MJ15003 - ON Semiconductor - Datasheet.Support

Complementary Silicon Power

Transistors

The MJ15003 and MJ15004 are PowerBase power transistors

designed for high power audio, disk head positioners and other linear

applications.

•High Safe Operating Area (100% Tested) —

250 W @ 50 V

•For Low Distortion Complementary Designs

•High DC Current Gain —

hFE = 25 (Min) @ IC = 5 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎ

ÎÎÎÎÎÎ

250

1.43

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.70

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes:

1/16″ from Case for  10 seconds

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

265

ÎÎÎ

C

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9 1Publication Order Number:

MJ15003/D

MJ15003

MJ15004

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

140 VOLTS

250 WATTS

NPN

PNP

CASE 1–07

TO–204AA

(TO–3)

*ON Semiconductor Preferred Device

MJ15003 MJ15004

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

140

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEO

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

250

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Baised

(VCE = 50 Vdc, t = 1 s (non repetitive))

(VCE = 100 Vdc, t = 1 s (non repetitive))

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IS/b

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5 Adc, VCE = 2 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter On Voltage

(IC = 5 Adc, VCE = 2 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

cob

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1000

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2%.

IC, COLLECTOR CURRENT (AMP)

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5 7 10 200

2 3 50 70 10020 30

0.5

0.2

0.7

0.3

TC = 25°C

150

TJ = 200°C

BONDING WIRE LIMITED

THERMAL LIMITATION (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

MJ15003 MJ15004

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T– SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

MJ15003 MJ15004

http://onsemi.com

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MJ15003/D

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