1N5059 to 1N5062
Document Number 86000
Rev. 1.5, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
949539
Standard Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristics
• Glass passivated
• Low reverse current
• High surge current loading
• Hermetically sealed axial-leaded glass envelope
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Rectification diode, general purpose
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Package
1N5059 VR = 200 V; IFAV = 2 A SOD-57
1N5060 VR = 400 V; IFAV = 2 A SOD-57
1N5061 VR = 600 V; IFAV = 2 A SOD-57
1N5062 VR = 800 V; IFAV = 2 A SOD-57
Parameter Test condition Part Symbol Value Unit
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics 1N5059 VR = VRRM 200 V
1N5060 VR = VRRM 400 V
1N5061 VR = VRRM 600 V
1N5062 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half-sinewave IFSM 50 A
Average forward current RthJA = 45 K/W, Tamb = 50 °C IFAV 2A
RthJA = 100K/W, Tamb = 75 °C IFAV 0.8 A
Junction and storage
temperature range
Tj = T stg - 55 to + 175 °C
Max. pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I(BR)R = 1 A, indicutive load ER20 mJ
e2
www.vishay.com
2
Document Number 86000
Rev. 1.5, 13-Apr-05
1N5059 to 1N5062
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Junction ambient Lead length l = 10 mm,
TL = constant
RthJA 45 K/W
on PC board with spacing 25
mm
RthJA 100 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 1 A VF1V
IF = 2.5 A VF1.15 V
Reverse current VR = VRRM IR1µA
VR = VRRM, Tj = 100 °C IR10 µA
VR = VRRM, Tj = 150 °C IR100 µA
Reverse breakdown voltage IR = 100 µA 1N5059 V(BR)R 225 1600 V
1N5060 V(BR)R 450 1600 V
1N5061 V(BR)R 650 1600 V
1N5062 V(BR)R 900 1600 V
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 4µs
Diode capacitance VR = 0 V, f = 1 MHz CD40 pF
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
0
40
80
120
160
200
25 50 75 100 125 150 175
T
j
- Junction Temperature ( °C)
15764
V
R
=V
RRM
P - Reverse Power Dissipation ( mW )
R
160 K/W
100 K/W
45 K/W
R
thJA
=
1N5062
1N5061
1N5060
1N5059
Figure 2. Max. Reverse Current vs. Junction Temperature
0.1
1
10
100
1000
15765
V
R
=V
RRM
I - Reverse Current ( µA)
R
25 50 75 100 125 150 175
T
j
- Junction Temperature ( °C)
1N5059 to 1N5062
Document Number 86000
Rev. 1.5, 13-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Forward Current vs. Forward Voltage
15763
V
R
=V
RRM
half sinewave
R
thJA
= 45 K/W
l =10 mm
R
thJA
= 100 K/W
PCB:d=25mm
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I - Average Forward Current ( A )
FAV
I - Forward Current(A)
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage(V)
15762
F
T
j
=25°C
T
j
= 175 °C
0.01
0.1
1
10
100
0.001
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
0.1 1 10 100
V
R
- Reverse Voltage(V)
15766
C - Diode Capacitance ( pF )
D
f=1MHz
Cathode Identification
0.82 (0.032) max.
Sintered Glass Case
SOD-57
94 9538
26(1.014) min. 26(1.014) min.
ISO Method E
3.6 (0.140)max.
4.0 (0.156) max.
www.vishay.com
4
Document Number 86000
Rev. 1.5, 13-Apr-05
1N5059 to 1N5062
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
