7MBR25SA140 - Fuji Electric - Datasheet.Support

7MBR25SA140 IGBT Modules

Applications

· Inverter for Motoe Drive

· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

I2t (Non-Repetitive)

Converter Brake Inverter

Operating junction temperature

Storage temperature

Isolation between terminal and copper base *2

voltage between thermistor and others *3

Mounting screw torque

VCES

VGES

IC

ICP

-IC

PC

VCES

VGES

IC

ICP

PC

VRRM

IO

IFSM

I2t

Tj

Tstg

Viso

Continuous Tc=25°C

Tc=75°C

1ms Tc=25°C

Tc=75°C

1 device

Continuous Tc=25°C

Tc=75°C

1ms Tc=25°C

Tc=75°C

1 device

50Hz/60Hz sine wave

Tj=150°C, 10ms

half sine wave

AC : 1 minute

1400

±20

35

25

70

50

25

180

1400

±20

25

15

50

30

110

1400

1600

25

260

338

+150

-40 to +125

AC 2500

3.5 *1

V

A

W

V

A

W

V

A

A2s

°C

V

N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)

*2 All terminals should be connected together when isolation test will be done.

*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24

should be connected together and shorted to copper base.

IGBT MODULE (S series)

1400V / 25A / PIM

Features

· Low VCE(sat)

· Compact Package

· P.C. Board Mount Module

· Converter Diode Bridge Dynamic Brake Circuit

保守移行機種

Not recommend for new design.

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Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off

Forward on voltage

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current

Resistance

B value

Converter Brake Inverter

ICES

IGES

VGE(th)

VCE(sat)

Cies

ton

tr

tr(i)

toff

tf

VF

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

VFM

IRRM

R

B

VCE=1400V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=25mA

VGE=15V, Ic=25A chip

terminal

VGE=0V, VCE=10V, f=1MHz

VCC=800V

IC=25A

VGE=±15V

RG=51Ω

IF=25A chip

terminal

IF=25A

VCES=1400V, VGE=0V

VCE=0V, VGE=±20V

IC=15A, VGE=15V chip

terminal

VCC=800V

IC=15A

VGE=±15V

RG=82 Ω

VR=1400V

IF=25A chip

terminal

VR=1600V

T=25°C

T=100°C

T=25/50°C

1.0

0.2

8.5

2.7

1.2

0.6

1.0

0.3

3.3

0.35

1.0

0.2

2.7

1.2

0.6

1.0

0.3

1.0

1.5

1.0

3000

5.5 7.2

mA

µA

V

pF

µs

V

µs

mA

µA

V

µs

mA

V

mA

Ω

K

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FWD

Brake IGBT

Converter Diode

With thermal compound

0.69

1.30

1.14 °C/W

0.90

0.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal resistance Characteristics

IGBT Module 7MBR25SA140

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

2.2

2.3

0.35

0.25

0.1

0.45

0.08

2.4

2.5

2.2

2.3

0.35

0.25

0.45

0.08

1.1

1.2

5000

465 495 520

3305 3375 3450

[Converter] 21(P)

23(N)

1(R) 2(S) 3(T)

[Brake] [Inverter]

22(P1)

7(B)

14(Gb)

24(N1)

20(Gu)

19(Eu)

13(Gx)

18(Gv)

17(Ev)

4(U)

12(Gy)

5(V) 6(W)

16(Gw)

11(Gz) 10(En)

15(Ew)

89

[Thermistor]

保守移行機種

Not recommend for new design.

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IGBT Module 7MBR25SA140

Characteristics (Representative)

012345

0

10

20

30

40

50

60

8V

10V

12V

15V

VGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 25°C (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

012345

0

10

20

30

40

50

60

8V

10V

12V

15V

VGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 125°C (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

012345

0

10

20

30

40

50

60

Tj= 25°C Tj= 125°C

[ Inverter ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10152025

0

2

4

6

8

10

Ic= 12.5A

Ic= 25A

Ic= 50A

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

100

1000

10000

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 50 100 150 200 250

0

200

400

600

800

1000

[ Inverter ]

Dynamic Gate charge (typ.)

