25C D MM 4235605 goo4oas T maSIEG ~ - Teagesy NPN Silicon Transistors STEMENS AKTIENGESELLSCHAF IC 197 uC 108 BC 109 BC 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collectar is electrically connected to the case. The transistors are particularly suitable for use in AF input and driver stages. Type Ordering code BC 107") Q62702-C680 BC 107A Q60203-X107-A E ec BC 107B Q60203-X107-B 60,45 i, Le BC 108?) 060203-X108 a] 1 FF MF BC 108 A 60203-X108-A C.. 7 WS BC 108 B Q60203-X108-B pari ol52_, LL he Bc 108C Q60203-X108-C a 25400 Bc 1091) Q60203-X109 Approx. weight 0.3 g Dimensions in mm BC 109B Q60203-X109-B , BC 109C Q60203-X109-C Maximum ratings Bc107_ | BC108_ | BC109 Collector-emitter voltage Vos 50 30 30 Vv Collector-emitter voltage Vero 45 20 20 Vv Emitter-base voltage Veo 6 5 5 Vv Collector current Ic 100 100 50 mA Collector peak current Tom 200 200 ~ mA Base current Ig 50 50 5 mA Junction temperature Tj *1 175 175 175 c Storage temperature range Tstg -55 to +175 C Total power dissipation Prot 300 | 300 | 300 mw - Thermal resistance Junction to ambient air Rinua $500 s500 500 K/W Junction to case Rinsc $200 $200 $200 K/W 1} if the order does not Include any exact indication of the current amplification group desired, a transistor of a current amplification group just available from stock will be delivered. . - 135 1565 G-06 tik etait iat wuts ite vn hee mea 25C D MM 4235405 OOOUOS0 b MMSIEG .. SIEMENS AKTIENGESELLSCHAF 7-29-17 BC 107 BC 108 BC 109 Static characteristics (Ta, = 25 C). The transistors are grouped according to the DC current gain hpe and marked by A, B, C. At Vce = 5 V and the collector currents indicated below the following static characteristics apply: hee group A B c Type BC 107 BC 107 - BC 108 BC 108 BC 108 - BC 109 BC 109 Ic hee Peg hee mA Io/ Ig Ie/Ip Io/Ip 0.01 90 150 270 2 170 (120 to 220) 290 (180 to 460) 500 (380 to 800) 1002) 120 2002! 4002) BC 107 BC 108 BC 109 Ic Vee Ic Ip Vogsat!? Vetsat!? mA Vv mA mA Vv Vv 0.1 0.55 10 0.5 0.07 (<0.2) 0.73 (<0.83) 2 0.62 (0.55 to 0.7) 100?) I 0.832) 1002) 5 0.2 (<0,6)2) 0.87 (<1.05)2) Static characteristics (Tamp = 25C) BC 107 BC 108 BC 109 Collector cutoff current (Vces = 50 V} Ices 0.2 (<15) | - - nA Collector cutoff current (Vces = 30 V) Tees - 0.2 (<15) | 0.215) | nA Collector cutoff cusrent (Voces = 50V; Tamb = 125C) Ices 0.2 (<4) - - nA Collector cutoff current (Vers = 30 V; Tam = 125C) lees - 0.2 (<4) 0.2 (<4) pA Emitter-base breakdown voltage (ego =1 uA) Vipr)EBO >6 >5 >6 Vv Colfector-emitter break- down voltage (ceo = 2 mA) Viericeo >45 >20 >20 Vv 1) The transistor is overloaded to such an extent that the DC current gain decreases to hfe = 20 2) These values do not apply to BC 109, 136 1566 G-07 ath Ra 1 bit ot Mine meer wa25C D MM 8235605 O00405) 8 MMSIEG | 77 QG-/7 row SIEMENS AKTIENGESELLSCHAF BC 107 BC 108 BC 109 : Dynamic characteristics (Tanp= 25C) | BC 107 BC 108 BC 109 i Transition frequency i Uc = 0.5 mA; Vee = 3 V) fT 85 85 85 MHz : Transition frequency : (Ig = 10 mA; Voge = 5 V; f = 100 MHz) a 250 (>150) | 250 (>150) | 300 (<150) | MHz Collector-base capacitance (Vego = 10 V; f = 1 MHz) Cexo 3.5 (<6) 3.5 (<6) 3.5 (<6) pF Emitter-base capacitance (Vego = 0.5 V; f = 1 MHz) Ceso 8 8 8 pF : Noise figure (Ig = 0.2 mA; 4 Voge = 5 Vi Rg = 2 kQ; 2 Af = 30 Hz to 15 kHz) NF - - <4 dB . Noise figure (Ic = 0.2 mA Veg = 5 Vi Rg = 2 kQ, f =1kHz; Af = 200 Hz) NF 2 {<10) 2 (<10) <4 dB Dynamic characteristics (Tamp = 25C) Ig = 2 mA; Veg = 5 Vi f = TkHz hee group A B c Type BC 107 BC 107 - BC 108 BC 108 BC 108 - BC 109 BC 109 tite 2.7 (1.6 to 4.5) 4.5 (3.2 to 8.5) 8.7 (6 to 16} kQ N20 1.5 2 3 10-4 hate 220 330 600 - ho29 18 (<30) 30 (<60) 60 (<110) ps . 