High Power Silicon 2 | _c180xs00 Controlled Rectifier 800 Volts 300ARMS a en rn eee ESSE RE The General Electric C180X500 Silicon Controlled Rectifier is specifically designed for low voltage phase control applications; e.g., welding, battery EP \ charging, plating supplies, etc. The SCR has very low power dissipation, 7 thereby giving high current capability on free convection, air-cooled , heatsinks. FEATURES: Low On-State Voltage Excellent Surge and I?t Ratings Providing Easy Fusing High di/dt Ratings High dv/dt Capability with Selections Available Rugged Hermetic Package with Long Creepage Path MAXIMUM ALLOWABLE RATINGS REPETITIVE PEAK OFF-STATE { REPETITIVE PEAK REVERSE NON-REPETITIVE PEAK TYPE VOLTAGE, Vprm! VOLTAGE, Vrarm! REVERSE VOLTAGE, Vasm! Ty = -40 C to +128C Ty = -40C to +125C Ty = +125C C180AX500 100 Volts 100 Volts 200 Volts C180BX500 200 200 300 C180CX500 300 300 400 C180DX500 400 400 500 C180EX500 500 500 600 C180MX500 600 600 720 C180SX500 700 700 840 C180NX500 800 800 950 1 Half sinewave waveform, 10 msec. max. pulse width. RMS On-State Current, Ip@aqs)- +--+ eens 300 Amperes (All Conduction Angles) Average On-State Current, Ip(qy)..- ee ee ene Depends on Conduction Angle (See Charts) Peak One-Cycle Surge (Non-Repetitive) On-State Current, Ipsy, (60 Hz)... 2.2... cee ees 5500 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current, Ipgy (SO Hz)... 2... ee ee ee 5000 Amperes Critical Rate-of-Rise of On-State Current (Non-Repetitive)*.. 0.0.0.0. ee ee ee ees 800 A/us Critical Rate-of-Rise of On-State Current (Repetitive)* 2.0.20... eee nena 500 A/us It (for fusing), for times > 1.5 milliseconds.......... 0.0000 c cece eee ee eee 75,000 (RMS Ampere)? Seconds Peak Gate Power Dissipation, Poy... - tee tee tn ene ee eee ne eet eneae 10 Watts Average Gate Power Dissipation, Po(ay).. 6 ce et eee eens 2 Watts Storage Temperature, Tytg . 0 tee eee ene eben eens -40C to +150C Operating Temperature, Ty 2... eee eee eee eee eee eee -40C to +125C Stud Torque 2... ne ee ete eee ene 250 Lb.-In. (Min.) 300 Lb.-In. (Max.) 28 N-m (Min.) 34 N-m (Max.) *di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of Vppm stated above: 20 voits, 20 ohms gate trigger source with 0.5 usec short circuit trigger current rise time. 847 C180X500 CHARACTERISTICS TEST SYMBOL} MIN. TYP. MAX. UNITS TEST CONDITIONS Repetitive Peak Reverse | Ippm mA | Ty = +25C and Off-State Current and VprM = Vrerm = C180AX500 TrRM - 3 10 100 Volts Peak C180BX500 _ 3 10 200 C180CX500 _ 3 10 300 C180DX500 - 3 10 400 C180EX500 _ 3 10 500 C180MX500 3 10 600 C180SX500 _ 3 10 700 C180NX500 3 10 800 Repetitive Peak Reverse | Ipnrm mA Ty = +125C and Off-State Current and VprM = VrarM = C180AX500 IRRM _ 15 20 100 Volts Peak C180BX500 _ 15 20 200 C180CX500 _ 15 20 300 C180DX500 _ 15 20 400 C180EX500 _ 15 20 500 C180MX500 _ 15 20 600 C180SX500 - 15 20 700 C180NX500 = 15 20 800 Thermal Resistance Resc - 12 14 C/Watt | Junction-to-Case Critical Rate-of-Rise of dv/dt 200 500 Vipusec | Ty = +125C, Vprm = Rated Using Linear Off-State Voltage. (High- or Exponential Rising Waveform. Gate Open er values may cause Circuited. Exponential dv/dt = (.632) device switching. Higher minimum dv/dt selections available consult factory. Holding Current Ip _ 75 500 mAdc | Tc = +25C, Anode Supply = 24 Vdc. Initial On-State Current = 2.5 Amps. Turn-On Delay Time ta 1 _ usec To = +25C, Ip = 100 Adc, Vppm = Rated Gate Supply: 10 Volt Open Circuit, 25 Ohms, 0.1 usec max. rise time. Gate Pulse Width 8 10 psec Tc = 25C, Gate Supply: 20 Volt Open Cir- Necessary to Trigger cuit, 40 Ohms, 5 usec rise time. Ir = 1 Amp For High di/dt Capability, See Chart 7 DC Gate Trigger Current | Igy 100 150 mAde | Tc = +25C, Vp = 6 Vdc, Ry = 3 Ohms _ - 200 To = -40C, Vp = 6 Vdc, Ry = 3 Ohms - _ 125 To = +125C, Vp = 6 Vdc, Ry = 3 Ohms DC Gate Trigger Voltage | Vor _ 1.25 3.0 Vde | To = -40C to +125C, Vp = 6 Vdc, Ry, = 3 Ohms 0.15 - _ To = +125C, Vp = Rated, Ry = 1000 Ohms Peak On-State Voltage VIM ~ 1.75 Volts To = +25C, Ipy = 900 Amps Peak. Duty Cycle < 0.01%. 