© Semiconductor Components Industries, LLC, 2012
March, 2012 − Rev. 7
1Publication Order Number:
BSS84LT1/D
BSS84LT1, SBSS84LT1
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
•SOT−23 Surface Mount Package Saves Board Space
•AEC Q101 Qualified − SBSS84LT1
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 50 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
130
520
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg −55 to
150
°C
Thermal Resistance − Junction−to−Ambient RqJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
1
2
P−Channel
http://onsemi.com
SOT−23
CASE 318
STYLE 21
PD MG
G
MARKING DIAGRAM & PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Device Package Shipping†
ORDERING INFORMATION
BSS84LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SBSS84LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
PD = Specific Device Code
M = Date Code
G= Pb−Free Package
(*Note: Microdot may be in either location)
−50 V 10 W @ 10 V
V(BR)DSS RDS(ON) MAX
BSS84LT1, SBSS84LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
V(BR)DSS −50 − − Vdc
Zero Gate Voltage Drain Current
(VDS = −25 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS −
−
−
−
−
−
−0.1
−15
−60
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±10 nAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA) VGS(th) −0.9 − −2.0 Vdc
Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc) RDS(on) −4.7 10 W
Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz) |yfs| 50 − − mS
DYNAMIC CHARACTERISTICS
Input Capacitance VDS = 5.0 Vdc Ciss −36 −pF
Output Capacitance VDS = 5.0 Vdc Coss −17 −
Transfer Capacitance VDG = 5.0 Vdc Crss −6.5 −
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
td(on) −3.6 −ns
Rise Time tr−9.7 −
Turn−Off Delay Time td(off) −12 −
Fall Time tf−1.7 −
Gate Charge VDD = −40 Vdc, ID = −0.5 A,
VGS = −10 V
QT−2.2 −nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current IS− − −0.130 A
Pulsed Current ISM − − −0.520
Forward Voltage (Note 2) VGS = 0 V, IS = −130 mA VSD − − −2.2 V
1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
VGS = -3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
BSS84LT1, SBSS84LT1
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3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
)
Figure 3. On−Resistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. On−Resistance versus Drain Current
-ID, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with Temperature
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
25°C
VGS = -4.5 V
VGS = -10 V
ID = -0.52 A
-55 -5 45 95 145
TJ = 150°C
4
0.6
0.8
0 0.5 1.0 1.5
3
0.01
-55°C25°C
2.0
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
)
0 0.2 0.4 0.6
2
5
6
-ID, DRAIN CURRENT (AMPS)
VGS = -10 V
4
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
-6
-2
0
QT, TOTAL GATE CHARGE (pC)
-8
-4
500
VDS = -40 V
TJ = 25°C
1000
ID = -0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
VGS = -4.5 V
ID = -0.13 A
2000
2.5 3.0
150°C
25°C
-55°C
8
9
7
-5
-1
-7
-3
ID, DRAIN CURRENT (AMPS)
BSS84LT1, SBSS84LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BSS84LT1/D
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