ag) ope Beae4uny2 ooosnay 2 BS @e@e@e@ e@ 6 O6hUH UO IRF430/431/432/433 FEATURES Fast switching times Low input capacitance PRODUCT SUMMARY | Low. Rosion) at high voltage Improved inductive ruggedness Excellent high voltage stability LEGCTIALE COALTOOAIMIIOTN Rugged polysilicon gate cell structure Extended safe operating area improved high temperature reliability TO-3 package (High voltage) Part Number - Vps Rosjon) _ IRF330 500V 1.52 4.5A (RF331 450V 1.52 4.5A IRF332 500V 2.02 4.0A IRF333 450V 2.028 4.0A MAXIMUM RATINGS 98D 05134 DT39-4/ - N-CHANNEL POWER MOSFETS TO-3 Characteristic tRF430 IRF43t IRF432 IRF433 * Unit Drain-Source Voltage (1) 500 450 500 450 Vde Drain-Gate Voltage (Ras=1.0M2Q) (1) 500 450 500 450 Vde Gate-Source Voltage Vde Continuous Drain Current To =25C 45 "4.5 4.0 4.0 Adc Continuous Drain Current Tc= 100C 3.0 . 3.0 2.5 2.5 Adc Drain CurrentPulsed (3) 18 18 16 16 Adc Gate CurrentPulsed 1.5 Adc Total Power Dissipation @ Tc=25C Derate above 25C 75 0.6 Watts W/C Operating and Storage Junction Temperature Range Ty, Tstg 55 to 150 C, Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds TL 300 C Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. Junction temperature GE samsuna SEMICONDUCTOR 133 7 ee oe 5 } } t mT 5 ._%964142 SAMSUNG SEMICONDUCTOR INC 98D 05135 DT-B4-.. poe be Prseu ne go05135 4 Pees N-CHANNEL*- ~- IRF430/431/432/433 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) . Characteristic . |Symbol! Type |Min|Typ| Max |Units| _ Test Conditions _ : . . |IR : . bes 600] | | V |Ves=0Vv - _|Drain-Source Breakdown . | BVpgs Vonage - IRF4311 450 V_ |lp=250 IRF433 7 D=250pA Gate Threshold Voltage Vestn | ALL | 2.0; | 4.0 Vo JVos=Ves, lIpb>=250nA Gate-Source Leakage Forward! lass ALL | | | 100] nA |Ves=20V Gate-Source Leakage Reverse] lass ALL | | |-100| nA |Vas=20V Zero Gate Voltage loss ALL | | 250] pA |Vps=Max. Rating, Ves=0V . Drain Current | | 1000] pA |Vps=Max. RatingX0.8, Vas=OV, To=125C IRF430 48 A On-State Drain-Source IRF431; | | m . lo(on) Vps>lpjon)XRosion) max.. Vas= 10V Current (2). IRF432 inF433j"}| | A IRF430 oe iaraai| [0-95 1:5 | 2 Static Drain-Source On-State- Rosion) Vos=10V, Ip=2.5A Resistance (2) IRF432 1.4 Q inF4a3| | 1%} 2- Forward Transconductance (2)| - gis ALL |2.5)/3.2/ UB | Ves>loion) Rosen) max., Ib=2.5A Input Capacitance + Ciss ALL | |720] 800 | pF Output Capacitance Coss ALL |110] 200 | pF |Vas=OV, Vps=25V, f=1.0MHz Reverse Transfer Capacitance} Cres ALL | | 50} 60 | pF Turn-On Delay Time tagon) | ALL | }| | 30 | ns Rise Time t | atc ||| 30 | ns |Yoo=0-58Voss, lb=2.5A, Zo=15 2 (MOSFET switching times are essentially Turn-Off Delay Time tao) | ALL | | | 55 | MS _ independent of operating temperature.) Fall Time tr ALL {| | | 30 ns Total Gate Charge : ; (Gate-Source Plus Gate-Drain) Qg | ALL | | 22] 30 | RC ivgs=10V, Ip=6.0A, Vos=0.8 Max. Rating - (Gate charge is essentially independent of Gate-Source Charge Qos ALL | | 4.2) | nc operating temperature.) Gate-Drain ("Miller") Charge | Qga | ALL | [17.8) | nc THERMAL RESISTANCE Junction-to-Case Rie ALL | | 1.67 | KW Case-to-Sink Rincs ALL | 10.1] | KAW |Mounting surface flat, smooth, and greased Junction-to-Ambient - Rina ALL | | ] 30 | K/W |Free Air Operation Notes: (1) Ty=25C to 160C (2) Pulse test: Pulse width<30Qus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR . 