PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features * DC Current Gain Specified to 7.0 Amperes * * * * hFE = 30-150 @ IC = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO-220AB Compact Package Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Collector-Base Voltage Symbol 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage VCEO VCB Value Unit 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 - 50 - 70 VOLTS, 40 WATTS MARKING DIAGRAM 4 TO-220AB CASE 221A STYLE 1 1 2 PIN 1. 2. 3. 4. 3 Vdc 30 50 70 Vdc 40 60 80 VEB 5.0 Vdc Collector Current - Continuous - Peak IC 7.0 10 Adc Base Current IB 3.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W W/C TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range http://onsemi.com 2N6xxx xxx G A Y WW 2N6xxxG AYWW BASE COLLECTOR EMITTER COLLECTOR = Specific Device Code = See Table on Page 4 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max Unit RqJC 3.125 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 9 1 Publication Order Number: 2N6107/D PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 160 140 Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 30 50 70 - - - - - - 1.0 1.0 1.0 - - - - - - 100 100 100 2.0 2.0 2.0 - 1.0 30 30 30 2.3 150 150 150 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICEO ICEX IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 2.5 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 7.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices hFE - Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) - 3.5 Vdc Base-Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) - 3.0 Vdc 4.0 10 - - DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92 2N6107, 09, 11 fT MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 250 pF Small-Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 - - 2. 3. 4. Indicates JEDEC Registered Data. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT = |hfe| * ftest http://onsemi.com 2 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 VCC +30 V 25 ms RC +11 V SCOPE RB 0 D1 51 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Figure 2. Switching Time Test Circuit 2.0 1.0 TJ = 25C VCC = 30 V IC/IB = 10 t, TIME (s) 0.7 0.5 0.3 0.2 tr 0.1 0.07 0.05 td @ VBE(off) 5.0 V 0.03 0.02 0.07 0.1 1.0 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 7.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Turn-On Time 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMPS) PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 15 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 0.5 ms 7.0 5.0 dc 3.0 2.0 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 1.0 0.7 0.5 0.3 0.2 0.15 1.0 5.0 ms 2.0 3.0 20 30 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 300 5.0 t, TIME (s) 2.0 ts 1.0 0.7 0.5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 tr 0.3 0.2 TJ = 25C Cib 100 70 Cob 50 0.1 0.07 0.05 0.07 0.1 0.2 0.3 0.5 2.0 3.0 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.5 5.0 7.0 1.0 Figure 6. Turn-Off Time 10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance ORDERING INFORMATION Device Device Marking Package 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free) 2N6111 TO-220AB (Pb-Free) 50 Units / Rail TO-220AB 2N6288 TO-220AB (Pb-Free) 2N6292 2N6292G 50 Units / Rail TO-220AB 2N6288 2N6288G 50 Units / Rail TO-220AB 2N6109 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http://onsemi.com 4 50 Units / Rail 30 50 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6107/D