whichincreaseshandsettalkandstandbytime.The
self-contained3mmx3mmx1mmsurfacemount
packageincorporatesmatchingnetworksoptimizedfor
outputpower,efciency,andlinearityina50system.
AWU6608
1
2
3
4
5
10
9
8
7
6
V
BATT
RF
IN
V
MODE2
(N/C)
V
MODE1
V
EN
CPL
OU
T
GND
CPL
IN
RF
OUT
V
CC
BiasControl
Voltage Regulation
CPL
GNDatSlug(pad)
2Data Sheet - Rev 2.1
03/2010
AWU6608
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
VBATT
RFIN
VMODE2 (N/C)
VMODE1
VEN
1
2
3
4
56
7
8
9
10
CPLOUT
GND
CPLIN
RFOUT
VCC
1
2
3
4
56
7
8
9
10
PIN NAME DESCRIPTION
1 V
BATT
Battery Voltage
2RF
IN
RF Input
3 V
MODE2
(N/C) No Connection
4 V
MODE1
Mode Control Voltage 1
5 V
EN
PA Enable Voltage
6CPL
OUT
Coupler Output
7GND Ground
8CPL
IN
Coupler Input
9RF
OUT
RF Output
10 V
CC
Supply Voltage
Data Sheet - Rev 2.1
03/2010
AWU6608
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
overtheconditionsdenedintheelectricalspecications.
Notes:
(1) For operation at Vc c = +3.2 V, Po u t is derated by 0.5 dB.
PARAMETER MIN MAX UNIT
SupplyVoltage(V
CC
)0+5 V
BatteryVoltage(V
BATT
)0+6 V
ControlVoltages(V
MODE1
,V
ENABLE
)0+3.5 V
RFInputPower(P
IN
)-+10 dBm
StorageTemperature(T
STG
)-40 +150 °C
PARAMETER MIN TYP MAX UNIT COMMENTS
OperatingFrequency(f) 880 -915 MHz
SupplyVoltage(V
CC
)+3.2 +3.4 +4.2 V POUT < +28.5 dBm
EnableVoltage(V
ENABLE
)+2.15
0
+2.4
0
+3.1
+0.5 VPA "on"
PA"shutdown"
ModeControlVoltage(V
MODE1
)+1.6
0
+2.4
-
+3.1
+0.5 VLowBiasMode
HighBiasMode
RFOutputPower(P
OUT
)
R99WCDMA,HPM
HSPA(MPR=0),HPM
R99WCDMA,LPM
HSPA(MPR=0),LPM
28.0
(1)
27.0
(1)
16.5
(1)
15.5
(1)
28.5
27.5
17
16
28.5
27.5
17
16
dBm 3GPPTS34.121-1,Rel8,
Subtest1,TableC.11.1.3
CaseTemperature(T
C
)-30 -+90 °C
4Data Sheet - Rev 2.1
03/2010
AWU6608
Table4:ElectricalSpecications
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +2.4 V, 50 system, R99 waveform)
Notes:
(1) ACLR and Efciency measured at 897.5 MHz.
(2) Noise measured at 925 MHz to 960 MHz.
PARAMETER MIN TYP MAX UNIT
COMMENTS
P
OUT
V
MODE1
Gain 25
13
27.5
15.5
31
18 dB +28.5 dBm
+17 dBm
0 V
2.4 V
ACLR1at5MHzoffset
(1)
-
-
-41
-42
-38
-38
dBc +28.5 dBm
+17 dBm
0 V
2.4 V
ACLR2at10MHzoffset -
-
-57
-56
-48
-48 dBc
+28.5 dBm
+17 dBm
0 V
2.4 V
Power-AddedEfficiency
(1)
36
19
40
22
-
- %
+28.5 dBm
+17 dBm
0 V
2.4 V
QuiescentCurrent(Icq)
LowBiasMode -913 mA V
MODE1
= +2.4 V
Mode Control Current -0.1 0.25 mA through V
MODE
pin,V
MODE1
= +2.4 V
Enable Current -0.4 0.6 mA through V
ENABLE
pin
BATT Current -3.0 5mA through V
BATT
pin,V
MODE1
= +2.4 V
LeakageCurrent -<1 -µA V
BATT
=+4.2V,V
CC
=+4.2V,V
ENABLE
=0V,V
MODE1
= 0 V
NoiseinReceiveBand
(2)
--135 -133 dBm/Hz P
OUT
<+28.5dBm,V
MODE1
= 0V
--143 -138 dBm/Hz P
OUT
<17dBm,V
MODE1
= +2.4 V
Harmonics
2fo
3fo,4fo
-
-
-35
-45
-30
-35 dBc P
OUT
< +28.5 dBm
Input Impedance - - - VSWR
Coupling Factor -19 -dB
Directivity -20 -dB
Coupler IN-OUT
DaisyChainInsertionLoss -0.25 -dB 698MHzto2620MHz
Pin8to6,ShutdownMode
SpuriousOutputLevel
(allspuriousoutputs) - - -70 dBc
P
OUT
< +28.5 dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingconditions
Loadmismatchstresswithno
permanent degradation or failure 8:1 - - VSWR Appliesoverfulloperatingrange
PhaseDelta -25 -Deg
Data Sheet - Rev 2.1
03/2010
AWU6608
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on theANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplier may be placed in a shutdown
mode by applying logic low levels (see Operating
Rangestable)totheVENABLE and VMODE1voltages.
Bias Modes
ThepowerampliermaybeplacedineitheraLowBias
modeoraHighBiasmodebyapplyingtheappropriate
logic level (see Operating Ranges table) to VMODE1.
TheBiasControltableliststherecommendedmodes
of operation for various applications. VMODE2 is not
necessaryforthisPA.
Twooperatingmodesareavailabletooptimizecurrent
consumption.HighBias/HighPoweroperatingmode
isforPOUTlevels>16dBm.Ataround17dBmoutput
power,thePA can be “Mode Switched”to Medium/
Low power mode for lowest quiescent current
consumption.
Table 5: Bias Control (UMTS)