134 ~ IRFAS0/4311932/433 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS F -- <"964142 SAMSUNG SEMICONDUCTOR NC 98D 05136 DT-BAt( Bo TB ODER ?9b442 goosiab L N-CHANNEL ~ uy POWER MOSFETS Characteristic Symbo!} Type |Min| Typ; Max [Units Test Conditions . IRF430] _ | ot ae | 4 Continuous Source Current Is IRF431 : Body Diod (Body Diode) eFa4eg| | ~ | 4.0 | A [Modified MOSFET symbot D showing the integral 6 IRF430; jj reverse P-N junction rectifier S$ 18 A Pulse Source Current ism IRF431 (Body Diode) (3) IRF432| |_| ag | a IRF433 . ; nedes| | | 1-4 | [To=28C, Is=4.5A, Vas=OV Diode Forward Voltage (2) Vsp nedeg| ~ | 11-3 | V |1c#28C,ts=4.0A, Vas=0V Reverse Recovery Time tr ALL | |}800; ns | Ty=150C, Ir=4.5A, dip/dt=100A/us Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature g weg = = e G 3 az 2 oO Zo 5 Ss 1 o Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics f 2. f 3 Z a s 0 2 4 6 8 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typicat Saturation Characteristics 5 Ip, DRAIN CURRENT (AMPERES) Ig, DRAIN CURRENT (AMPERES) o1 10 20 50 10 y=25ec. Ty= 125C 1 2 5-3 4 5 6 7. Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics T,= 150C Rac 1.67 KAY 20. 50 100 600 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area ce SAMSUNG SEMICONDUCTOR 135 Lolgg DEB rabua4e o005137 6 IRF430/431/432/433 ; 796414> cAMetiNea SEMTCANNI CC ING _ 980. 95137 OT B4ell N-CHANNEL - ZenactMRinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 10 5 10 2 5 2 5 gla, TRANSCONDUCTANCE (SIEMENS) 1 4 8 Ip, DRAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current ~ o 0.85 BVoss, DRAIN-TO-SOURCE, BREAKDOWN VOLTAGE (NORMALIZED) 40 80 7 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature -40 10 tt Thermal Imped: Ibn, REVERSE DRAIN CURRENT (AMPERES) Rosin}, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) .. POWER MOSFETS td 4. Duty Factor. Date Per Unit Bese=Rp c= 1.67 Dag. Tar TePou Zn 1 2 5 107 2 8 1 10 tt. SQUARE WAVE PULSE DURATION (SECONDS) Maxi Effective Transi to-Case Vs. Pulse Duration Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage 2.5 2.0 0.5 +0 -40 0 60 120 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature 40 160 G8E samsunc semiconpuctor 136 aE ae ~ ASA142. SAMSUNG SEMTRONIIIOTA :48 PIBYLDYe O0O05134 Oo 1RF430/431/4321433 C, CAPACITANCE {oF} o 10 20 30 40 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Rosjon)) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 5 10 15 20 25 tp, DRAIN CURRENT (AMPERES) Typical Or-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) 100 #6120 6140 20 40 60 T, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 380 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS). Ip, DRAIN CURRENT (AMPERES) 98D 8D 05138 _ - N-CHANNEL ~ POWER MOSFETS Es ee ae 15 Q Qg, TOTAL GATE CHARGE (nc) Typical Gate Charge Vs. Gate-To-Source Voltaga Tc, CASE TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature _DT 34-1: cee SAMSUNG SEMICONDUCTOR 137