Document Number: 93525 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Aug-08 1
Schottky Rectifier, 8 A
8TQ...S Series
Vishay High Power Products
FEATURES
175 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Designed and qualified for Q101 level
DESCRIPTION
The 8TQ...S Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV) 8 A
VR80/100 V
D2PAK Anode
13
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 8 A
VRRM Range 80/100 V
IFSM tp = 5 µs sine 850 A
VF8 Apk, TJ = 125 °C 0.58 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 8TQ080S 8TQ100S UNITS
Maximum DC reverse voltage VR80 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
A
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
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2Revision: 19-Aug-08
8TQ...S Series
Vishay High Power Products Schottky Rectifier, 8 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
8 A TJ = 25 °C 0.72
V
16 A 0.88
8 A TJ = 125 °C 0.58
16 A 0.69
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.55 mA
TJ = 125 °C 7
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK 8TQ080S
8TQ100S
Document Number: 93525 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Aug-08 3
8TQ...S Series
Schottky Rectifier, 8 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
0.1
1
100
10
1000
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
0.60.4 0.8 1.2 1.81.60.2 1.0 1.4 2.0 2.2
0
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.001
0.0001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 40 80 100
60
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
4020 60 80 100 110
3010 50 70 900
TJ = 25 °C
0.1
1
10
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
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4Revision: 19-Aug-08
8TQ...S Series
Vishay High Power Products Schottky Rectifier, 8 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
150
155
140
145
160
165
170
180
175
Allowable Case Temperature (°C)
I
F
(
AV
)
- Average Forward Current (A)
4268
1210
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
1
3
6
5
4
2
7
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
24 126810
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
Document Number: 93525 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Aug-08 5
8TQ...S Series
Schottky Rectifier, 8 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Current rating (8 A)
2- Package:
3- Schottky “Q” series
4- Voltage ratings
5-
6- None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
T = TO-220
080 = 80 V
100 = 100 V
S = D
2
PAK
TRR = Tape and reel (right oriented)
7 None = Standard production
PbF = Lead (Pb)-free
Device code
51324
67
8 T Q 100 S TRL -
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
SPICE models http://www.vishay.com/doc?95291
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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therein, which apply to these products.
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