CLA30MT1200NPB High Efficiency Thyristor VRRM = 1200 V I TAV = 15 A VT = 1.35 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA30MT1200NPB Backside: anode/cathode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 4 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-220 Triac for line frequency Three Quadrants Operation - QI - QIII Planar passivated chip Long-term stability of blocking currents and voltages Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 High creepage distance between terminals Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. 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For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30MT1200NPB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C I R/D reverse current, drain current VT forward voltage drop 10 A 1.5 mA TVJ = 25C 1.35 V 1.68 V 1.35 V IT = 15 A IT = 30 A IT = 15 A IT = 30 A I RMS 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only total power dissipation I TSM max. forward surge current value for fusing V TVJ = 25C RMS forward current per phase thermal resistance case to heatsink 1200 TVJ = 125C TC = 120 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1.79 V T VJ = 150 C 15 A 33 A TVJ = 150 C 0.89 V 30 m 0.95 K/W K/W 0.50 TC = 25C 130 W t = 10 ms; (50 Hz), sine TVJ = 45C 170 A t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A t = 10 ms; (50 Hz), sine TVJ = 150 C 145 A t = 8,3 ms; (60 Hz), sine VR = 0 V 155 A t = 10 ms; (50 Hz), sine TVJ = 45C 145 As t = 8,3 ms; (60 Hz), sine VR = 0 V 140 As t = 10 ms; (50 Hz), sine TVJ = 150 C 105 As 100 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 9 t P = 300 s PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0.3 A/s; 45 A IG = 15 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = VDRM non-repet., I T = pF 5 W 1 W 0.2 W 150 A/s 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1.3 TVJ = -40 C 1.6 V VD = 6 V TVJ = 25 C 40 mA TVJ = -40 C 60 mA TVJ = 150C 0.2 V 1 mA TVJ = 25 C 70 mA R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 50 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 15 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30MT1200NPB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 C -40 125 C 150 C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part description C L A 30 MT 1200 N PB XXXXXX Logo Assembly Line Lot # g = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Ordering Number CLA30MT1200NPB Similar Part CLA30MT1200NPZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tube Quantity 50 Code No. 517031 Voltage class 1200 T VJ = 150 C Thyristor V 0 max threshold voltage 0.89 R0 max slope resistance * 27 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Marking on Product CLA30MT1200NPB V m Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30MT1200NPB Outlines TO-220 A = supplier option H1 OP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 4 3 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30MT1200NPB Thyristor 50 140 TVJ = 125C 40 1000 50 Hz, 80% VRRM TVJ = 150C VR = 0 V 120 ITSM IT 30 2 It TVJ = 45C 100 [A] 20 TVJ = 45C 100 [A] 2 [A s] TVJ = 125C 80 10 TVJ = 125C TVJ = 25C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 4 1 IGD: TVJ = -40C IGD: TVJ = 25C 2 [V] IGD: TVJ = 0C B B 2 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 C B VG 1 1000 IGD: TVJ = 125C 3 1 30 100 typ. tgd IT(AV)M Limit 20 [s] [A] 10 TVJ = 125C 10 IGD: TVJ = 25C A 1 10 0 0 25 50 75 0 100 20 50 75 100 125 150 175 Fig. 6 Max. forward current at case temperature 1,0 dc = 1 0.5 0.4 0.33 0.17 0.08 P(AV) 25 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 25 0 IG [mA] IG [mA] 30 1000 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 0,8 ZthJC 0,6 15 [K/W] [W] 0,4 Rthi [K/W] t i [s] 0.120 0.0100 0.100 0.220 0.0011 0.0250 0.245 0.265 0.3200 0.0900 10 0,2 5 0 0 10 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [C] (c) 2015 IXYS all rights reserved 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b