© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 6 1Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter VoltageMMBT2222LT1
MMBT2222ALT1
VCEO 30
40
Vdc
CollectorBase Voltage MMBT2222LT1
MMBT2222ALT1
VCBO 60
75
Vdc
EmitterBase Voltage MMBT2222LT1
MMBT2222ALT1
VEBO 5.0
6.0
Vdc
Collector Current − Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Res istance, Junc t i on−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Res istance, Junc t i on−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
xxx = 1P or M1B
M = Date Code*
G= Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
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(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
2
1
3
xxx M G
G
MMBT2222LT1, MMBT2222ALT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222
MMBT2222A V(BR)CEO 30
40
Vdc
CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222
MMBT2222A V(BR)CBO 60
75
Vdc
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222
MMBT2222A V(BR)EBO 5.0
6.0
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX 10 nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222
(VCB = 60 Vdc, IE = 0) MMBT2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222
(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A
ICBO
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO 100 nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 3) MMBT2222
MMBT2222A
hFE 35
50
75
35
100
50
30
40
300
CollectorEmitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc) MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) MMBT2222
MMBT2222A
VCE(sat)
0.4
0.3
1.6
1.0
Vdc
BaseEmitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc) MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) MMBT2222
MMBT2222A
VBE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Note 4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222
MMBT2222A
fT250
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222
MMBT2222A
Cibo
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hie 2.0
0.25 8.0
1.25
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hre
8.0
4.0
X 10−4
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hfe 50
75 300
375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hoe 5.0
25 35
200
mmhos
MMBT2222LT1, MMBT2222ALT1
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic UnitMaxMinSymbol
SMALL−SIGNAL CHARACTERISTICS
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A rb, Cc 150 ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A NF 4.0 dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) td 10 ns
Rise Time tr 25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) ts 225 ns
Fall Time tf 60
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
−2 V < 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
CS* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
−55°C
VCE = 1.0 V
VCE = 10 V
MMBT2222LT1, MMBT2222ALT1
http://onsemi.com
4
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 25°C
IC = 1.0 mA 10 mA 150 mA 500 mA
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts = ts − 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 500.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
MMBT2222LT1, MMBT2222ALT1
http://onsemi.com
5
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current−Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
−0.5
0
+0.5
COEFFICIENT (mV/ C)
−1.0
−1.5
−2.5
°
RqVC for VCE(sat)
RqVB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
−2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
ORDERING INFORMATION
Device Specific Marking Code Package Shipping
MMBT2222LT1 M1B SOT−23 3000 / Tape & Reel
MMBT2222LT1G M1B SOT−23
(Pb−Free) 3000 / Tape & Reel
MMBT2222ALT1 1P SOT−23 3000 / Tape & Reel
MMBT2222ALT1G 1P SOT−23
(Pb−Free) 3000 / Tape & Reel
MMBT2222LT3 M1B SOT−23 10,000 / Tape & Reel
MMBT2222LT3G M1B SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBT2222ALT3 1P SOT−23 10,000 / Tape & Reel
MMBT2222ALT3G 1P SOT−23
(Pb−Free) 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBT2222LT1, MMBT2222ALT1
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.029
c
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT2222LT1/D
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