Hitachi IGBT Module / Silicon N-Channel IGBT
MBM100GR12A
PDE-M100GR12A-0
[Rated 100A/1200V, Dual-pack type]
FEATURES OUTLINE DRAWING
6
30
7
12
35
40
φ0.8
2- φ5.6
25
35
4-Fast-on
Terminal #110
17
45
19 20 18.5
80
92
23 23
3-M5
C1
E2
C2E1
G1
E1
E2
G2
Unit in mm
Weight：230g
• Low saturation voltage and high speed.
• Low turn-OFF switching loss.
• Low noise due to built-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
• High reliability structure.
• Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
E1
G
1
G2
E2
C
1
E2
C2E1
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
Item Symbol Unit Value
Collector-Emitter Voltage VCES V 1200
Gate-Emitter Voltage VGES V ±20
DC IC 100
Collector Current 1ms ICP A 200
DC IF 100 *1
Forward Current 1ms IFM A 200
Collector Power Dissipation PC W 690
Junction Temperature Tj °C -40 ~ +150
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage Viso VRMS 2500(AC 1 minute)
Terminals 1.96 *2
Screw Torque Mounting
-
N·m 1.96 *3
Notes; *1 : RMS current of diode ≤ 30 Arms
*2 , *3 : Recommended value 1.67 N·m
CHARACTERISTICS (TC=25°C)
Item Symbol Unit Min. Typ. Max. Test Conditions
Collector-Emitter Cut-Off Current ICES mA
- -
1.0 V
CE=1200V, VGE=0V
Gate-Emitter Leakage Current IGES nA
-
-
±500 VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage VCE(sat) V
-
2.2 2.8 I
C=100A, VGE=15V
Gate-Emitter Threshold Voltage VGE(TO) V
-
-
10 V
CE=5V, IC=100mA
Input Capacitance Cies pF
-
9000
-
V
CE=10V, VGE=0V, f=1MHz
Rise Time tr
-
0.15 0.3
Turn-On Timeton
-
0.3 0.6
Fall Timetf
-
0.1 0.3
Switching Times
Turn-Off Timetoff
µs
-
0.5 1.0
Reverse Recovery Timetrr µs
-
0.2
0.4
VCC=600V, IC=100A
RG=12Ω *4
VGE=±15V
Inductive Load
IF=100A
Peak Forward Voltage DropVFM V
-
2.5
3.5 I
F=100A, VGE=0V
IGBT Rth(j-c) 0.18
Thermal Impedance FWDRth(j-c) °C/W
-
-
0.4 Junction to case
Notes; *4 : RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; For actual application,please confirm this spec.sheet is the newest revision.
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VGE=15V14V13V12V
200
0 2 4 6 8 10
100
150
50
0
11V
TYPICAL
10V
9V
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic=100A
Ic=200A
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
00 200 400 600 800 1000
TYPICAL TYPICAL
Vcc=600V
Ic =100A
Tc=25°C
Gate to Emitter Voltage, V
GE
(V)
Forward Current, I
F
(A)
Gate Charge, QG (nC)
Gate charge characteristics
100
200
150
50
00 1 2 3 4 5
Forward V oltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M100GR12A-0
Tc=25°C
Ic=100A
Ic=200A
Pc=690W
VGE=0V
Tc=25°C
Tc=125°C
Tc=25°C
VGE=15V14V13V12V
200
0 2 4 6 8 10
100
150
50
0
11V
TYPICAL
10V
9V
Tc=125°C
Tc=125°C
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1.5
1
0.5
00 50 100 150
TYPICAL
TYPICAL
TYPICAL
Switching Time, t (µs)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc=600V
VGE=±15V
RG=12Ω
TC=25°C
Inductive Load
20
15
10
5
00 50 100 150
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
10
0.1
1
0.01 1 10 100
Switching Time, t (µs)
Gate Resistance, RG (Ω)
Switching time vs. Gate resistance
ton
toff
VCC=600V
VGE=±15V
IC =100A
TC=25°C
Inductive Load
TYPICAL
100
10
1
0.1 1 10 100
Switching Loss, Et
on
, Et
off
, E
rr
(mJ/pulse)
Gate Resistance. RG (Ω)
Switching loss vs. Gate resistance
VCC=600V
VGE=±15V
IC =100A
TC=125°C
Inductive Load
Err
Err
Eton
Etoff
VCC=600V
VGE=±15V
RG=12Ω
TC=125°C
Inductive Load
1000
100
10
1
0.1 0 200 400 600 800 1000 1200 1400
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.001 0.01 0.1 1 10
Transient Thermal Impedance, R
th(j-c)
(°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE=±15V
RG=12Ω
TC≤125°C
PDE-M100GR12A-0
tf
tr
tr
tf
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1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales d epartment fo r the latest version of this
data sheets.
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before use.
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aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
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using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
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assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
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secondary damage resulting from use at a value exceeding the absolute maximum rating.
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