MMBT5551
NPN Plastic
Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
Features
• Collector Current: ICM=0.6A
• Collector-Base Voltage: V(BR)CBO=180V
• Operating And Storage Temperatures –55OC to 150OC
• Capable of 0.3Watts of Power Dissipation
• Marking: G1
DIMENSIONS
INCHES
MM
DIM MI N MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector -Emitter Breakdown Voltage
(I
C=1.0mAdc, IB=0)
160 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
180 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=10uAdc, IC
=0)
6.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=120Vdc, IE=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE-1 DC Current Gain
(V CE=5.0Vdc, I
C=1.0mAdc)
80 --- ---
hFE-2 DC Current Gain
(V CE=5.0Vdc, I
C=10mAdc )
100 200 ---
hFE-3 DC Current Gain
(V CE=5.0Vdc, I
C=50mAdc)
50 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=50mAdc, IB=5.0mAdc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=50mAdc,IB=5.0mAdc) --- 1.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(I
C=10mAdc, VCE=5.0Vdc, f=30MHz) 100 --- MHz
.
7
2.000
in
h
mm
.
1
.800
.035
.900
.
7
.950
.037
.950
K
A
B
C
D
EF
GH
Revision: A 2011/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 2
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1