Transistors
1
Publication date: November 2002 SJC00012BED
2SA1124
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
■Features
•Satisfactory forward current transfer ratio hFE collector current IC
characteristics.
•High collector-emitter voltage (Base open) VCEO
•Small collector output capacitance (Common base, input open cir-
cuited) Cob
•Makes up a complementary pair with 2SC2632, which is optimum
for the pre-driver stage of a 40 W to 60 W output amplifier.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −150 V
Collector-emitter voltage (Base open) VCEO −150 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC1W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = − 0.1 mA, IB = 0 −150 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −100 V, IE = 0 −1µA
Forward current transfer ratio *hFE VCE = −5 V, IC = −2 mA 130 330
Collector-emitter saturation voltage VCE(sat) IC = −30 mA, IB = −3 mA −1V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 5 pF
(Common base, input open circuited)
Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB 150 300 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.9
±0.2
0.7
±0.1
4.9
±0.2
8.6
±0.2
0.7
+0.3
–0.2
13.5
±0.5
2.54
±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank R S
hFE 130 to 220 185 to 330
2SA1124
2SJC00012BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE IC VBE
Cob VCB
0 16040 12080 14020 10060
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
0−12−10−8−2−6−4
0
−80
−60
−20
−50
−70
−40
−10
−30
T
a
= 25°C
−100 µA
−150 µA
−200 µA
−250 µA
−300 µA
−350 µA
−400 µA
−450 µA
−50 µA
I
B
= −500 µA
Collector current IC (mA)
Collector-emitter voltage VCE (V)
0−2.0−1.6− 0.4 −1.2− 0.8
0
−120
−100
−80
−60
−40
−20
V
CE
= −5 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC (mA)
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
− 0.1 −1−10 −100
0
600
500
400
300
200
100
V
CE
= −5 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC (mA)
1 10 100
0
300
250
200
150
100
50
V
CB
= −10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
−1−10 −100
0
6
5
4
3
2
1
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
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2002 JUL
