Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.90.2 8.60.2 5.90.2 Features 0.7+0.3 -0.2 0.70.1 13.50.5 * Satisfactory forward current transfer ratio hFE collector current IC characteristics. * High collector-emitter voltage (Base open) VCEO * Small collector output capacitance (Common base, input open circuited) Cob * Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 W to 60 W output amplifier. 0.45+0.2 -0.1 0.45+0.2 -0.1 (1.27) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -150 V Collector-emitter voltage (Base open) VCEO -150 V Emitter-base voltage (Collector open) VEBO -5 V Collector current IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C (1.27) 1 2 3 (3.2) Absolute Maximum Ratings Ta = 25C 2.540.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = - 0.1 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -100 V, IE = 0 Forward current transfer ratio * hFE VCE = -5 V, IC = -2 mA VCE(sat) IC = -30 mA, IB = -3 mA Collector-emitter saturation voltage Transition frequency Conditions VCB = -10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Cob VCB = -10 V, IE = 0, f = 1 MHz Noise voltage NV VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 k, Function = FLAT Min Typ Max Unit -150 V -5 V 130 -1 A 330 -1 V 200 150 MHz 5 pF 300 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE 130 to 220 185 to 330 Publication date: November 2002 SJC00012BED 1 2SA1124 PC Ta IC VCE IC VBE -80 1.2 -120 VCE = -5 V 0.8 0.6 0.4 0.2 -50 -40 -150 A -30 -100 A -20 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (C) -2 0 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) -1 Ta = 75C 25C -25C -1 -10 -100 500 400 Ta = 75C 300 25C -25C 200 100 0 - 0.1 -1 -10 Collector output capacitance C (pF) (Common base, input open circuited) ob IE = 0 f = 1 MHz Ta = 25C 4 3 2 1 0 -1 -10 -100 Collector-base voltage VCB (V) 2 0 -12 0 SJC00012BED - 0.4 - 0.8 -1.2 -1.6 -2.0 Base-emitter voltage VBE (V) 300 VCE = -5 V Cob VCB 5 -40 fT I E Collector current IC (mA) Collector current IC (mA) 6 -10 -60 hFE IC -10 - 0.01 - 0.1 -8 600 IC / IB = 10 - 0.1 -6 -25C -80 Collector-emitter voltage VCE (V) VCE(sat) IC -100 -4 Ta = 75C -20 -50 A -10 25C -100 VCB = -10 V Ta = 25C Transition frequency fT (MHz) 0 IB = -500 A -450 A -400 A -350 A -300 A -250 A -200 A -60 Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta = 25C -70 -100 250 200 150 100 50 0 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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