BSS84LT1, SBSS84LT1 Power MOSFET Single P-Channel SOT-23 -50 V, 10 W * SOT-23 Surface Mount Package Saves Board Space * AEC Q101 Qualified - SBSS84LT1 * These Devices are Pb-Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX -50 V 10 W @ 10 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 50 Vdc Gate-to-Source Voltage - Continuous VGS 20 Vdc Drain Current Continuous @ TA = 25C Pulsed Drain Current (tp 10 ms) ID IDM 130 520 Total Power Dissipation @ TA = 25C PD 225 mW Operating and Storage Temperature Range TJ, Tstg - 55 to 150 C RqJA 556 C/W TL 260 C Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds P-Channel 3 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 2 3 SOT-23 CASE 318 STYLE 21 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain PD MG G 1 Gate PD M G 2 Source = Specific Device Code = Date Code = Pb-Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping BSS84LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel SBSS84LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2012 March, 2012 - Rev. 7 1 Publication Order Number: BSS84LT1/D BSS84LT1, SBSS84LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS -50 - - Vdc - - - - - - -0.1 -15 -60 - 10 nAdc Vdc OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Zero Gate Voltage Drain Current (VDS = -25 Vdc, VGS = 0 Vdc) (VDS = -50 Vdc, VGS = 0 Vdc) (VDS = -50 Vdc, VGS = 0 Vdc, TJ = 125C) IDSS Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS - Gate-Source Threaded Voltage (VDS = VGS, ID = -250 mA) VGS(th) -0.9 - -2.0 Static Drain-to-Source On-Resistance (VGS = -5.0 Vdc, ID = -100 mAdc) RDS(on) - 4.7 10 W |yfs| 50 - - mS pF mAdc ON CHARACTERISTICS (Note 1) Transfer Admittance (VDS = -25 Vdc, ID = -100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance VDS = 5.0 Vdc Ciss - 36 - Output Capacitance VDS = 5.0 Vdc Coss - 17 - Transfer Capacitance VDG = 5.0 Vdc Crss - 6.5 - td(on) - 3.6 - tr - 9.7 - td(off) - 12 - tf - 1.7 - QT - 2.2 - nC IS - - -0.130 A ISM - - -0.520 VSD - - -2.2 SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = -15 Vdc, ID = -2.5 Adc, RL = 50 W Fall Time Gate Charge VDD = -40 Vdc, ID = -0.5 A, VGS = -10 V ns SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) VGS = 0 V, IS = -130 mA V 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.5 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 25C VDS = 10 V 0.5 - 55C 150C 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -3.5 V -3.25 V 0.4 0.35 0.3 -3.0 V 0.25 0.2 -2.75 V 0.15 -2.5 V 0.1 -2.25 V 0.05 0 4 TJ = 25C 0.45 0 Figure 1. Transfer Characteristics 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. On-Region Characteristics http://onsemi.com 2 9 10 BSS84LT1, SBSS84LT1 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 9 VGS = -4.5 V 8 150C 7 6 25C 5 4 -55C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 7 150C VGS = -10 V 6.5 6 5.5 5 4.5 4 25C 3.5 3 -55C 2.5 2 0 0.1 0.2 -ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -4.5 V ID = -0.13 A 1.2 1 0.8 -5 45 95 -6 -5 -4 ID = -0.5 A -3 -2 -1 0 145 VDS = -40 V TJ = 25C -7 500 0 1000 Figure 6. Gate Charge 1 TJ = 150C 25C -55C 0.01 0.001 0 0.5 1500 QT, TOTAL GATE CHARGE (pC) Figure 5. On-Resistance Variation with Temperature 0.1 0.6 -8 TJ, JUNCTION TEMPERATURE (C) ID, DRAIN CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = -10 V ID = -0.52 A 1.4 0.6 -55 0.5 -ID, DRAIN CURRENT (AMPS) 2 1.6 0.4 Figure 4. On-Resistance versus Drain Current Figure 3. On-Resistance versus Drain Current 1.8 0.3 1.0 1.5 2.0 2.5 -VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage http://onsemi.com 3 3.0 2000 BSS84LT1, SBSS84LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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