7MBR25SA140 IGBT Modules IGBT MODULE (S series) 1400V / 25A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Brake t No -IC PC VCES VGES IC o c e r Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Rating 1400 20 35 25 70 50 25 180 1400 20 25 15 50 30 110 1400 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous Tc=25C Tc=75C Tc=25C Tc=75C nd e mm ICP Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter VCES VGES IC Condition 1ms 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25C Tc=75C Tc=25C Tc=75C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V N*m 7MBR25SA140 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.3 2.7 3000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Converter Turn-off time VCE=1400V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=25A VGE=15V RG=51 IF=25A chip terminal IF=25A VCES=1400V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal V CC =800V IC=15A VGE=15V RG=82 V R=1400V IF=25A chip terminal VR=1600V T=25C T=100C T=25/50C for ot Thermal resistance ( 1 device ) Contact thermal resistance N o c e r Rth(j-c) * Rth(c-f) V 3.3 0.35 1.0 0.2 Condition Min. 2.7 1.2 0.6 1.0 0.3 1.0 n. sig 465 3305 1.5 1.0 520 3450 Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 0.69 1.30 1.14 0.90 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Inverter] [Thermistor] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 17(Ev) 4(U) 13(Gx) 16(Gw) 15(Ew) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) http://store.iiic.cc/ pF s 1.0 0.3 1.1 1.2 5000 495 3375 w ne nd e mm Symbol 1.2 0.6 2.2 2.3 0.35 0.25 0.45 0.08 de Thermal resistance Characteristics Item 0.35 0.25 0.1 0.45 0.08 2.4 2.5 mA A V V 9 s mA A V s mA V mA K Unit C/W 7MBR25SA140 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 60 VGE= 20V15V 12V 50 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 VGE= 20V 15V 12V 50 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 40 10V 30 20 10 40 10V 30 20 10 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 60 10 Tj= 25C 5 Tj= 125C Collector - Emitter voltage : VCE [ V ] 40 8 20 e m m 4 Ic= 50A nd 10 0 0 1 2 o c e r 3 t 4 No Ic= 25A 2 Ic= 12.5A 0 5 5 10 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=25A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 10000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 30 . de 6 Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 150 Gate charge : Qg [ nC ] http://store.iiic.cc/ 200 0 250 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 50 7MBR25SA140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 51 ohm, Tj= 125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=51 ohm, Tj= 25C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 500 ton tr 100 tf tf 50 50 0 10 20 30 40 0 10 20 30 40 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=25A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=51 ohm 5000 10 Eon(125C) 500 ton tr tf 50 10 8 50 mm d en o c e r 100 6 5 4 3 t . n sig w ne Eoff(125C) Eoff(25C) Err(125C) 2 Err(25C) 1 0 500 0 10 20 Gate resistance : Rg [ohm] No Eon(25C) de 7 for toff 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=25A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>51 ohm, Tj=<125C 20 60 Eon 50 15 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 9 10 5 40 30 20 Eoff 10 Err 0 10 0 50 100 500 Gate resistance : Rg [ohm] 0 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1400 1600 IGBT Module 7MBR25SA140 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=51ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) 60 300 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 50 40 30 20 10 trr(125C) 100 trr(25C) Irr(125C) Irr(25C) 0 10 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 30 40 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 60 Tj= 25C Forward current : IF [ A ] 50 Tj= 125C de 40 30 ew n for 20 10 0 0.0 0.4 0.8 . n sig nd e mm o c e r 1.2 1.6 2.0 Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 FWD[Inverter] 1 IGBT[Brake] Conv. Diode IGBT[Inverter] 0.1 0.01 0.001 0.01 0.1 1 Resistance : R [ k ohm ] Thermal resistanse : Rth(j-c) [ C/W ] 100 10 1 0.1 -60 -40 -20 Pulse width : Pw [ sec ] 0 20 40 60 80 100 120 140 160 180 Temperature [C] http://store.iiic.cc/ 7MBR25SA140 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 35 35 VGE= 20V15V 12V 30 25 Collector current : Ic [ A ] 25 10V 20 15 10 10V 20 15 10 5 5 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 10 Tj= 125C Collector - Emitter voltage : VCE [ V ] Tj= 25C 30 25 Collector current : Ic [ A ] 2 Collector - Emitter voltage : VCE [ V ] 35 20 8 10 0 0 1 2 mm o c e r 3 4 d en 4 n sig t Ic= 30A Ic= 15A 2 Ic= 7.5A 0 5 5 Collector - Emitter voltage : VCE [ V ] No . de 6 ew n for 15 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=15A, Tj= 25C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 1 Collector - Emitter voltage : VCE [ V ] Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] VGE= 20V15V 12V 30 IGBT Module 7MBR25SA140 Outline Drawings, mm mass : 180g de ew n for nd e mm t No o c e r http://store.iiic.cc/ . n sig