137 1567 6-032e5C D M@@ 4235605 0004092 T MMSIEG 5 > 7 I-17 4D UU, - IEMENS AKTIENGESELLSCHAF BC 107 s BC 108 BC 109 : Total parm. power dissipation Permissible pulse load versus temperature fauc.= f(t): v= parameter : Prot = (7; Rin = parameter t BC 107, BC 108, BC 109 8C107, BC 108, 8C109 100 200C . o 1% 0% 10 w? 07 10 ols, - } Input characteristic [g =f (Vac} Collector currant /o = f (Vee) Vce = 5 V (common emitter configuration) Vce = 5 V (common emitter configuration) mA BC 107, BC 108, BC 109 wA C107, BC 108, BC 109 1 w 5 5 k h ri | sf 5 5 Average values nme cone SeATEFING limit w atTamb= Ww! 5 5 101 00 0 05 4pV 0 ~ Vie 138 1568 G-0925C ) MM 8235605 0004093 1 MESIEG finery STEMENS AKTIENGESELLSCHAF ~~ BC 107 BC 108 Output characteristics Io =f (Voge); fg = parameter (common emittar configuration) dA BC107, BC 108, 8C109 Voe Collectar-emitter saturation voltage Veesat = f (Uc); tre = 20; Tamp = parameter {common emitter configuration} 8C 107, BC 108, 8C 109 T___ Scattering init 0 Of O02 03 Oe O08 O6Y > Voe sat 1569 6-10 BC 109 Output characteristics Ig =f (Voce): Vag = parameter (common emitter configuration} lA BC107, HC108, BC109 1000 .(} + 800 600 400 200 0 0 1 2 3 & Y > Ver Base-emitter saturation voltage Voesat = f Uc): bee = 20; Tamb = parameter {common emitter configuration} mA BC 107, BC108, BC 109 10 5 ky 1! ee Average Scattering 700 af 0 02 OF O68 08 0 tv Var sat 139- T-29-17 woo ak25C D MM 823505 OOO40N4 3 MMSIEG , 7H QG./7 ) 7 SIEMENS AKTIENGESELLSCHAF BC 107 BC 108 BC 109 Collector cutoff current versus temperature [ogo = f (Tab) for maximum permissible breakdown valtage BC 107, BC 108, BC 109 Average value Emit 0 50 00 50C > land Transition frequency fr =f Uc): Vee = parameter MHz BC 107, BC 108, BC 109 10 fy 5 | 10 wg 5 t0! 5 10mA ri; 1570 G-11 DC current gain hee = f (Lo); Vce = & V; Tamb = parameter (common emitter configuration) 8C 107, BC 108, BC 109 Collector-base capacitance Ccgo =f (Vcao) : Emitter-base capacitance Cepo =f (Vepo) oF BC 107. BC 108, BC 109 2 Ccao Seno 10 148349 ww 5 10 5 tv Vono} Vesa ce maar FMLA vee25 D MM 6235605 OOO4O5S 5 MESIEG) 7- 9G_/7 SIEMENS AKTIENGESELLSCHAF BC 107 BC 108 BC 109 h-parameter versus callector current hp Yo lect fF Itag BC 107, BC 108, BC 109 BC107, BC 108, BC 109 2,0 /g~2mA He 45 40 08 107 5 10 5 10'mA 0 10 20 a0v /p > Me Nolse tigure NF = f (fc) Vee = 5 V; f = 120 Hz; Ry = parameter dB BC109 20 fs 10 we wtp rlr . ~ 141 L571 G<12Bi ft TS asc D MM 8235605 OOO4OqG 7 MMSIEG | SIENENS AKTIENGESELLSCHAF ' D BC 109 T-A4-1)7 Noise figure NF = f (ic) Noise figure NF =f (ic) Vce = 5 V; f= 1kHz; Ay = parameter Vee = 5 V; f = 10 kHz; Ry = parameter dB 20 NF i 15 10 : 5 0 -3 -2 1 0 1 2 10 10 10 10 to'ma ow? ow a * I r/p Noise figura NF =f {Vce) Noise figura NF = ff Ig = 0.2.mA; R= 2 KO, f= 1 kHz Voe= 5 Vile = 0.2 mA Af = 200 Hz; Tamp = 25C Ag = 2kQi Tomb = 26C 8 20 NE : 16 10 5 0 0 ow sw 5 5 wy 0 10 10 10 10 kHz cE ~f 142 1572 6-13