BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-11 1Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototriac Output, Non-Zero Crossing
DESCRIPTION
The BRT11, BRT12, and BRT13 product family consists of
AC optocouplers non-zero voltage detectors consisting of
two electrically insulated lateral power ICs which integrate a
thyristor system, a photo detector and noise suppression at
the output and an IR GaAs diode input.
FEATURES
•I
TRMS = 300 mA
High static dV/dt < 10 000 V/μs
Electrically insulated between input and output
circuit
Microcomputer compatible - very low trigger
current
Trigger current
- (IFT < 1.2 mA) BRT12F
- (IFT < 2 mA) BRT11H, BRT12H, BRT13H
- (IFT < 3 mA) BRT11M, BRT12M, BRT13M
Non-zero voltage detectors high input sensitivity
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Industrial controls
Office equipment
Consumer appliances
AGENCY APPROVALS
UL 1577, file no. E52744 system code H
DIN EN 60747-5-2 (VDE 0844)/DIN EN 60747-5-5
(pending) available with option 1
•CQC
Note
(1) Also available in tube, do not put T on the end.
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
i179004-10
ORDERING INFORMATION
BRT1#x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY
CERTIFIED/PACKAGE
VDRM (V)
400 600 800
UL IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA
DIP-6 BRT11H BRT11M BRT12F BRT12H BRT12M BRT13H BRT13M
DIP-6, 400 mil, option 6 - - BRT12F-X006 BRT12H-X006 - BRT13H-X006 -
SMD-6, option 7 - - BRT12F-X007T (1) BRT12H-X007T (1) - BRT13H-X007T (1) -
SMD-6, option 9 - - - BRT12H-X009T - BRT13H-X009T -
UL, VDE IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA
DIP-6 - - - BRT12H-X001 BRT12M-X001 - -
DIP-6, option 6 - - BRT12F-X016 BRT12H-X016 BRT12M-X016 BRT13H-X016 -
SMD-6, option 7 - - - - - BRT13H-X017T (1) -
7.62 mm
DIP-6
10.16 mm
Option 6
> 0.1 mm
Option 9
> 0.7 mm
Option 7
BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-11 2Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Test AC voltage in accordance with DIN 57883, June 1980.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF20 mA
Surge forward current IFSM 1.5 A
Power dissipation t 10 μs Pdiss 30 mW
OUTPUT
Repetitive peak off-state voltage
BRT11 VDRM 400 V
BRT12 VDRM 600 V
BRT13 VDRM 800 V
RMS on-state current ITRMS 300 mA
Single cycle surge current 50 Hz ITSM 3A
Power dissipation Pdiss 600 mW
COUPLER
Maximum power dissipation Ptot 630 mW
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74) (1)
VISO 5300 VRMS
Reference voltage in accordance
with VDE 0110 b Vref 500 VRMS
Reference voltage in accordance
with VDE 0110 b (insulation group C) Vref 600 VDC
Creepage distance 7.2 mm
Clearance distance 7.2 mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1
group IIIa according to
DIN VDE 0109 CTI 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature range Tstg - 40 to + 150 °C
Ambient temperature range Tamb - 40 to + 100 °C
BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-11 3Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Static air, SITAC soldered in PCB or base plate.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Trigger Delay Time Fig. 2 - Power Dissipation 60 Hz to 60 Hz Line Operation
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.1 1.35 V
Reverse current VR = 6 V IR10 μA
Thermal resistance,
junction to ambient (1) RthJA 750 °C/W
OUTPUT
Peak off-state voltage ID(RMS) = 100 μA
BRT11
VDM
400 μA
BRT12 600 μA
BRT13 800 μA
Off-state current TC = 80 °C, VDRM ID0.5 100 μA
On-state voltage IT = 300 mA VT2.3 V
Pulse current tp 5 μs, f = 100 Hz,
dItp/dt 8 A/μs Itp 2A
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 kV/μs
VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5kV/μs
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM, Tj = 25 °C,
dI/dtcrq 15 A/ms dV/dtcrq 10 kV/μs
VD = 0.67 VDRM, Tj = 80 °C,
dI/dtcrq 15 A/ms dV/dtcrq 5kV/μs
Critical rate of rise of on-state at
current dI/dtcr 8A/μs
Holding current VD = 10 V IH80 500 μA
Thermal resistance, junction to
ambient RthJA 125 °C/W
COUPLER
Trigger current
VD = 10 V, F - versions IFT 1.2 mA
VD = 10 V, H - versions IFT 0.4 2 mA
VD = 10 V, M - versions IFT 0.8 3 mA
Trigger current temperature
gradient ΔIFT/ΔTj714μA/°C
Capacitance (input to output) f = 1 MHz, VR = 0 V CIO 2pF
t
gd
= f(IF/IFT25 °C)
V
D = 200 V
100 5 101 102
5
100
5
101
5
102
103
IF/IFT25°C
17239
tgd
TJ = 25°C
100°C
17240
P
tot = (ITRMS
)
0 100 200 mA 300
/TRMS
0.2
0.3
0.1
0.0
0.4
0.5
W
0.6
Ptot
180°
120°
90°
60°
30°
BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-11 4Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Off-State Current
Fig. 4 - Pulse Trigger Current
Fig. 5 - Typical Input Characteristics
Fig. 6 - Typical Output Characteristics
Fig. 7 - Current Reduction
Fig. 8 - Current Reduction
0
T
J
17241
I
D
= f(T
j
)
V
D
= 800 V
20 40 60 80 °C 100
10
- 1
10
- 0
5
10
- 1
10
- 2
10
- 3
nA
5
5
I
D
17242
IFTN=f(tpIF)
IFTN normalized to IFT refering
to tpIF 1m
Vop=220V,f= 4 0 ...60Hz typ.
17243
I
F = ƒ ( V
F
)
VF
0.9
= 75 °C
10 - 1
10 - 0
5
10 - 1
10 - 2
mA
5
IF
1.0 1.1 1.2
V
Tj
25 °C
50 °C
17244
IT=ƒ(VT)
VT
0
10 - 1
10 - 0
5
10 - 3
10 - 2
mA
5
IT
Tj= 25 °C
100 °C
123V4
17245
I
TRMS = ƒ ( T
A)
R
thJA = 125 K/W 3)
0 20 40 60 80 °C 100
0
100
200
300
mA
400
TA
ITRMS
17246
ITRMS = ƒ(TPIN5)
RthJ-PIN5= 16,5 K/W 4)
BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-11 5Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example)
Notes
Only options 1, and 7 are reflected in the package marking.
The VDE logo is only marked on option 1 parts.
Tape and reel suffix (T) is not part of the package marking.
20802-40
Option 6 Option 7 Option 8 Option 9
10.16 typ.
7.62 typ.
8 min.
7.62 typ.
4.3 ± 0.3
0.6 min.
10.3 max.
0.7 min.
7.62 typ.
12.1 max.
9.27 min.
10.3 max.
7.62 typ.
8 min.0.6 min.
0.1 ± 0.1 3.6 ± 0.3
3.5 ± 0.3
2.55 ± 0.25
0.1 min.
0.25 ± 0.1
3.5 ± 0.3
0.765 ± 0.255
7.62 ref.
9.78 ± 0.25
0.30 typ.
0.1755 ± 0.0735
15° max.
6.4 ± 0.1
8.6 ± 0.1
pin one ID
6
5
4
12
3
ISO method A
3.555 ± 0.255
0.84 typ.
2.54 typ.
1 min.
0.485 ± 0.025
1.27 ± 0.05
4° typ.
17222
0.84 typ.
BRT12H
V YWW H 68
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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