Vcc=800V, Ic=25A, Tj= 25°C

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

保守移行機種

Not recommend for new design.

http://store.iiic.cc/

IGBT Module 7MBR25SA140

010203040

50

100

500

1000

ton

tr

toff

tf

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=800V, VGE=±15V, Rg=51 ohm, Tj= 25°C

Switching time : ton, tr, toff, tf [ nsec ]

Collector current : Ic [ A ]

010203040

50

100

500

1000

tf

tr

ton

toff

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=800V, VGE=±15V, Rg= 51 ohm, Tj= 125°C

Collector current : Ic [ A ]

Switching time : ton, tr, toff, tf [ nsec ]

10 50 100 500

50

100

500

1000

5000

toff

ton

tr

tf

[ Inverter ]

Switching time vs. Gate resistance (typ.)

Vcc=800V, Ic=25A, VGE=±15V, Tj= 25°C

Gate resistance : Rg [ohm]

Switching time : ton, tr, toff, tf [ nsec ]

0 1020304050

0

1

2

3

4

5

6

7

8

9

10

Err(25°C)

Eoff(25°C)

Eon(25°C)

Err(125°C)

Eoff(125°C)

Eon(125°C)

[ Inverter ]

Switching loss vs. Collector current (typ.)

Vcc=800V, VGE=±15V, Rg=51 ohm

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ]

10 50 100 500

0

5

10

15

20

[ Inverter ]

Switching loss vs. Gate resistance (typ.)

Vcc=800V, Ic=25A, VGE=±15V, Tj= 125°C

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Gate resistance : Rg [ohm]

Eon

Err

Eoff

0 200 400 600 800 1000 1200 1400 1600

0

10

20

30

40

50

60

[ Inverter ]

Reverse bias safe operating area

+VGE=15V, -VGE=<15V, Rg=>51 ohm, Tj=<125°C

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

保守移行機種

Not recommend for new design.

http://store.iiic.cc/

IGBT Module 7MBR25SA140

01234

0

10

20

30

40

50

60

Tj=25°C

Tj=125°C

[ Inverter ]

Forward current vs. Forward on voltage (typ.)

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

0 10203040

10

100

300

Irr(125°C)

Irr(25°C)

trr(25°C)

trr(125°C)

[ Inverter ]

Reverse recovery characteristics (typ.)

Vcc=800V, VGE=±15V, Rg=51ohm

Forward current : IF [ A ]

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

0.0 0.4 0.8 1.2 1.6 2.0

0

10

20

30

40

50

60

Tj= 25°C Tj= 125°C

[ Converter ]

Forward current vs. Forward on voltage (typ.)

Forward on voltage : VFM [ V ]

Forward current : IF [ A ]

0.001 0.01 0.1 1

0.01

0.1

1

5

IGBT[Brake]

Transient thermal resistance

Thermal resistanse : Rth(j-c) [ °C/W ]

Pulse width : Pw [ sec ]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.1

1

10

100

200

[ Thermistor ]

Temperature characteristic (typ.)

Temperature [°C]

Resistance : R [ k ohm ]

保守移行機種

Not recommend for new design.

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IGBT Module 7MBR25SA140

012345

0

5

10

15

20

25

30

35

8V

10V

12V15V

VGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 25°C (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

012345

0

5

10

15

20

25

30

35

8V

10V

12V

15V

VGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 125°C (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

012345

0

5

10

15

20

25

30

35

Tj= 25°C Tj= 125°C

[ Brake ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10152025

0

2

4

6

8

10

Ic= 7.5A

Ic= 15A

Ic= 30A

[ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

50

100

1000

5000

[ Brake ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 50 100 150

0

200

400

600

800

1000

[ Brake ]

Dynamic Gate charge (typ.)

Vcc=800V, Ic=15A, Tj= 25°C

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

保守移行機種

Not recommend for new design.

http://store.iiic.cc/

IGBT Module 7MBR25SA140

Outline Drawings, mm

mass : 180g

保守移行機種

Not recommend for new design.

http://store.iiic.cc/