848 MAXIMUM ALLOWABLE CASE TEMPERATURE -C @ n o a oO SINUSOIDAL. WAVEFORM be Angle 50-400 Hz Conduction Angle % 100 200 300 400 AVERAGE ON-STATE CURRENT AMPERES 1. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSOIDAL CURRENT WAVEFORM 1000 ON-WAT a o 9 o 6 AVERAGE ON~STATE POWER DISSIPAT! 400 109 380 60 40 to 60 AVERAGE ON-STATE CURRENT -AMPERES 10 3. MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM 800 600 400 200 Tj =126C $ 888 INSTANTANEOUS ON-STATE CURRENT -AMPERES n Oo 2 4 6 86 LO AVERAGE FORWARD POWER DISSIPATION 12 14 16 MAXIMUM ALLOWABLE CASE TEMPERATURE-C [ C180X500 | a no Ss Duty Cycle= loo(t/T 50-400 H 5 3 80 Percent Duty Cycle 16 2/3 70 60 50 0 100 200 3 AVERAGE ON~STATE CURRENT AMPERES 2. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM PERCENT DUTY CYCLE= os 20 40 #60 80 100 200 000 400 6008 AVERAGE ON-STATE CURRENT~AMPERES 4. MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM 0 18 $10 22 24 26 28 INSTANTAN EOUS ON~ STATE VOLTAGE --VOLTS 5. MAXIMUM ON-STATE CHARACTERISTICS 849 C180X500 12+ RATINGS (RMS AMPERES) SECONDSX 1000 =| 3 HALF SINE WAVE ON- STATE PEAK [= @ CURREN T~AMPERES X! a NOTES: 1. Maximum allowable gate power dissipation = 2 watts. 2. The locus of possible DC trigger points lie outside the boundaries shown at various case temperatures. 3. Tp = rectangular gate current pulse width. 6. GATE TRIGGERING CHARACTERISTICS i) 2 3 4 5 PULSE TIME~ MILLISECONDS 7. SUB-CYCLE SURGE (NON-REPETITIVE) CURRENT RATING FOLLOWING ON-STATE RATED LOAD CONDITIONS 6 7 8 90 100 80 $ a o 40 20 20v, 2001s MINIMUM LINE AT di/t > 100 AMP/pS 2 0.5 42 SEC. MAX INSTANTANEOUS GATE VOLTAGE - VOLT QUIS MINIMUM GATE AT di/at < 100 AMP/uS Tp* 52SEC. MIN 10, SEC oj 4 6 810 2. 4 6 810 20 40 6080100 INSTANTANEOUS GATE CURRENT ~ AMPERES 10 8 o g9 > D@_ 9 nv TRANSIENT THERMAL !M PEDANCE-C/w 2 sBe n .OOl Ol 0.1 1.0 10 TIME SECONDS 8. TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE OUTLINE DRAWING | E le- SEATING PLANE RED H Om - WHITE. Om SEE NOTE p eoene J + L SEE NOTE 2 =e " | i D F TERMINAL | TERMINAL | TERMINAL | TERMINAL Ss MODEL THREAD SIZE AUX CATHODE ANODE 3/4 -16 180X800 GATE | catHODE a 0! Oat oe Q @) (2D NOTES: 1. Gate and auxiliary cathode leads supplied lightly 4, twisted together, 2. Flexible copper lead. 5. 3 One nut and one lockwasher supplied with each unit. Material of hardware is steel, cad plated. 850 100 SYM. INCHES MaTRIC note | SYM. INCHES METRIC NOTE MIN. MAX. | MIN. MAX. MIN. MAX. / MIN. | MAX. 1.450 | 1.550 |36.83 (39.37 437) - (LOog] - .500] .750) 12:70] 19.05 M 325] .360) 8.25) 214 2.300 |2.500 | 58.42 | 63.50 N 093] 125] 2.36; 3.18 7.350 | 8.100 /I86.69 j20574 P {1LO60] 1100) 26.92 | 27.94 7. 350 | 8.100 18669 [205.74 Q 660| .749/ 16.76] 19.02 F | 1047] 1077 | 26.59 | 2736 G A40{ 150] 3.55] 3.8! T - ASE] - 396| 4 H .215| .300|] 5.46] 762 J | 530} .687) 1346) 1745 Vv 1,240) 1.250) 31.49) 3175 K | 322] .333) 8.17] 8.46 Com- plane. T" dimension is area of unthreaded portion. plete threads are within 2.5 threads of seating Angular orientation of terminals is undefined.