BZX84C16LT3 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

September, 2001 – Rev. 2 1Publication Order Number:

BZX84C2V4LT1/D

BZX84C2V4LT1 Series

Zener Voltage Regulators

225 mW SOT–23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT–23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Specification Features:

•225 mW Rating on FR–4 or FR–5 Board

•Zener Breakdown Voltage Range – 2.4 V to 75 V

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (>16 KV) per Human Body Model

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL94 V–0

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR–5 Board,

(Note 1) @ TA = 25°C

Derated above 25°C

PD225

1.8 mW

mW/°C

Thermal Resistance – Junction to Ambient RJA 556 °C/W

Total Power Dissipation on Alumina

Substrate, (Note 2) @ TA = 25°C

Derated above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance – Junction to Ambient RJA 417 °C/W

Junction and Storage

Temperature Range TJ, Tstg –65 to

+150 °C

1. FR–5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina

Device Package Shipping

ORDERING INFORMATION

SOT–23

CASE 318

STYLE 8

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Cathode 1

Anode

BZX84CxxxLT1 SOT–23 3000/Tape & Reel

MARKING DIAGRAM

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

DEVICE MARKING INFORMATION

xxx = Specific Device Code

M = Date Code

xxx

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

BZX84CxxxLT3 SOT–23 10,000/Tape & Reel

Devices listed in

bold, italic

are ON Semiconductor

Preferred devices. Preferred devices are recommended

choices for future use and best overall value.

Zener Voltage Regulator

IZT

VZVF

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ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C

unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

VZMaximum Temperature Coefficient of VZ

CMax. Capacitance @ VR = 0 and f = 1 MHz

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ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

VZ1 (Volts)

ZT1 =5mA

(Note 3) ZZT1

(Ohms)

VZ2 (Volts)

ZT2 =1mA

(Note 3) ZZT2

(Ohms)

VZ3 (Volts)

ZT3 =20mA

(Note 3) ZZT3

(Ohms)

Max Reverse

Leakage

Current

VZ

(mV/k)

@ IZT1 = 5 mA

C (pF)

Device Device

Marking Min Nom Max

(Ohms)

@ IZT1 =

5 mA Min Max

(Ohms)

@ IZT2 =

1 mA Min Max

(Ohms)

@ IZT3 =

20 mA VR

Volts

A@Min Max

C (pF)

@ VR = 0

f = 1 MHz

BZX84C2V4LT1 Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 –3.5 0 450

BZX84C2V7LT1 Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 –3.5 0 450

BZX84C3V0LT1 Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 –3.5 0 450

BZX84C3V3LT1 Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 –3.5 0 450

BZX84C3V6LT1 Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 –3.5 0 450

BZX84C3V9LT1 Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 –3.5 –2.5 450

BZX84C4V3LT1 W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 –3.5 0 450

BZX84C4V7LT1 Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 –3.5 0.2 260

BZX84C5V1LT1 Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 –2.7 1.2 225

BZX84C5V6LT1 Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 –2.0 2.5 200

BZX84C6V2LT1 Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185

BZX84C6V8LT1 Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155

BZX84C7V5LT1 Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140

BZX84C8V2LT1 Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135

BZX84C9V1LT1 Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1 Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130

BZX84C11LT1 Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130

BZX84C12LT1 Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130

BZX84C13LT1 Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120

BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110

BZX84C16LT1 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105

BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100

BZX84C20LT1 Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85

BZX84C22LT1 Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85

BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

VZ1 Below

ZT1 =2mA ZZT1

Below

VZ2 Below

ZT2 = 0.1 mA ZZT2

Below

VZ3 Below

ZT3 =10mA ZZT3

Below

Max Reverse

Leakage

Current

VZ

(mV/k) Below

@ IZT1 = 2 mA

C (pF)

Device Device

Marking Min Nom Max

Below

@ IZT1 =

2 mA Min Max

Below

@ IZT4 =

0.5 mA Min Max

Below

@ IZT3 =

10 mA VR

Volts

A@Min Max

C (pF)

@ VR = 0

f = 1 MHz

BZX84C27LT1 Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30LT1 Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33LT1 Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36LT1 Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39LT1 Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1 Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47LT1 Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40

BZX84C51LT1 Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56LT1 Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62LT1 Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1 Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75LT1 Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C

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TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

-3

-2

-1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range –55°C to +150°C)

TYPICAL TC VALUES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C)

VZ @ IZT

100

VZ, NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 25°C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C 25°C 0°C

TYPICAL TC VALUES

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TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

TA = 25°C

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

TA = 25°C

IR, LEAKAGE CURRENT ( A)µ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150°C

+25°C

-55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

(VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

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PACKAGE DIMENSIONS

SOT–23

TO–236AB

CASE 318–09

ISSUE AH

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0385 0.0498 0.99 1.26

D0.0140 0.0200 0.36 0.50

G0.0670 0.0826 1.70 2.10

H0.0040 0.0098 0.10 0.25

J0.0034 0.0070 0.085 0.177

K0.0180 0.0236 0.45 0.60

L0.0350 0.0401 0.89 1.02

S0.0830 0.0984 2.10 2.50

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318-01, -02, AND -06 OBSOLETE, NEW

STANDARD 318-09.

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Notes

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BZX84C2V4LT1/D

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